Page 96 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP80N04S2L03AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

Package: TO-220-3

Stock5,648
BSC024N025S G
Infineon Technologies

MOSFET N-CH 25V 100A TDSON-8

Package: 8-PowerTDFN

Stock7,600
BSL207SP
Infineon Technologies

MOSFET P-CH 20V 6A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock434,928
SPP80P06PBKSA1
Infineon Technologies

MOSFET P-CH 60V 80A TO-220AB

Package: TO-220-3

Stock5,168
AOL1432A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 12A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock426,000
NTMFS4943NT3G
ON Semiconductor

MOSFET N-CH 30V 8.3A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,112
IRF9630L
Vishay Siliconix

MOSFET P-CH 200V 6.5A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,536
STD70NH02LT4
STMicroelectronics

MOSFET N-CH 24V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock324,612
IPS031N03LGAKMA1
Infineon Technologies

LV POWER MOS

Package: -

Stock3,808
IXTX4N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-247-3 Variant

Stock6,544
APT56F60L
Microsemi Corporation

MOSFET N-CH 600V 60A TO-264

Package: TO-264-3, TO-264AA

Stock4,480
IXFH15N80
IXYS

MOSFET N-CH 800V 15A TO-247AD

Package: TO-247-3

Stock4,928
IXFP7N80P
IXYS

MOSFET N-CH 800V 7A TO-220

Package: TO-220-3

Stock2,080
SQ3426AEEV-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 7A 6TSOP

Package: -

Stock3,232
FDC30N20DZ
Fairchild/ON Semiconductor

PT8 30/20 WITH ZENER IN SSOT6 DU

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,008
NTTFS5C454NLTAG
ON Semiconductor

MOSFET N-CH 40V 20A WDFN8

Package: 8-PowerWDFN

Stock7,472
SQJQ410EL-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 200A PWRPAK 8X8

Package: 8-PowerTDFN

Stock6,384
FDU7N60NZTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V SGL IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock34,068
PCP1403-TD-H
ON Semiconductor

MOSFET N-CH 60V 4.5A SOT89

Package: TO-243AA

Stock24,000
STB35N65M5
STMicroelectronics

MOSFET N-CH 650V 27A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP80N04S2L03AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 213nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock5,648	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2V @ 250µA	213nC @ 10V	6000pF @ 25V	±20V	-	300W (Tc)	3.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BSC024N025S G	Infineon Technologies	MOSFET N-CH 25V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,600	MOSFET (Metal Oxide)	25V	27A (Ta), 100A (Tc)	4.5V, 10V	2V @ 90µA	52nC @ 5V	6530pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BSL207SP	Infineon Technologies	MOSFET P-CH 20V 6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock434,928	MOSFET (Metal Oxide)	20V	6A (Ta)	2.5V, 4.5V	1.2V @ 40µA	20nC @ 4.5V	1007pF @ 15V	±12V	-	2W (Ta)	41 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
SPP80P06PBKSA1	Infineon Technologies	MOSFET P-CH 60V 80A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,168	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 5.5mA	173nC @ 10V	5033pF @ 25V	±20V	-	340W (Tc)	23 mOhm @ 64A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
AOL1432A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 25V 12A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock426,000	MOSFET (Metal Oxide)	25V	12A (Ta), 44A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1450pF @ 12.5V	±20V	-	2.1W (Ta), 30W (Tc)	7.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
NTMFS4943NT3G	ON Semiconductor	MOSFET N-CH 30V 8.3A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 910mW (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,112	MOSFET (Metal Oxide)	30V	8.3A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	20.9nC @ 10V	1401pF @ 15V	±20V	-	910mW (Ta), 22.3W (Tc)	7.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRF9630L	Vishay Siliconix	MOSFET P-CH 200V 6.5A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,536	MOSFET (Metal Oxide)	200V	6.5A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	-	800 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STD70NH02LT4	STMicroelectronics	MOSFET N-CH 24V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock324,612	MOSFET (Metal Oxide)	24V	60A (Tc)	5V, 10V	1.8V @ 250µA	22nC @ 10V	2050pF @ 25V	±20V	-	70W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPS031N03LGAKMA1	Infineon Technologies	LV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,808	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTX4N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 12.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,544	MOSFET (Metal Oxide)	3000V	4A (Tc)	10V	5V @ 250µA	139nC @ 10V	3680pF @ 25V	±20V	-	960W (Tc)	12.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
APT56F60L	Microsemi Corporation	MOSFET N-CH 600V 60A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,480	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	5V @ 2.5mA	280nC @ 10V	11300pF @ 25V	±30V	-	1040W (Tc)	110 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXFH15N80	IXYS	MOSFET N-CH 800V 15A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,928	MOSFET (Metal Oxide)	800V	15A (Tc)	10V	4.5V @ 4mA	200nC @ 10V	4870pF @ 25V	±20V	-	300W (Tc)	600 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFP7N80P	IXYS	MOSFET N-CH 800V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 1.44 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,080	MOSFET (Metal Oxide)	800V	7A (Tc)	10V	5V @ 1mA	32nC @ 10V	1890pF @ 25V	±30V	-	200W (Tc)	1.44 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SQ3426AEEV-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 7A 6TSOP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDC30N20DZ	Fairchild/ON Semiconductor	PT8 30/20 WITH ZENER IN SSOT6 DU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,008	MOSFET (Metal Oxide)	30V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	7.9nC @ 10V	535pF @ 15V	±20V	-	960mW (Ta)	31 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6 Thin, TSOT-23-6
NTTFS5C454NLTAG	ON Semiconductor	MOSFET N-CH 40V 20A WDFN8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,472	MOSFET (Metal Oxide)	40V	20A (Ta), 85A (Tc)	4.5V, 10V	2V @ 45µA	18nC @ 10V	1600pF @ 25V	±20V	-	3.2W (Ta), 55W (Tc)	3.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SQJQ410EL-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 200A PWRPAK 8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 8 x 8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,384	MOSFET (Metal Oxide)	40V	200A (Tc)	4.5V, 10V	2.5V @ 250µA	220nC @ 10V	14500pF @ 25V	±20V	-	150W (Tc)	1.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 8 x 8	8-PowerTDFN
FDU7N60NZTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V SGL IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock34,068	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	730pF @ 25V	±25V	-	90W (Tc)	1.25 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PCP1403-TD-H	ON Semiconductor	MOSFET N-CH 60V 4.5A SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89/PCP-1 Package / Case: TO-243AA	Package: TO-243AA	Stock24,000	MOSFET (Metal Oxide)	60V	4.5A (Ta)	4V, 10V	2.6V @ 1mA	6.7nC @ 10V	310pF @ 20V	±20V	-	3.5W (Tc)	117 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	SOT-89/PCP-1	TO-243AA
STB35N65M5	STMicroelectronics	MOSFET N-CH 650V 27A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,000	MOSFET (Metal Oxide)	650V	27A (Tc)	10V	5V @ 250µA	83nC @ 10V	3750pF @ 100V	±25V	-	160W (Tc)	98 mOhm @ 13.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GT100N04D3	Goford Semiconductor	N40V, 13A,RD<10M@10V,VTH1.0V~2.5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.15x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock13,827	MOSFET (Metal Oxide)	40 V	13A (Tc)	4.5V, 10V	2.5V @ 250µA	32 nC @ 10 V	642 pF @ 20 V	±20V	-	23W (Tc)	10mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3.15x3.05)	8-PowerVDFN
2SJ624-T1B-AT	Renesas Electronics Corporation	MOSFET P-CH 20V SC-96 SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 813 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SC-96-3, Thin Mini Mold Package / Case: SC-96	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4.5A (Ta)	-	1.5V @ 1mA	8.1 nC @ 4 V	813 pF @ 10 V	-	-	-	54mOhm @ 2.5A, 4.5V	-	Surface Mount	SC-96-3, Thin Mini Mold	SC-96
CMS32P03V8-HF	Comchip Technology	MOSFET P-CH 30V 7.7A/32A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7.7A (Ta), 32A (Tc)	4.5V, 10V	2.5V @ 250µA	12.5 nC @ 4.5 V	1345 pF @ 15 V	±20V	-	1.6W (Ta), 29W (Tc)	20mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (SPR-PAK ) (3.3x3.3)	8-PowerWDFN
CMS3401-HF	Comchip Technology	MOSFET P-CH 30V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY48P05T-TRL	IXYS	MOSFET P-CH 50V 48A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	4.5V @ 250µA	53 nC @ 10 V	3660 pF @ 25 V	±15V	-	150W (Tc)	30mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ3E100ATTB	Rohm Semiconductor	MOSFET P-CH 30V 10A/31A 8HSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: -	Stock21,936	MOSFET (Metal Oxide)	30 V	10A (Ta), 31A (Tc)	4.5V, 10V	2.5V @ 1mA	42 nC @ 10 V	1900 pF @ 15 V	±20V	-	2W (Ta)	11.4mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
NVH082N65S3F	onsemi	SUPERFER3 FRFET AUTOMOTIVE 82MOH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	5V @ 1mA	81 nC @ 10 V	3410 pF @ 400 V	±30V	-	313W (Tc)	82mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SQJ418EP-T1_BE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock27,000	MOSFET (Metal Oxide)	100 V	48A (Tc)	10V	3.5V @ 250µA	35 nC @ 10 V	1700 pF @ 25 V	±20V	-	68W (Tc)	14mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8