Page 997 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP80N06S2L-11
Infineon Technologies

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock4,544
IRFSL23N15DPBF
Infineon Technologies

MOSFET N-CH 150V 23A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,096
2SK4196LS-1E
ON Semiconductor

MOSFET N-CH 500V 5.5A TO-220FI

Package: TO-220-3

Stock3,904
GP1M009A060FH
Global Power Technologies Group

MOSFET N-CH 600V 9A TO220F

Package: TO-220-3 Full Pack

Stock2,608
NTS4172NT1G
ON Semiconductor

MOSFET N-CH 30V 1.6A SC70-3

Package: SC-70, SOT-323

Stock552,012
ZVNL120CSTOB
Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

Package: E-Line-3

Stock3,168
BSP612PH6327XTSA1
Infineon Technologies

SMALL SIGNAL+P-CH

Package: -

Stock6,000
CWDM305P TR13
Central Semiconductor Corp

MOSFET P-CH 16V 5.3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,216
FM6L52020L
Panasonic Electronic Components

MOSFET N-CH 20V 2.2A MINI6-F1

Package: 6-SMD, Flat Leads

Stock7,792
CPH3448-TL-W
ON Semiconductor

MOSFET N-CH 30V 4A CPH3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,936
TSM10N80CZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3

Stock3,664
FQP8N90C
Fairchild/ON Semiconductor

MOSFET N-CH 900V 6.3A TO-220

Package: TO-220-3

Stock110,496
FDB8447L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock56,196
SVD2955T4G
ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960
IRFPC50PBF
Vishay Siliconix

MOSFET N-CH 600V 11A TO-247AC

Package: TO-247-3

Stock5,840
SI8425DB-T1-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

Package: 4-UFBGA, WLCSP

Stock720,000
NVMFS5C404NLAFT1G
ON Semiconductor

MOSFET N-CH 40V 370A 5DFN

Package: 8-PowerTDFN, 5 Leads

Stock14,742
STD5NK40Z-1
STMicroelectronics

MOSFET N-CH 400V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock601,020
FDI045N10A-F102
onsemi

MOSFET N-CH 100V 120A I2PAK

Package: -

Stock471
NVTFS6H854NLWFTAG
onsemi

MOSFET N-CH 80V 10A/41A 8WDFN

Package: -

Stock4,482

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP80N06S2L-11	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,544	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 93µA	80nC @ 10V	2650pF @ 25V	±20V	-	158W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFSL23N15DPBF	Infineon Technologies	MOSFET N-CH 150V 23A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,096	MOSFET (Metal Oxide)	150V	23A (Tc)	10V	5.5V @ 250µA	56nC @ 10V	1200pF @ 25V	±30V	-	3.8W (Ta), 136W (Tc)	90 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
2SK4196LS-1E	ON Semiconductor	MOSFET N-CH 500V 5.5A TO-220FI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3	Package: TO-220-3	Stock3,904	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	-	14.6nC @ 10V	360pF @ 30V	±30V	-	2W (Ta), 30W (Tc)	1.56 Ohm @ 2.8A, 10V	150°C (TJ)	Through Hole	TO-220F-3FS	TO-220-3
GP1M009A060FH	Global Power Technologies Group	MOSFET N-CH 600V 9A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51.4W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,608	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	27nC @ 10V	1440pF @ 25V	±30V	-	51.4W (Tc)	1 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTS4172NT1G	ON Semiconductor	MOSFET N-CH 30V 1.6A SC70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 294mW (Ta) Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock552,012	MOSFET (Metal Oxide)	30V	1.6A (Ta)	2.5V, 10V	1.4V @ 250µA	4.38nC @ 4.5V	381pF @ 15V	±12V	-	294mW (Ta)	93 mOhm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
ZVNL120CSTOB	Diodes Incorporated	MOSFET N-CH 200V 0.18A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 5V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock3,168	MOSFET (Metal Oxide)	200V	180mA (Ta)	3V, 5V	1.5V @ 1mA	-	85pF @ 25V	±20V	-	700mW (Ta)	10 Ohm @ 250mA, 5V	-	Through Hole	E-Line (TO-92 compatible)	E-Line-3
BSP612PH6327XTSA1	Infineon Technologies	SMALL SIGNAL+P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CWDM305P TR13	Central Semiconductor Corp	MOSFET P-CH 16V 5.3A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Vgs (Max): 16V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,216	MOSFET (Metal Oxide)	30V	5.3A (Ta)	5V, 10V	3V @ 250µA	7nC @ 5V	590pF @ 10V	16V	-	2W (Ta)	72 mOhm @ 2.7A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FM6L52020L	Panasonic Electronic Components	MOSFET N-CH 20V 2.2A MINI6-F1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock7,792	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.5V, 4V	1.3V @ 1mA	-	280pF @ 10V	±10V	-	540mW (Ta)	105 mOhm @ 1A, 4V	125°C (TJ)	Surface Mount	WSSMini6-F1	6-SMD, Flat Leads
CPH3448-TL-W	ON Semiconductor	MOSFET N-CH 30V 4A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,936	MOSFET (Metal Oxide)	30V	4A (Ta)	1.8V, 4.5V	-	4.7nC @ 4.5V	430pF @ 10V	±12V	-	1W (Ta)	50 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
TSM10N80CZ C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,664	MOSFET (Metal Oxide)	800V	9.5A (Tc)	10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	±30V	-	48W (Tc)	1.05 Ohm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FQP8N90C	Fairchild/ON Semiconductor	MOSFET N-CH 900V 6.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock110,496	MOSFET (Metal Oxide)	900V	6.3A (Tc)	10V	5V @ 250µA	45nC @ 10V	2080pF @ 25V	±30V	-	171W (Tc)	1.9 Ohm @ 3.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDB8447L	Fairchild/ON Semiconductor	MOSFET N-CH 40V 15A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock56,196	MOSFET (Metal Oxide)	40V	15A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	52nC @ 10V	2620pF @ 20V	±20V	-	3.1W (Ta), 60W (Tc)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SVD2955T4G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFPC50PBF	Vishay Siliconix	MOSFET N-CH 600V 11A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,840	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	140nC @ 10V	2700pF @ 25V	±20V	-	180W (Tc)	600 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SI8425DB-T1-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (1.6x1.6) Package / Case: 4-UFBGA, WLCSP	Package: 4-UFBGA, WLCSP	Stock720,000	MOSFET (Metal Oxide)	20V	-	1.8V, 4.5V	900mV @ 250µA	110nC @ 10V	2800pF @ 10V	±10V	-	1.1W (Ta), 2.7W (Tc)	23 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-WLCSP (1.6x1.6)	4-UFBGA, WLCSP
NVMFS5C404NLAFT1G	ON Semiconductor	MOSFET N-CH 40V 370A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 0.67 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock14,742	MOSFET (Metal Oxide)	40V	370A (Tc)	4.5V, 10V	2V @ 250µA	81nC @ 4.5V	12168pF @ 25V	±20V	-	200W (Tc)	0.67 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
STD5NK40Z-1	STMicroelectronics	MOSFET N-CH 400V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock601,020	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	305pF @ 25V	±30V	-	45W (Tc)	1.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDI045N10A-F102	onsemi	MOSFET N-CH 100V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Stock471	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4V @ 250µA	74 nC @ 10 V	5270 pF @ 50 V	±20V	-	263W (Tc)	4.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
NVTFS6H854NLWFTAG	onsemi	MOSFET N-CH 80V 10A/41A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,482	MOSFET (Metal Oxide)	80 V	10A (Ta), 41A (Tc)	4.5V, 10V	2V @ 45µA	17 nC @ 10 V	902 pF @ 40 V	±20V	-	3.2W (Ta), 54W (Tc)	13.4mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
AOD2NL60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2A TO252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOT12N60FDL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4V @ 250µA	50 nC @ 10 V	2010 pF @ 25 V	±30V	-	278W (Tc)	650mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NVD6824NLT4G	onsemi	MOSFET N-CH 100V 8.5A/41A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	8.5A (Ta), 41A (Tc)	4.5V, 10V	2.5V @ 250µA	66 nC @ 10 V	3468 pF @ 25 V	±20V	-	3.9W (Ta), 90W (Tc)	20mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
UPA2734GR-E1-AT	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP31D1UQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	620mA (Ta)	1.8V, 4.5V	1.1V @ 250µA	1.6 nC @ 8 V	54 pF @ 15 V	±8V	-	460mW (Ta)	1Ohm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTLJS7D2P02P8ZTAG	onsemi	MOSFET P-CH 20V 7.9A 6PQFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerWDFN	Package: -	Stock73,929	MOSFET (Metal Oxide)	20 V	7.9A (Ta)	2.5V, 4.5V	1.5V @ 250µA	26.7 nC @ 4.5 V	2790 pF @ 10 V	±8V	-	860mW (Ta)	9mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-PQFN (2x2)	6-PowerWDFN
IRFW710BTM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	4V @ 250µA	10 nC @ 10 V	330 pF @ 25 V	±30V	-	3.13W (Ta), 36W (Tc)	3.4Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NX5008NBKMYL	Nexperia USA Inc.	MOSFET N-CH 50V 350MA DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-883 Package / Case: SC-101, SOT-883	Package: -	Stock93,369	MOSFET (Metal Oxide)	50 V	350mA (Ta)	-	900mV @ 250µA	0.7 nC @ 4.5 V	29 pF @ 25 V	±8V	-	350mW (Ta), 2.8W (Tc)	2.8Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-883	SC-101, SOT-883