Page 98 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPA50R280CE
Infineon Technologies

MOSFET N-CH 500V 13A PG-TO220FP

Package: TO-220-3 Full Pack

Stock427,212
SPP15P10PLGHKSA1
Infineon Technologies

MOSFET P-CH 100V 15A TO-220

Package: TO-220-3

Stock6,880
IRL1104L
Infineon Technologies

MOSFET N-CH 40V 104A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,168
NTMS4503NSR2G
ON Semiconductor

MOSFET N-CH 28V 14A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,568
JAN2N6766T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock3,856
SI6459BDQ-T1-GE3
Vishay Siliconix

MOSFET P-CH 60V 2.2A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock3,120
IXFH160N15T
IXYS

MOSFET N-CH 150V 160A TO-247

Package: TO-247-3

Stock423,696
FQD6N60CTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock68,064
FDB8876
Fairchild/ON Semiconductor

MOSFET N-CH 30V 71A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
IPP65R190CFDAAKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220-3

Package: TO-220-3

Stock3,392
BUZ30AH3045AATMA1
Infineon Technologies

MOSFET N-CH 200V 21A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,400
IXFP10N60P
IXYS

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3

Stock4,864
NVMFS5C442NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock2,320
PMPB95ENEA/FX
Nexperia USA Inc.

PMPB95ENEA/SOT1220/SOT1220

Package: -

Stock4,320
AO7412
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 2.1A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock458,424
AOW11N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock21,408
IRF40H210
Infineon Technologies

MOSFET N-CH 40V 100A PQFN5X6

Package: 8-PowerVDFN

Stock7,136
PMXB120EPE
Nexperia USA Inc.

MOSFET P-CH 30V 2.4A 3DFN

Package: 3-XDFN Exposed Pad

Stock5,696
FCH130N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 28A TO247

Package: TO-247-3

Stock103,464
IRFR15N20DPBF
Infineon Technologies

MOSFET N-CH 200V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock14,988

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA50R280CE	Infineon Technologies	MOSFET N-CH 500V 13A PG-TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 30.4W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock427,212	MOSFET (Metal Oxide)	500V	13A (Tc)	13V	3.5V @ 350µA	32.6nC @ 10V	773pF @ 100V	±20V	Super Junction	30.4W (Tc)	280 mOhm @ 4.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220FP	TO-220-3 Full Pack
SPP15P10PLGHKSA1	Infineon Technologies	MOSFET P-CH 100V 15A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1.54mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,880	MOSFET (Metal Oxide)	100V	15A (Tc)	4.5V, 10V	2V @ 1.54mA	62nC @ 10V	1490pF @ 25V	±20V	-	128W (Tc)	200 mOhm @ 11.3A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRL1104L	Infineon Technologies	MOSFET N-CH 40V 104A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,168	MOSFET (Metal Oxide)	40V	104A (Tc)	4.5V, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	±16V	-	2.4W (Ta), 167W (Tc)	8 mOhm @ 62A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NTMS4503NSR2G	ON Semiconductor	MOSFET N-CH 28V 14A 8SO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,568	-	-	-	-	-	-	-	-	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
JAN2N6766T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock3,856	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	90 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
SI6459BDQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 60V 2.2A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock3,120	MOSFET (Metal Oxide)	60V	2.2A (Ta)	4.5V, 10V	3V @ 250µA	22nC @ 10V	-	±20V	-	1W (Ta)	115 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IXFH160N15T	IXYS	MOSFET N-CH 150V 160A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock423,696	MOSFET (Metal Oxide)	150V	160A (Tc)	10V	5V @ 1mA	160nC @ 10V	8800pF @ 25V	±30V	-	830W (Tc)	9.6 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FQD6N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock68,064	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	±30V	-	80W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDB8876	Fairchild/ON Semiconductor	MOSFET N-CH 30V 71A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	30V	71A (Tc)	4.5V, 10V	2.5V @ 250µA	45nC @ 10V	1700pF @ 15V	±20V	-	70W (Tc)	8.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP65R190CFDAAKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,392	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	4.5V @ 700µA	68nC @ 10V	1850pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
BUZ30AH3045AATMA1	Infineon Technologies	MOSFET N-CH 200V 21A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,400	MOSFET (Metal Oxide)	200V	21A (Tc)	10V	4V @ 1mA	-	1900pF @ 25V	±20V	-	125W (Tc)	130 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFP10N60P	IXYS	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,864	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5.5V @ 1mA	32nC @ 10V	1610pF @ 25V	±30V	-	200W (Tc)	740 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS5C442NWFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,320	MOSFET (Metal Oxide)	40V	-	10V	4V @ 250µA	32nC @ 10V	2100pF @ 25V	±20V	-	3.7W (Ta), 83W (Tc)	2.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
PMPB95ENEA/FX	Nexperia USA Inc.	PMPB95ENEA/SOT1220/SOT1220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO7412	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 2.1A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock458,424	MOSFET (Metal Oxide)	30V	1.7A (Ta)	2.5V, 10V	1.8V @ 250µA	3.6nC @ 4.5V	270pF @ 15V	±12V	-	350mW (Ta)	90 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
AOW11N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock21,408	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4.5V @ 250µA	37nC @ 10V	1990pF @ 25V	±30V	-	272W (Tc)	700 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF40H210	Infineon Technologies	MOSFET N-CH 40V 100A PQFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5406pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,136	MOSFET (Metal Oxide)	40V	100A (Tc)	6V, 10V	3.7V @ 150µA	152nC @ 10V	5406pF @ 25V	±20V	-	125W (Tc)	1.7 mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
PMXB120EPE	Nexperia USA Inc.	MOSFET P-CH 30V 2.4A 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 309pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Package: 3-XDFN Exposed Pad	Stock5,696	MOSFET (Metal Oxide)	30V	2.4A (Ta)	4.5V, 10V	2.5V @ 250µA	11nC @ 10V	309pF @ 15V	±20V	-	400mW (Ta), 8.3W (Tc)	120 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
FCH130N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 28A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	3.5V @ 250µA	70nC @ 10V	3590pF @ 380V	±20V	-	278W (Tc)	130 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IRFR15N20DPBF	Infineon Technologies	MOSFET N-CH 200V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock14,988	MOSFET (Metal Oxide)	200V	17A (Tc)	10V	5.5V @ 250µA	41nC @ 10V	910pF @ 25V	±30V	-	3W (Ta), 140W (Tc)	165 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMG7408SFG-7	Diodes Incorporated	MOSFET N-CH 30V 7A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock22,926	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2.4V @ 250µA	17nC @ 10V	478.9pF @ 15V	±20V	-	1W (Ta)	23 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
IRLZ14SPBF	Vishay Siliconix	MOSFET N-CH 60V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,972	MOSFET (Metal Oxide)	60V	10A (Tc)	4V, 5V	2V @ 250µA	8.4nC @ 5V	400pF @ 25V	±10V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3J334R,LF	Toshiba Semiconductor and Storage	MOSFET P CH 30V 4A SOT-23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock209,658	MOSFET (Metal Oxide)	30V	4A (Ta)	4V, 10V	2V @ 100µA	5.9nC @ 10V	280pF @ 15V	±20V	-	1W (Ta)	71 mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
AOT66919L	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	25A (Ta), 105A (Tc)	4.5V, 10V	2.6V @ 250µA	66 nC @ 10 V	3420 pF @ 50 V	±20V	-	10W (Ta), 187W (Tc)	6.8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
PJQ5472A_R2_00001	Panjit International Inc.	100V N-CHANNEL ENHANCEMENT MODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2.9A (Ta), 13A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 10 V	1413 pF @ 25 V	±20V	-	2W (Ta), 41W (Tc)	115mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
FQU13N06LTU-WS	onsemi	MOSFET N-CH 60V 11A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Stock97,767	MOSFET (Metal Oxide)	60 V	11A (Tc)	5V, 10V	2.5V @ 250µA	6.4 nC @ 5 V	350 pF @ 25 V	±20V	-	2.5W (Ta), 28W (Tc)	115mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
SIHB120N60E-T1-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,280	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	5V @ 250µA	45 nC @ 10 V	1562 pF @ 100 V	±30V	-	179W (Tc)	120mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BUK9M9R5-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 40A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 25 V Vgs (Max): +16V, -10V FET Feature: - Power Dissipation (Max): 55W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock30,696	MOSFET (Metal Oxide)	40 V	40A (Ta)	4.5V, 10V	2.15V @ 1mA	24 nC @ 10 V	1537 pF @ 25 V	+16V, -10V	-	55W (Ta)	9.5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)