Page 971 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFH4210TRPBF
Infineon Technologies

MOSFET N-CH 25V 45A 8PQFN

Package: 8-PowerTDFN

Stock6,976
IPD60R2K0C6BTMA1
Infineon Technologies

MOSFET N-CH 600V 2.4A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,896
SPN01N60C3
Infineon Technologies

MOSFET N-CH 650V 0.3A SOT-223

Package: TO-261-4, TO-261AA

Stock909,816
TPC8A05-H(TE12L,QM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 10A 8SOP

Package: 8-SOIC (0.173", 4.40mm Width)

Stock6,752
NTD4854NT4G
ON Semiconductor

MOSFET N-CH 25V 15.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock215,736
FQB2N50TM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 2.1A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,944
STF30NM50N
STMicroelectronics

MOSFET N-CH 500V 27A TO-220FP

Package: TO-220-3 Full Pack

Stock417,300
STD6NM60N
STMicroelectronics

MOSFET N-CH 600V 4.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,252,200
AUIRFP4568
Infineon Technologies

MOSFET N-CH 150V 171A AUTO

Package: TO-247-3

Stock2,864
IRLR8103VTRPBF
Infineon Technologies

MOSFET N-CH 30V 91A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock34,800
RJK5015DPM-00#T1
Renesas Electronics America

MOSFET N-CH 500V 25A TO3PFM

Package: TO-3PFM, SC-93-3

Stock5,632
CSD18535KTT
Texas Instruments

MOSFET N-CH 60V 200A

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock103,464
IXTP5N50P
IXYS

MOSFET N-CH 500V 4.8A TO-220

Package: TO-220-3

Stock3,824
RJK0855DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 30A LFPAK

Package: SC-100, SOT-669

Stock7,848
BUK7613-60E,118
Nexperia USA Inc.

MOSFET N-CH 60V 58A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,320
R6015ENX
Rohm Semiconductor

MOSFET N-CH 600V 15A TO220

Package: TO-220-2 Full Pack

Stock10,260
IRFR9110PBF
Vishay Siliconix

MOSFET P-CH 100V 3.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,968
IRF6727MTRPBF
Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

Package: DirectFET? Isometric MX

Stock42,960
STD45P4LLF6AG
STMicroelectronics

MOSFET P-CH 40V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,872
SI7655DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 40A PPAK 1212

Package: PowerPAK? 1212-8

Stock10,584

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH4210TRPBF	Infineon Technologies	MOSFET N-CH 25V 45A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4812pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,976	MOSFET (Metal Oxide)	25V	45A (Ta)	4.5V, 10V	2.1V @ 100µA	74nC @ 10V	4812pF @ 13V	±20V	-	3.6W (Ta), 104W (Tc)	1.35 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
IPD60R2K0C6BTMA1	Infineon Technologies	MOSFET N-CH 600V 2.4A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22.3W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,896	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	3.5V @ 60µA	6.7nC @ 10V	140pF @ 100V	±20V	-	22.3W (Tc)	2 Ohm @ 760mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SPN01N60C3	Infineon Technologies	MOSFET N-CH 650V 0.3A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock909,816	MOSFET (Metal Oxide)	650V	300mA (Ta)	10V	3.7V @ 250µA	5nC @ 10V	100pF @ 25V	±20V	-	1.8W (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
TPC8A05-H(TE12L,QM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 10A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock6,752	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.3V @ 1mA	15nC @ 10V	1700pF @ 10V	±20V	Schottky Diode (Body)	1W (Ta)	13.3 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP (5.5x6.0)	8-SOIC (0.173", 4.40mm Width)
NTD4854NT4G	ON Semiconductor	MOSFET N-CH 25V 15.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock215,736	MOSFET (Metal Oxide)	25V	15.7A (Ta), 128A (Tc)	4.5V, 10V	2.5V @ 250µA	49.2nC @ 4.5V	4600pF @ 12V	±20V	-	1.43W (Ta), 93.75W (Tc)	3.6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQB2N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 2.1A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 1.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,944	MOSFET (Metal Oxide)	500V	2.1A (Tc)	10V	5V @ 250µA	8nC @ 10V	230pF @ 25V	±30V	-	3.13W (Ta), 55W (Tc)	5.3 Ohm @ 1.05A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock417,300	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 250µA	94nC @ 10V	2740pF @ 50V	±25V	-	40W (Tc)	115 mOhm @ 13.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,252,200	MOSFET (Metal Oxide)	600V	4.6A (Tc)	10V	4V @ 250µA	13nC @ 10V	420pF @ 50V	±25V	-	45W (Tc)	920 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFP4568	Infineon Technologies	MOSFET N-CH 150V 171A AUTO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10470pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock2,864	MOSFET (Metal Oxide)	150V	171A (Tc)	10V	5V @ 250µA	227nC @ 10V	10470pF @ 50V	±30V	-	517W (Tc)	5.9 mOhm @ 103A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRLR8103VTRPBF	Infineon Technologies	MOSFET N-CH 30V 91A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock34,800	MOSFET (Metal Oxide)	30V	91A (Tc)	4.5V, 10V	3V @ 250µA	27nC @ 5V	2672pF @ 16V	±20V	-	115W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5015DPM-00#T1	Renesas Electronics America	MOSFET N-CH 500V 25A TO3PFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	Package: TO-3PFM, SC-93-3	Stock5,632	MOSFET (Metal Oxide)	500V	25A (Ta)	10V	-	66nC @ 10V	2600pF @ 25V	±30V	-	60W (Tc)	240 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-3PFM	TO-3PFM, SC-93-3
CSD18535KTT	Texas Instruments	MOSFET N-CH 60V 200A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock103,464	MOSFET (Metal Oxide)	60V	200A (Ta)	4.5V, 10V	2.4V @ 250µA	81nC @ 10V	6620pF @ 30V	±20V	-	300W (Tc)	2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DDPAK/TO-263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
IXTP5N50P	IXYS	MOSFET N-CH 500V 4.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,824	MOSFET (Metal Oxide)	500V	4.8A (Tc)	10V	5.5V @ 50µA	12.6nC @ 10V	620pF @ 25V	±30V	-	89W (Tc)	1.4 Ohm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RJK0855DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,848	MOSFET (Metal Oxide)	80V	30A (Ta)	10V	-	35nC @ 10V	2550pF @ 10V	±20V	-	60W (Tc)	11 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
BUK7613-60E,118	Nexperia USA Inc.	MOSFET N-CH 60V 58A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,320	MOSFET (Metal Oxide)	60V	58A (Tc)	10V	4V @ 1mA	22.9nC @ 10V	1730pF @ 25V	±20V	-	96W (Tc)	13 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R6015ENX	Rohm Semiconductor	MOSFET N-CH 600V 15A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,260	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	4V @ 1mA	40nC @ 10V	910pF @ 25V	±20V	-	40W (Tc)	290 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
IRFR9110PBF	Vishay Siliconix	MOSFET P-CH 100V 3.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,968	MOSFET (Metal Oxide)	100V	3.1A (Tc)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF6727MTRPBF	Infineon Technologies	MOSFET N-CH 30V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock42,960	MOSFET (Metal Oxide)	30V	32A (Ta), 180A (Tc)	4.5V, 10V	2.35V @ 100µA	74nC @ 4.5V	6190pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	1.7 mOhm @ 32A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
STD45P4LLF6AG	STMicroelectronics	MOSFET P-CH 40V 50A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3525pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,872	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	65.5nC @ 10V	3525pF @ 25V	±18V	-	58W (Tc)	15 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7655DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 40A PPAK 1212 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock10,584	MOSFET (Metal Oxide)	20V	40A (Tc)	2.5V, 10V	1.1V @ 250µA	225nC @ 10V	6600pF @ 10V	±12V	-	4.8W (Ta), 57W (Tc)	3.6 mOhm @ 20A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
RSD200N05TL	Rohm Semiconductor	MOSFET N-CH 45V 20A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock27,600	MOSFET (Metal Oxide)	45V	20A (Ta)	4V, 10V	2.5V @ 1mA	12nC @ 5V	950pF @ 10V	±20V	-	20W (Tc)	28 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC0904NSI	Infineon Technologies	MOSFET N-CH 30V 20A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,968	MOSFET (Metal Oxide)	30V	20A (Ta), 78A (Tc)	4.5V, 10V	2V @ 250µA	17nC @ 10V	1100pF @ 15V	±20V	-	2.5W (Ta), 37W (Tc)	3.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
SI5415EDU-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 25A PPAK CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 10A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Single Package / Case: PowerPAK? ChipFET? Single	Package: PowerPAK? ChipFET? Single	Stock23,376	MOSFET (Metal Oxide)	20V	25A (Tc)	1.8V, 4.5V	1V @ 250µA	120nC @ 8V	4300pF @ 10V	±8V	-	3.1W (Ta), 31W (Tc)	9.8 mOhm @ 10A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFet Single	PowerPAK? ChipFET? Single
ZXMP6A13GTA	Diodes Incorporated	MOSFET P-CH 60V 1.7A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 219pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 390 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock464,952	MOSFET (Metal Oxide)	60V	1.7A (Ta)	4.5V, 10V	1V @ 250µA	5.9nC @ 10V	219pF @ 30V	±20V	-	2W (Ta)	390 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
APT9M100S	Microchip Technology	MOSFET N-CH 1000V 9A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock258	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	5V @ 1mA	80 nC @ 10 V	2605 pF @ 25 V	±30V	-	335W (Tc)	1.4Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
DMN3016LFDFQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	4.5V, 10V	2V @ 250µA	25.1 nC @ 10 V	1415 pF @ 15 V	±20V	-	730mW (Ta)	12mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
2SK2462-04-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TW107N65C-S1F	Toshiba Semiconductor and Storage	G3 650V SIC-MOSFET TO-247 107MO FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock240	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	5V @ 1.2mA	21 nC @ 18 V	600 pF @ 400 V	+25V, -10V	-	76W (Tc)	145mOhm @ 10A, 18V	175°C	Through Hole	TO-247	TO-247-3