Page 121 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRGS4620DPBF
Infineon Technologies

IGBT 600V 32A 140W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,808
IRGP4266-EPBF
Infineon Technologies

IGBT 650V 140A 450W TO247AD

Package: TO-247-3

Stock2,960
IRGI4045DPBF
Infineon Technologies

IGBT 600V 11A 33W TO220ABFP

Package: TO-220-3 Full Pack

Stock15,012
IXGQ50N60C4D1
IXYS

IGBT 600V 90A 300W TO3P

Package: TO-3P-3, SC-65-3

Stock7,408
IXSR50N60B
IXYS

IGBT 600V ISOPLUS247

Package: ISOPLUS247?

Stock7,152
IXGT24N60CD1
IXYS

IGBT 600V 48A 150W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,000
GT10J312(Q)
Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,992
APT13GP120KG
Microsemi Corporation

IGBT 1200V 41A 250W TO220

Package: TO-220-3

Stock3,264
IKQ50N120CH3XKSA1
Infineon Technologies

IGBT HS SW 1200V 50A TO-247-3

Package: TO-247-3

Stock5,584
IXBF20N300
IXYS

IGBT 3000V 34A 150W ISOPLUSI4

Package: i4-Pac?-5 (3 leads)

Stock3,712
IXGX32N170AH1
IXYS

IGBT 1700V 32A 350W PLUS247

Package: TO-247-3

Stock4,448
IXGR40N120B2D1
IXYS

IGBT 1200V ISOPLUS247

Package: ISOPLUS247?

Stock4,240
IXGP30N60C3D4
IXYS

IGBT 600V 60A 220W TO220AB

Package: TO-220-3

Stock3,712
IXGQ170N30PB
IXYS

IGBT 300V 170A 330W TO3P

Package: TO-3P-3, SC-65-3

Stock4,080
IKW20N60H3FKSA1
Infineon Technologies

IGBT 600V 40A 170W TO247-3

Package: TO-247-3

Stock4,704
FGH20N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

Package: TO-247-3

Stock151,332
IKQ100N60TXKSA1
Infineon Technologies

IGBT 600V TO247-3

Package: TO-247-3

Stock7,224
IHW20N135R5XKSA1
Infineon Technologies

IGBT 1350V 40A 288W TO247

Package: TO-247-3

Stock7,884
STGW35HF60W
STMicroelectronics

IGBT 600V 60A 200W TO247

Package: TO-247-3

Stock390,000
PCFG75T65SQF
onsemi

IGBT FIELD STOP 650V WAFER

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGS4620DPBF	Infineon Technologies	IGBT 600V 32A 140W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,808	600V	32A	36A	1.85V @ 15V, 12A	140W	75µJ (on), 225µJ (off)	Standard	25nC	31ns/83ns	400V, 12A, 22 Ohm, 15V	68ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGP4266-EPBF	Infineon Technologies	IGBT 650V 140A 450W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 450W Switching Energy: 3.2mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 80ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock2,960	650V	140A	300A	2.1V @ 15V, 75A	450W	3.2mJ (on), 1.7mJ (off)	Standard	210nC	80ns/200ns	400V, 75A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRGI4045DPBF	Infineon Technologies	IGBT 600V 11A 33W TO220ABFP IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 33W Switching Energy: 64µJ (on), 123µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 26ns/73ns Test Condition: 400V, 6A, 47 Ohm, 15V Reverse Recovery Time (trr): 73ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	Package: TO-220-3 Full Pack	Stock15,012	600V	11A	18A	2V @ 15V, 6A	33W	64µJ (on), 123µJ (off)	Standard	13nC	26ns/73ns	400V, 6A, 47 Ohm, 15V	73ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IXGQ50N60C4D1	IXYS	IGBT 600V 90A 300W TO3P IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Power - Max: 300W Switching Energy: 950µJ (on), 840µJ (off) Input Type: Standard Gate Charge: 113nC Td (on/off) @ 25°C: 40ns/270ns Test Condition: 400V, 36A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock7,408	600V	90A	220A	2.3V @ 15V, 36A	300W	950µJ (on), 840µJ (off)	Standard	113nC	40ns/270ns	400V, 36A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IXSR50N60B	IXYS	IGBT 600V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	Package: ISOPLUS247?	Stock7,152	600V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXGT24N60CD1	IXYS	IGBT 600V 48A 150W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 240µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,000	600V	48A	80A	2.5V @ 15V, 24A	150W	240µJ (off)	Standard	55nC	15ns/75ns	480V, 24A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
GT10J312(Q)	Toshiba Semiconductor and Storage	IGBT 600V 10A 60W TO220SM IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 60W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 400ns/400ns Test Condition: 300V, 10A, 100 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,992	600V	10A	20A	2.7V @ 15V, 10A	60W	-	Standard	-	400ns/400ns	300V, 10A, 100 Ohm, 15V	200ns	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-220SM
APT13GP120KG	Microsemi Corporation	IGBT 1200V 41A 250W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 114µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	Package: TO-220-3	Stock3,264	1200V	41A	50A	3.9V @ 15V, 13A	250W	114µJ (on), 165µJ (off)	Standard	55nC	9ns/28ns	600V, 13A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
IKQ50N120CH3XKSA1	Infineon Technologies	IGBT HS SW 1200V 50A TO-247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A Power - Max: 652W Switching Energy: 3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 34ns/297ns Test Condition: 600V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	Package: TO-247-3	Stock5,584	1200V	100A	200A	2.35V @ 15V, 50A	652W	3mJ (on), 1.9mJ (off)	Standard	235nC	34ns/297ns	600V, 50A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
IXBF20N300	IXYS	IGBT 3000V 34A 150W ISOPLUSI4 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Power - Max: 150W Switching Energy: - Input Type: Standard Gate Charge: 105nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.35µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5 (3 leads)	Stock3,712	3000V	34A	150A	3.2V @ 15V, 20A	150W	-	Standard	105nC	-	-	1.35µs	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5 (3 leads)	ISOPLUS i4-PAC?
IXGX32N170AH1	IXYS	IGBT 1700V 32A 350W PLUS247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A Power - Max: 350W Switching Energy: 4.1mJ (on), 1.25mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 27ns/270ns Test Condition: 850V, 32A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	Package: TO-247-3	Stock4,448	1700V	32A	110A	5V @ 15V, 21A	350W	4.1mJ (on), 1.25mJ (off)	Standard	157nC	27ns/270ns	850V, 32A, 2.7 Ohm, 15V	150ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXGR40N120B2D1	IXYS	IGBT 1200V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	Package: ISOPLUS247?	Stock4,240	1200V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXGP30N60C3D4	IXYS	IGBT 600V 60A 220W TO220AB IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 220W Switching Energy: 270µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 16ns/42ns Test Condition: 300V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock3,712	600V	60A	150A	3V @ 15V, 20A	220W	270µJ (on), 90µJ (off)	Standard	38nC	16ns/42ns	300V, 20A, 5 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGQ170N30PB	IXYS	IGBT 300V 170A 330W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 170A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A Power - Max: 330W Switching Energy: - Input Type: Standard Gate Charge: 143nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock4,080	300V	170A	-	1.7V @ 15V, 85A	330W	-	Standard	143nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IKW20N60H3FKSA1	Infineon Technologies	IGBT 600V 40A 170W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 170W Switching Energy: 800µJ Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 17ns/194ns Test Condition: 400V, 20A, 14.6 Ohm, 15V Reverse Recovery Time (trr): 112ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock4,704	600V	40A	80A	2.4V @ 15V, 20A	170W	800µJ	Standard	120nC	17ns/194ns	400V, 20A, 14.6 Ohm, 15V	112ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
FGH20N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 40A 165W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 165W Switching Energy: 380µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 13ns/87ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock151,332	600V	40A	60A	2.4V @ 15V, 20A	165W	380µJ (on), 260µJ (off)	Standard	63nC	13ns/87ns	400V, 20A, 10 Ohm, 15V	34ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IKQ100N60TXKSA1	Infineon Technologies	IGBT 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 714W Switching Energy: 3.1mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 610nC Td (on/off) @ 25°C: 30ns/290ns Test Condition: 400V, 100A, 3.6 Ohm, 15V Reverse Recovery Time (trr): 230ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	Package: TO-247-3	Stock7,224	600V	160A	400A	2V @ 15V, 100A	714W	3.1mJ (on), 2.5mJ (off)	Standard	610nC	30ns/290ns	400V, 100A, 3.6 Ohm, 15V	230ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
IHW20N135R5XKSA1	Infineon Technologies	IGBT 1350V 40A 288W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A Power - Max: 288W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: -/235ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock7,884	1350V	40A	60A	1.85V @ 15V, 20A	288W	950µJ (off)	Standard	170nC	-/235ns	600V, 20A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
STGW35HF60W	STMicroelectronics	IGBT 600V 60A 200W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 200W Switching Energy: 290µJ (on), 185µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 30ns/175ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock390,000	600V	60A	150A	2.5V @ 15V, 20A	200W	290µJ (on), 185µJ (off)	Standard	140nC	30ns/175ns	400V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
PCFG75T65SQF	onsemi	IGBT FIELD STOP 650V WAFER IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 128 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	Package: -	Request a Quote	650 V	-	300 A	2.1V @ 15V, 75A	-	-	Standard	128 nC	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Wafer
SIGC81T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 65ns/450ns Test Condition: 400V, 100A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	100 A	300 A	2.5V @ 15V, 100A	-	-	Standard	-	65ns/450ns	400V, 100A, 3.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SGF80N60UFTU-ON	onsemi	IGBT, 80A, 600V, N-CHANNEL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJP3047DPK-80-T2	Renesas Electronics Corporation	HIGH SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIKW75N60CTE8188XKSA1	Infineon Technologies	IGBT 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 428 W Switching Energy: 2mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 470 nC Td (on/off) @ 25°C: 33ns/330ns Test Condition: 400V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): 121 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-41	Package: -	Request a Quote	600 V	80 A	225 A	2V @ 15V, 75A	428 W	2mJ (on), 2.5mJ (off)	Standard	470 nC	33ns/330ns	400V, 75A, 5Ohm, 15V	121 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-41
IKWH30N65WR5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 75A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 190 W Switching Energy: 870µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 133 nC Td (on/off) @ 25°C: 41ns/398ns Test Condition: 400V, 30A, 27Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	Package: -	Stock504	650 V	75 A	90 A	1.7V @ 15V, 30A	190 W	870µJ (on), 400µJ (off)	Standard	133 nC	41ns/398ns	400V, 30A, 27Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
FGD3040G2-SN00353	onsemi	IGBT 400V 41A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 41 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 21 nC Td (on/off) @ 25°C: -/4.8µs Test Condition: 300V, 6.5A, 1kOhm, 5V Reverse Recovery Time (trr): 1.9 µs Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	400 V	41 A	-	1.25V @ 4V, 6A	150 W	-	Logic	21 nC	-/4.8µs	300V, 6.5A, 1kOhm, 5V	1.9 µs	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
STGW40H65DFB-4	STMicroelectronics	IGBT IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 283 W Switching Energy: 200µJ (on), 410µJ (off) Input Type: Standard Gate Charge: 210 nC Td (on/off) @ 25°C: 40ns/142ns Test Condition: 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 62 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4	Package: -	Stock1,800	650 V	80 A	160 A	2V @ 15V, 40A	283 W	200µJ (on), 410µJ (off)	Standard	210 nC	40ns/142ns	400V, 40A, 5Ohm, 15V	62 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
RJH3047DPK-80-T2	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-