Page 984 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

NP60N04MUK-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 60A TO-220

Package: TO-220-3 Full Pack

Stock3,072
FQI19N20CTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 19A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,024
IXFN30N110P
IXYS

MOSFET N-CH 1100V 25A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,400
IXTP50N20P
IXYS

MOSFET N-CH 200V 50A TO-220

Package: TO-220-3

Stock6,208
IXTU01N80
IXYS

MOSFET N-CH 800V 0.1A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,056
IRF734
Vishay Siliconix

MOSFET N-CH 450V 4.9A TO-220AB

Package: TO-220-3

Stock398,100
PSMN018-100PSFQ
Nexperia USA Inc.

MOSFET N-CH 100V 53A TO220AB

Package: TO-220-3

Stock2,000
NTTFS4C58NTAG
ON Semiconductor

MOSFET N-CH 30V 48A U8FL

Package: 8-PowerWDFN

Stock33,540
IRLR8743TRPBF
Infineon Technologies

MOSFET N-CH 30V 160A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock11,028
RU1C001UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.1A UMT3F

Package: SC-85

Stock72,000
STH145N8F7-2AG
STMicroelectronics

MOSFET N-CH 80V 90A

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,008
NVMFS6B14NLWFT1G
ON Semiconductor

MOSFET N-CH 100V 11A DFN5

Package: 8-PowerTDFN

Stock7,856
SIJ420DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock82,800
IXTP18P10T
IXYS

MOSFET P-CH 100V 18A TO-220

Package: TO-220-3

Stock438,000
AO3413
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock12,638,568
RK7002BT116
Rohm Semiconductor

MOSFET N-CH 60V 0.25A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,046,388
SQJ152ELP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 123A PPAK SO-8

Package: -

Stock2,697
SQS160ELNW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Package: -

Request a Quote
IPW95R060PFD7XKSA1
Infineon Technologies

MOSFET N-CH 950V 74.7A TO247-3

Package: -

Stock996
IPP026N10NF2SAKMA1
Infineon Technologies

TRENCH >=100V

Package: -

Stock4,491

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NP60N04MUK-S18-AY	Renesas Electronics America	MOSFET N-CH 40V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,072	MOSFET (Metal Oxide)	40V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3680pF @ 25V	±20V	-	1.8W (Ta), 105W (Tc)	4.3 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack
FQI19N20CTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 19A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,024	MOSFET (Metal Oxide)	200V	19A (Tc)	10V	4V @ 250µA	53nC @ 10V	1080pF @ 25V	±30V	-	3.13W (Ta), 139W (Tc)	170 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFN30N110P	IXYS	MOSFET N-CH 1100V 25A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,400	MOSFET (Metal Oxide)	1100V	25A	10V	6.5V @ 1mA	235nC @ 10V	13600pF @ 25V	±30V	-	695W (Tc)	360 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTP50N20P	IXYS	MOSFET N-CH 200V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,208	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	5V @ 250µA	70nC @ 10V	2720pF @ 25V	±20V	-	360W (Tc)	60 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTU01N80	IXYS	MOSFET N-CH 800V 0.1A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,056	MOSFET (Metal Oxide)	800V	100mA (Tc)	10V	4.5V @ 25µA	8nC @ 10V	60pF @ 25V	±20V	-	25W (Tc)	50 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IRF734	Vishay Siliconix	MOSFET N-CH 450V 4.9A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock398,100	MOSFET (Metal Oxide)	450V	4.9A (Tc)	10V	4V @ 250µA	45nC @ 10V	680pF @ 25V	±20V	-	74W (Tc)	1.2 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN018-100PSFQ	Nexperia USA Inc.	MOSFET N-CH 100V 53A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 53A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1482pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 111W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	100V	53A (Ta)	7V, 10V	4V @ 1mA	21.4nC @ 10V	1482pF @ 50V	±20V	-	111W (Ta)	18 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTTFS4C58NTAG	ON Semiconductor	MOSFET N-CH 30V 48A U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock33,540	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRLR8743TRPBF	Infineon Technologies	MOSFET N-CH 30V 160A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4880pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock11,028	MOSFET (Metal Oxide)	30V	160A (Tc)	4.5V, 10V	2.35V @ 100µA	59nC @ 4.5V	4880pF @ 15V	±20V	-	135W (Tc)	3.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RU1C001UNTCL	Rohm Semiconductor	MOSFET N-CH 20V 0.1A UMT3F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock72,000	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	7.1pF @ 10V	±12V	-	150mW (Ta)	3.5 Ohm @ 100mA, 4.5V	150°C (TJ)	Surface Mount	UMT3F	SC-85
STH145N8F7-2AG	STMicroelectronics	MOSFET N-CH 80V 90A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,008	MOSFET (Metal Oxide)	80V	90A (Tc)	10V	4.5V @ 250µA	96nC @ 10V	6340pF @ 40V	±20V	-	200W (Tc)	4 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab) Variant
NVMFS6B14NLWFT1G	ON Semiconductor	MOSFET N-CH 100V 11A DFN5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,856	MOSFET (Metal Oxide)	100V	11A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1680pF @ 25V	±16V	-	3.8W (Ta), 94W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SIJ420DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock82,800	MOSFET (Metal Oxide)	20V	50A (Tc)	4.5V, 10V	2.4V @ 250µA	90nC @ 10V	3630pF @ 10V	±20V	-	4.8W (Ta), 62.5W (Tc)	2.6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IXTP18P10T	IXYS	MOSFET P-CH 100V 18A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock438,000	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4.5V @ 250µA	39nC @ 10V	2100pF @ 25V	±15V	-	83W (Tc)	120 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
AO3413	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 97 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock12,638,568	MOSFET (Metal Oxide)	20V	3A (Ta)	1.8V, 4.5V	1V @ 250µA	6.1nC @ 4.5V	540pF @ 10V	±8V	-	1.4W (Ta)	97 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
RK7002BT116	Rohm Semiconductor	MOSFET N-CH 60V 0.25A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,046,388	MOSFET (Metal Oxide)	60V	250mA (Ta)	2.5V, 10V	2.3V @ 1mA	-	15pF @ 25V	±20V	-	200mW (Ta)	2.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
SQJ152ELP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 123A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock2,697	MOSFET (Metal Oxide)	40 V	123A (Tc)	4.5V, 10V	2.2V @ 250µA	34 nC @ 10 V	1633 pF @ 25 V	±20V	-	136W (Tc)	5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQS160ELNW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 60 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 141A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3866 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK® 1212-8SLW Package / Case: PowerPAK® 1212-8SLW	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	141A (Tc)	4.5V, 10V	2.5V @ 250µA	71 nC @ 10 V	3866 pF @ 25 V	±20V	-	113W (Tc)	4.3mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK® 1212-8SLW	PowerPAK® 1212-8SLW
IPW95R060PFD7XKSA1	Infineon Technologies	MOSFET N-CH 950V 74.7A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 2.85mA Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock996	MOSFET (Metal Oxide)	950 V	74.7A (Tc)	10V	3.5V @ 2.85mA	315 nC @ 10 V	9378 pF @ 400 V	±20V	-	446W (Tc)	60mOhm @ 57A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IPP026N10NF2SAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 184A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 169µA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock4,491	MOSFET (Metal Oxide)	100 V	27A (Ta), 184A (Tc)	6V, 10V	3.8V @ 169µA	154 nC @ 10 V	7300 pF @ 50 V	±20V	-	3.8W (Ta), 250W (Tc)	2.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
NVTFS6H860NLWFTAG	onsemi	MOSFET N-CH 80V 8.1A/30A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	8.1A (Ta), 30A (Tc)	4.5V, 10V	2V @ 30µA	12 nC @ 10 V	610 pF @ 40 V	±20V	-	3.1W (Ta), 42W (Tc)	20mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
35N06	UMW	TO-252 N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36.2W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,380	MOSFET (Metal Oxide)	60 V	35A (Tc)	4.5V, 10V	2V @ 250µA	21.2 nC @ 10 V	939 pF @ 30 V	±20V	-	36.2W (Tc)	29mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
XPH4R714MC-L1XHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 60A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock133,077	MOSFET (Metal Oxide)	40 V	60A (Ta)	4.5V, 10V	2.1V @ 1mA	160 nC @ 10 V	5640 pF @ 10 V	+10V, -20V	-	960mW (Ta), 132W (Tc)	4.7mOhm @ 30A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
R6530KNZ4C13	Rohm Semiconductor	650V 30A TO-247, HIGH-SPEED SWIT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	Package: -	Stock1,113	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 960µA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	305W (Tc)	140mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-247G	TO-247-3
MMFTP2319A-AQ	Diotec Semiconductor	IC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 97mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	4.2A (Ta)	4.5V, 10V	2.5V @ 250µA	8.2 nC @ 10 V	432 pF @ 20 V	±20V	-	750mW (Ta)	97mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AS1M040120T	ANBON SEMICONDUCTOR (INT'L) LIMITED	N-CHANNEL SILICON CARBIDE POWER FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock51	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	4V @ 10mA	142 nC @ 20 V	2946 pF @ 1000 V	+25V, -10V	-	330W (Tc)	55mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
AONS66612T	Alpha & Omega Semiconductor Inc.	60V N-CHANNEL ALPHASGT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock17,934	MOSFET (Metal Oxide)	60 V	48A (Ta), 100A (Tc)	6V, 10V	3.5V @ 250µA	110 nC @ 10 V	5300 pF @ 30 V	±20V	-	7.5W (Ta), 250W (Tc)	1.65mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
AOI66406	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	25A (Ta), 60A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1480 pF @ 20 V	±20V	-	6.2W (Ta), 52W (Tc)	6.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPAK