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Fairchild/ON Semiconductor |
MOSFET P-CH 250V 9.4A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 4.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock11,268 |
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MOSFET (Metal Oxide) | 250V | 9.4A (Tc) | 10V | 5V @ 250µA | 38nC @ 10V | 1180pF @ 25V | ±30V | - | 3.13W (Ta), 120W (Tc) | 620 mOhm @ 4.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Microsemi Corporation |
MOSFET N-CH 500V TO-205AF TO-39
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-39
- Package / Case: TO-205AD, TO-39-3 Metal Can
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Package: TO-205AD, TO-39-3 Metal Can |
Stock5,376 |
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MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 4.46nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Fairchild/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,592 |
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MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | ±30V | - | 2.5W (Ta), 44W (Tc) | 530 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 3.2A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
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Package: 6-VDFN Exposed Pad |
Stock3,520 |
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MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 30V 2.9A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock262,068 |
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MOSFET (Metal Oxide) | 30V | 2.9A (Ta), 4A (Tc) | 4.5V, 10V | 1V @ 250µA | 10.2nC @ 10V | 330pF @ 25V | ±20V | - | 2W (Ta) | 150 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 1.9A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock18,264 |
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MOSFET (Metal Oxide) | 55V | 1.9A (Ta) | 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | ±20V | - | 1W (Ta) | 160 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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IXYS |
MOSFET N-CH 600V 82A PLUS 264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock2,672 |
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MOSFET (Metal Oxide) | 600V | 82A (Tc) | 10V | 5V @ 8mA | 240nC @ 10V | 23000pF @ 25V | ±30V | - | 1250W (Tc) | 75 mOhm @ 41A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 50A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,888 |
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MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 4V @ 250µA | 165nC @ 10V | 4400pF @ 25V | ±30V | - | 400W (Tc) | 65 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Diodes Incorporated |
MOSFET NCH 150V 8.3A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 32W (Ta)
- Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,088 |
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MOSFET (Metal Oxide) | 150V | 8.3A (Tc) | 4V, 10V | 3V @ 250µA | 8.7nC @ 10V | 405pF @ 25V | ±20V | - | 32W (Ta) | 310 mOhm @ 1.5A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 20V 5.4A 4WLCSP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 400mW
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (2x2)
- Package / Case: 4-XFBGA, WLCSP
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Package: 4-XFBGA, WLCSP |
Stock2,144 |
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MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | - | 6.2nC @ 4.5V | - | - | - | 400mW | - | 150°C (TJ) | Surface Mount | 4-WLCSP (2x2) | 4-XFBGA, WLCSP |
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Diodes Incorporated |
MOSFET 60V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 3.65 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,120 |
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MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 250µA | 95.4nC @ 10V | 4556pF @ 30V | ±20V | - | 2.8W (Ta), 136W (Tc) | 3.65 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 898pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock5,344 |
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MOSFET (Metal Oxide) | 80V | 15A (Tc) | 5V, 10V | 2.1V @ 1mA | 7.9nC @ 5V | 898pF @ 25V | ±10V | - | 45W (Tc) | 72 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 12.9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 6.45A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,088 |
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MOSFET (Metal Oxide) | 80V | 12.9A (Tc) | 5V, 10V | 2V @ 250µA | 11.5nC @ 5V | 520pF @ 25V | ±20V | - | 2.5W (Ta), 40W (Tc) | 100 mOhm @ 6.45A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock396,936 |
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MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | ±20V | - | 230W (Tc) | 9 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock12,582 |
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MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | ±25V | - | 25W (Tc) | 99 mOhm @ 16A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock48,012 |
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MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | - | 380W (Tc) | 2.4 mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock12,132 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2V @ 45µA | 78nC @ 10V | 6300pF @ 20V | ±20V | - | 94W (Tc) | 3.6 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Cree/Wolfspeed |
MOSFET N-CH 1700V 5.3A TO247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7 (Straight Leads)
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Package: TO-263-7 (Straight Leads) |
Stock22,206 |
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SiCFET (Silicon Carbide) | 1700V | 5.3A (Tc) | 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | 200pF @ 1000V | +25V, -10V | - | 78W (Tc) | 1.4 Ohm @ 2A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7 (Straight Leads) |
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STMicroelectronics |
MOSFET N-CH 800V 3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock204,960 |
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MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.5V @ 50µA | 22.5nC @ 10V | 575pF @ 25V | ±30V | - | 80W (Tc) | 3.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 3.6A (Tc) | 10V | 4V @ 250µA | 10 nC @ 10 V | 335 pF @ 25 V | ±30V | - | 3.8W (Ta), 32W (Tc) | 1.2Ohm @ 1.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Goford Semiconductor |
MOSFET P-CH 80V 89A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock108 |
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MOSFET (Metal Oxide) | 40 V | 89A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 62 nC @ 10 V | 6040 pF @ 40 V | ±20V | - | 245W (Tc) | 17mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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onsemi |
NTEFS2MS31 - NCH 12V 2.3A WLCSP
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V
- Vgs (Max): +20V, -5V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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Package: - |
Stock900 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 21A (Tc) | 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | 652 pF @ 1000 V | +20V, -5V | - | 156W (Tc) | 150mOhm @ 13.3A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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YAGEO XSEMI |
MOSFET N-CH 30V 20A 63.5A PMPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 63.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.12W (Ta)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PMPAK® 3 x 3
- Package / Case: 8-PowerDFN
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 30 V | 20A (Ta), 63.5A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 64 nC @ 10 V | 2800 pF @ 15 V | ±20V | - | 3.12W (Ta) | 5mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 3 x 3 | 8-PowerDFN |
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Infineon Technologies |
MOSFET N-CH 120V 56A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock7,638 |
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MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 4V @ 61µA | 49 nC @ 10 V | 3220 pF @ 60 V | ±20V | - | 107W (Tc) | 14.4mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Microchip Technology |
SICFET N-CH 1200V 64A TO268
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.6V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 303W
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock126 |
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SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 2.6V @ 2mA | 137 nC @ 20 V | 1990 pF @ 1000 V | +23V, -10V | - | 303W | 50mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta)
- Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 2.3A (Ta) | 3.3V, 10V | 1.8V @ 250µA | 5.5 nC @ 10 V | 233 pF @ 15 V | ±20V | - | 770mW (Ta) | 59mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
AUTOMOTIVE PCH -12V -7A SMALL SI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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Package: - |
Stock8,790 |
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MOSFET (Metal Oxide) | 12 V | 7A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 58 nC @ 4.5 V | 7400 pF @ 6 V | ±10V | - | 1.1W (Ta) | 12mOhm @ 7A, 4.5V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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