Page 983 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOB414_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 51A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,968
STW20NM50
STMicroelectronics

MOSFET N-CH 550V 20A TO-247

Package: TO-247-3

Stock43,896
IXFR15N100P
IXYS

MOSFET N-CH 1000V ISOPLUS247

Package: ISOPLUS247?

Stock2,608
NTMFS10N7D2C
Fairchild/ON Semiconductor

PTNG 100/20V NCH POWER TRENCH MO

Package: -

Stock7,328
DMT6002LPS-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI506

Package: 8-PowerTDFN

Stock7,616
NCV8440ASTT3G
ON Semiconductor

MOSFET N-CH 59V 2.6A SOT-223-4

Package: TO-261-4, TO-261AA

Stock16,320
EFC6604R-A-TR
ON Semiconductor

MOSFET N-CH 24V 6A EFCP

Package: 6-XFBGA

Stock3,808
SISS98DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 14.1A 1212-8

Package: PowerPAK? 1212-8

Stock5,664
AOD413A
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 12A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock736,608
PSMN7R0-100ES,127
Nexperia USA Inc.

MOSFET N-CH 100V I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock20,592
IRFI740GPBF
Vishay Siliconix

MOSFET N-CH 400V 5.4A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock133,200
FCH150N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 24A

Package: TO-247-3

Stock9,084
FQPF9P25YDTU
Fairchild/ON Semiconductor

MOSFET P-CH 250V 6A

Package: TO-220-3 Full Pack, Formed Leads

Stock13,524
SI4160DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 25.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,300,212
IPA60R099C6
Infineon Technologies

MOSFET N-CH 600V 37.9A TO220-FP

Package: TO-220-3 Full Pack

Stock4,256
DMTH46M7SFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

Package: -

Request a Quote
R8005ANJGTL
Rohm Semiconductor

NCH 800V 5A POWER MOSFET : R8005

Package: -

Stock5,952
2SK2461-AZ
Renesas

2SK2461 - SILICON N CHANNEL MOSF

Package: -

Request a Quote
DMP4065SQ-13
Diodes Incorporated

MOSFET P-CH 40V 2.4A SOT23 T&R

Package: -

Request a Quote
NTBG015N065SC1
onsemi

SILICON CARBIDE MOSFET, NCHANNEL

Package: -

Stock4,335

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOB414_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 51A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,968	MOSFET (Metal Oxide)	100V	6.6A (Ta), 51A (Tc)	7V, 10V	4V @ 250µA	34nC @ 10V	2200pF @ 50V	±25V	-	2.5W (Ta), 150W (Tc)	25 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW20NM50	STMicroelectronics	MOSFET N-CH 550V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock43,896	MOSFET (Metal Oxide)	550V	20A (Tc)	10V	5V @ 250µA	56nC @ 10V	1480pF @ 25V	±30V	-	214W (Tc)	250 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFR15N100P	IXYS	MOSFET N-CH 1000V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,608	MOSFET (Metal Oxide)	1000V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
NTMFS10N7D2C	Fairchild/ON Semiconductor	PTNG 100/20V NCH POWER TRENCH MO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT6002LPS-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6555pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,616	MOSFET (Metal Oxide)	60V	100A (Tc)	6V, 10V	3V @ 250µA	130.8nC @ 10V	6555pF @ 30V	±20V	-	2.3W	2 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
NCV8440ASTT3G	ON Semiconductor	MOSFET N-CH 59V 2.6A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 35V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.69W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock16,320	MOSFET (Metal Oxide)	59V	2.6A (Ta)	3.5V, 10V	1.9V @ 100µA	4.5nC @ 4.5V	155pF @ 35V	±15V	-	1.69W (Ta)	110 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
EFC6604R-A-TR	ON Semiconductor	MOSFET N-CH 24V 6A EFCP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-EFCP (1.9x1.46) Package / Case: 6-XFBGA	Package: 6-XFBGA	Stock3,808	-	-	-	-	-	-	-	-	-	-	-	150°C (TJ)	Surface Mount	6-EFCP (1.9x1.46)	6-XFBGA
SISS98DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 14.1A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 7.5V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock5,664	MOSFET (Metal Oxide)	200V	14.1A (Tc)	7.5V, 10V	4V @ 250µA	14nC @ 7.5V	608pF @ 100V	±20V	-	57W (Tc)	105 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
AOD413A	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V 12A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock736,608	MOSFET (Metal Oxide)	40V	12A (Tc)	4.5V, 10V	3V @ 250µA	21nC @ 10V	1125pF @ 20V	±20V	-	2.5W (Ta), 50W (Tc)	44 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN7R0-100ES,127	Nexperia USA Inc.	MOSFET N-CH 100V I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6686pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 269W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock20,592	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 1mA	125nC @ 10V	6686pF @ 50V	±20V	-	269W (Tc)	6.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFI740GPBF	Vishay Siliconix	MOSFET N-CH 400V 5.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock133,200	MOSFET (Metal Oxide)	400V	5.4A (Tc)	10V	4V @ 250µA	66nC @ 10V	1370pF @ 25V	±20V	-	40W (Tc)	550 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
FCH150N65F_F155	Fairchild/ON Semiconductor	MOSFET N-CH 650V 24A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock9,084	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 2.4mA	94nC @ 10V	3737pF @ 100V	±20V	-	298W (Tc)	150 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
FQPF9P25YDTU	Fairchild/ON Semiconductor	MOSFET P-CH 250V 6A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock13,524	MOSFET (Metal Oxide)	250V	6A (Tc)	10V	5V @ 250µA	38nC @ 10V	1180pF @ 25V	±30V	-	50W (Tc)	620 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
SI4160DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 25.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,300,212	MOSFET (Metal Oxide)	30V	25.4A (Tc)	4.5V, 10V	2.4V @ 250µA	54nC @ 10V	2071pF @ 15V	±20V	-	2.5W (Ta), 5.7W (Tc)	4.9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPA60R099C6	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,256	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	3.5V @ 1.21mA	119nC @ 10V	2660pF @ 100V	±20V	-	35W (Tc)	99 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
DMTH46M7SFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	16.3A (Ta), 67.2A (Tc)	10V	4V @ 250µA	14.8 nC @ 10 V	1315 pF @ 20 V	±20V	-	3.2W (Ta), 54.5W (Tc)	7.4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
R8005ANJGTL	Rohm Semiconductor	NCH 800V 5A POWER MOSFET : R8005 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263S Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,952	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	5V @ 1mA	20 nC @ 10 V	500 pF @ 25 V	±30V	-	120W (Tc)	2.1Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TO-263S	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK2461-AZ	Renesas	2SK2461 - SILICON N CHANNEL MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	20A (Ta)	4V, 10V	2V @ 1mA	51 nC @ 10 V	1400 pF @ 10 V	±20V	-	2W (Ta), 35W (Tc)	80mOhm @ 10A, 10V	150°C	Through Hole	ITO-220AB	TO-220-3 Full Pack, Isolated Tab
DMP4065SQ-13	Diodes Incorporated	MOSFET P-CH 40V 2.4A SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	2.4A (Ta)	4.5V, 10V	3V @ 250µA	12.2 nC @ 10 V	587 pF @ 20 V	±20V	-	720mW (Ta)	80mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTBG015N065SC1	onsemi	SILICON CARBIDE MOSFET, NCHANNEL FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 25mA Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,335	SiCFET (Silicon Carbide)	650 V	145A (Tc)	15V, 18V	4.3V @ 25mA	283 nC @ 18 V	4689 pF @ 325 V	+22V, -8V	-	500W (Tc)	18mOhm @ 75A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPD650P06NMATMA1	Infineon Technologies	MOSFET P-CH 60V 22A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.04mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock35,430	MOSFET (Metal Oxide)	60 V	22A (Tc)	10V	4V @ 1.04mA	39 nC @ 10 V	1600 pF @ 30 V	±20V	-	83W (Tc)	65mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJP3NA50_T0_00001	Panjit International Inc.	500V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	3A (Ta)	10V	4V @ 250µA	6.5 nC @ 10 V	260 pF @ 25 V	±30V	-	44W (Tc)	3.2Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RQ3L070BGTB1	Rohm Semiconductor	NCH 60V 20A, HSMT8G, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 24.7mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: -	Stock8,835	MOSFET (Metal Oxide)	60 V	7A (Ta), 20A (Tc)	4.5V, 10V	2.5V @ 1mA	7.6 nC @ 10 V	460 pF @ 30 V	±20V	-	2W (Ta), 15W (Tc)	24.7mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
IPD30N12S3L31ATMA2	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	30A (Tc)	4.5V, 10V	2.4V @ 29µA	31 nC @ 10 V	1970 pF @ 25 V	±20V	-	57W (Tc)	31mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6020JNZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 20A TO247G FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 252W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	Package: -	Stock1,065	MOSFET (Metal Oxide)	600 V	20A (Tc)	15V	7V @ 3.5mA	45 nC @ 15 V	1500 pF @ 100 V	±30V	-	252W (Tc)	234mOhm @ 10A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-247G	TO-247-3
AONR36368	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 23A/32A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerVDFN	Package: -	Stock12,474	MOSFET (Metal Oxide)	30 V	23A (Ta), 32A (Tc)	4.5V, 10V	2.1V @ 250µA	25 nC @ 10 V	1305 pF @ 15 V	±20V	-	4.1W (Ta), 24W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN
CDM4-600LR-TR13-PBFREE	Central Semiconductor Corp	MOSFET N-CH 600V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,534	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4V @ 250µA	11.59 nC @ 10 V	328 pF @ 100 V	30V	-	38W (Tc)	950mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK33S10N1L-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 33A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,491	MOSFET (Metal Oxide)	100 V	33A (Ta)	4.5V, 10V	2.5V @ 500µA	33 nC @ 10 V	2250 pF @ 10 V	±20V	-	125W (Tc)	9.7mOhm @ 16.5A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63