Page 122 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IGP03N120H2XKSA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO220-3

Package: TO-220-3

Stock7,888
IRG4BC30FD-S
Infineon Technologies

IGBT 600V 31A 100W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock240,000
TIG052TS-TL-E
ON Semiconductor

IGBT 400V 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock311,040
IXGA16N60B2
IXYS

IGBT 600V 40A 150W TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,360
FGB30N6S2
Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,216
FGH40N6S2
Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO247

Package: TO-247-3

Stock103,464
IKW50N65F5AXKSA1
Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

Package: TO-247-3

Stock3,600
IRG4BC20KDSTRRP
Infineon Technologies

IGBT 600V 16A 60W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,792
IXBF42N300
IXYS

IGBT 3000V TO247

Package: i4-Pac?-4, Isolated

Stock4,848
IXBT12N300HV
IXYS

IGBT 3000V 30A 160W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,144
IXGR72N60C3D1
IXYS

IGBT 600V 75A 200W ISOPLUS247

Package: ISOPLUS247?

Stock7,216
IXGH12N100
IXYS

IGBT 1000V 24A 100W TO247AD

Package: TO-247-3

Stock3,904
APT70GR65B
Microsemi Corporation

IGBT 650V 134A 595W TO-247

Package: TO-247-3

Stock7,040
IRG4BC20KDPBF
Infineon Technologies

IGBT 600V 16A 60W TO220AB

Package: TO-220-3

Stock59,460
STGW60H65DRF
STMicroelectronics

IGBT 650V 120A 420W TO247

Package: TO-247-3

Stock12,432
STGFW80V60F
STMicroelectronics

IGBT 600V 120A 79W TO-3PF

Package: TO-3P-3 Full Pack

Stock6,528
STGWT60V60DF
STMicroelectronics

IGBT 600V 80A 375W TO3P

Package: TO-3P-3, SC-65-3

Stock5,328
FGH40T100SMD_F155
Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3

Package: TO-247-3

Stock7,476
IKW30N60DTPXKSA1
Infineon Technologies

IGBT 600V 53A 200W TO247

Package: TO-247-3

Stock7,896
SIGC12T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IGP03N120H2XKSA1	Infineon Technologies	IGBT 1200V 9.6A 62.5W TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290µJ Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25°C: 9.2ns/281ns Test Condition: 800V, 3A, 82 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	Package: TO-220-3	Stock7,888	1200V	9.6A	9.9A	2.8V @ 15V, 3A	62.5W	290µJ	Standard	22nC	9.2ns/281ns	800V, 3A, 82 Ohm, 15V	-	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	PG-TO220-3
IRG4BC30FD-S	Infineon Technologies	IGBT 600V 31A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock240,000	600V	31A	120A	1.8V @ 15V, 17A	100W	630µJ (on), 1.39mJ (off)	Standard	51nC	42ns/230ns	480V, 17A, 23 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
TIG052TS-TL-E	ON Semiconductor	IGBT 400V 8TSSOP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 5.5V @ 2.5V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock311,040	400V	-	150A	5.5V @ 2.5V, 150A	-	-	Standard	-	-	-	-	150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IXGA16N60B2	IXYS	IGBT 600V 40A 150W TO263 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Power - Max: 150W Switching Energy: 160µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 18ns/73ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,360	600V	40A	100A	1.95V @ 15V, 12A	150W	160µJ (on), 120µJ (off)	Standard	24nC	18ns/73ns	400V, 12A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
FGB30N6S2	Fairchild/ON Semiconductor	IGBT 600V 45A 167W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 108A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: 6ns/40ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,216	600V	45A	108A	2.5V @ 15V, 12A	167W	55µJ (on), 100µJ (off)	Standard	23nC	6ns/40ns	390V, 12A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
FGH40N6S2	Fairchild/ON Semiconductor	IGBT 600V 75A 290W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 115µJ (on), 195µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 8ns/35ns Test Condition: 390V, 20A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock103,464	600V	75A	180A	2.7V @ 15V, 20A	290W	115µJ (on), 195µJ (off)	Standard	35nC	8ns/35ns	390V, 20A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IKW50N65F5AXKSA1	Infineon Technologies	IGBT 650V 80A 305W PG-TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 270W Switching Energy: 490µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 108nC Td (on/off) @ 25°C: 21ns/156ns Test Condition: 400V, 25A, 12 Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock3,600	650V	80A	150A	2.1V @ 15V, 50A	270W	490µJ (on), 140µJ (off)	Standard	108nC	21ns/156ns	400V, 25A, 12 Ohm, 15V	77ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRG4BC20KDSTRRP	Infineon Technologies	IGBT 600V 16A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,792	600V	16A	32A	2.8V @ 15V, 9A	60W	340µJ (on), 300µJ (off)	Standard	34nC	54ns/180ns	480V, 9A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IXBF42N300	IXYS	IGBT 3000V TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 380A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A Power - Max: 240W Switching Energy: - Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 72ns/445ns Test Condition: 1500V, 42A, 20 Ohm, 15V Reverse Recovery Time (trr): 1.7µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-4, Isolated Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-4, Isolated	Stock4,848	3000V	60A	380A	3V @ 15V, 42A	240W	-	Standard	200nC	72ns/445ns	1500V, 42A, 20 Ohm, 15V	1.7µs	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-4, Isolated	ISOPLUS i4-PAC?
IXBT12N300HV	IXYS	IGBT 3000V 30A 160W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 64ns/180ns Test Condition: 1250V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 1.4µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,144	3000V	30A	100A	3.2V @ 15V, 12A	160W	-	Standard	62nC	64ns/180ns	1250V, 12A, 10 Ohm, 15V	1.4µs	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGR72N60C3D1	IXYS	IGBT 600V 75A 200W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 200W Switching Energy: 1.03mJ (on), 480µJ (off) Input Type: Standard Gate Charge: 175nC Td (on/off) @ 25°C: 27ns/77ns Test Condition: 480V, 50A, 2 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	Package: ISOPLUS247?	Stock7,216	600V	75A	400A	2.7V @ 15V, 50A	200W	1.03mJ (on), 480µJ (off)	Standard	175nC	27ns/77ns	480V, 50A, 2 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXGH12N100	IXYS	IGBT 1000V 24A 100W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Power - Max: 100W Switching Energy: 2.5mJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 100ns/850ns Test Condition: 800V, 12A, 120 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock3,904	1000V	24A	48A	3.5V @ 15V, 12A	100W	2.5mJ (off)	Standard	65nC	100ns/850ns	800V, 12A, 120 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
APT70GR65B	Microsemi Corporation	IGBT 650V 134A 595W TO-247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 260A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Power - Max: 595W Switching Energy: 1.51mJ (on), 1.46mJ (off) Input Type: Standard Gate Charge: 305nC Td (on/off) @ 25°C: 19ns/170ns Test Condition: 433V, 70A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock7,040	650V	134A	260A	2.4V @ 15V, 70A	595W	1.51mJ (on), 1.46mJ (off)	Standard	305nC	19ns/170ns	433V, 70A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IRG4BC20KDPBF	Infineon Technologies	IGBT 600V 16A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Power - Max: 60W Switching Energy: 340µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: 54ns/180ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock59,460	600V	16A	32A	2.8V @ 15V, 9A	60W	340µJ (on), 300µJ (off)	Standard	34nC	54ns/180ns	480V, 9A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGW60H65DRF	STMicroelectronics	IGBT 650V 120A 420W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Power - Max: 420W Switching Energy: 940µJ (on), 1.06mJ (off) Input Type: Standard Gate Charge: 217nC Td (on/off) @ 25°C: 85ns/178ns Test Condition: 400V, 60A, 10 Ohm, 15V Reverse Recovery Time (trr): 19ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock12,432	650V	120A	240A	2.4V @ 15V, 60A	420W	940µJ (on), 1.06mJ (off)	Standard	217nC	85ns/178ns	400V, 60A, 10 Ohm, 15V	19ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
STGFW80V60F	STMicroelectronics	IGBT 600V 120A 79W TO-3PF IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Power - Max: 79W Switching Energy: 1.8mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 448nC Td (on/off) @ 25°C: 60ns/220ns Test Condition: 400V, 80A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	Package: TO-3P-3 Full Pack	Stock6,528	600V	120A	240A	2.3V @ 15V, 80A	79W	1.8mJ (on), 1mJ (off)	Standard	448nC	60ns/220ns	400V, 80A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF
STGWT60V60DF	STMicroelectronics	IGBT 600V 80A 375W TO3P IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 375W Switching Energy: 750µJ (on), 550µJ (off) Input Type: Standard Gate Charge: 334nC Td (on/off) @ 25°C: 60ns/208ns Test Condition: 400V, 60A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: -	Package: TO-3P-3, SC-65-3	Stock5,328	600V	80A	240A	2.3V @ 15V, 60A	375W	750µJ (on), 550µJ (off)	Standard	334nC	60ns/208ns	400V, 60A, 4.7 Ohm, 15V	74ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	-
FGH40T100SMD_F155	Fairchild/ON Semiconductor	IGBT 1000V 80A 333W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 333W Switching Energy: 2.35mJ (on), 1.15mJ (off) Input Type: Standard Gate Charge: 398nC Td (on/off) @ 25°C: 29ns/285ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 78ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock7,476	1000V	80A	120A	2.3V @ 15V, 40A	333W	2.35mJ (on), 1.15mJ (off)	Standard	398nC	29ns/285ns	600V, 40A, 10 Ohm, 15V	78ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IKW30N60DTPXKSA1	Infineon Technologies	IGBT 600V 53A 200W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 53A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 200W Switching Energy: 710µJ (on), 420µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 15ns/179ns Test Condition: 400V, 30A, 10.5 Ohm, 15V Reverse Recovery Time (trr): 76ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock7,896	600V	53A	90A	1.8V @ 15V, 30A	200W	710µJ (on), 420µJ (off)	Standard	130nC	15ns/179ns	400V, 30A, 10.5 Ohm, 15V	76ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
SIGC12T60NCX1SA5	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	21ns/110ns	300V, 10A, 27Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
LGB18N40ATH	Littelfuse Inc.	IGBT 430V 18A TO263 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430 V Current - Collector (Ic) (Max): 18 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: - Power - Max: 115 W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: 0.7µs/4µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	Package: -	Request a Quote	430 V	18 A	50 A	-	115 W	-	Logic	-	0.7µs/4µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
FGD3325G2-F085V	onsemi	ECOSPARK 2 330MJ, 250V, N IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 41 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 21 nC Td (on/off) @ 25°C: 800ns/5.1µs Test Condition: 5V, 1kOhm Reverse Recovery Time (trr): 1.2 µs Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	Package: -	Stock11,793	250 V	41 A	-	1.25V @ 4V, 6A	150 W	-	Logic	21 nC	800ns/5.1µs	5V, 1kOhm	1.2 µs	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA
SIGC25T60UNX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 16ns/122ns Test Condition: 400V, 30A, 1.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	30 A	90 A	3.15V @ 15V, 30A	-	-	Standard	-	16ns/122ns	400V, 30A, 1.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGC50B60KB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	50 A	-	1.35V @ 15V, 10A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IXYK110N120B4	IXYS	IGBT 1200V 110A GEN4 XPT TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 340 A Current - Collector Pulsed (Icm): 800 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Power - Max: 1360 W Switching Energy: 3.6mJ (on), 3.85mJ (off) Input Type: Standard Gate Charge: 340 nC Td (on/off) @ 25°C: 45ns/390ns Test Condition: 600V, 50A, 2Ohm, 15V Reverse Recovery Time (trr): 50 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXYK)	Package: -	Stock39	1200 V	340 A	800 A	2.1V @ 15V, 110A	1360 W	3.6mJ (on), 3.85mJ (off)	Standard	340 nC	45ns/390ns	600V, 50A, 2Ohm, 15V	50 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXYK)
RGWSX2TS65DGC13	Rohm Semiconductor	IGBT TRENCH FS 650V 104A TO247G IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 104 A Current - Collector Pulsed (Icm): 180 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 288 W Switching Energy: 1.43mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 140 nC Td (on/off) @ 25°C: 55ns/180ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): 88 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247G	Package: -	Stock1,800	650 V	104 A	180 A	2V @ 15V, 60A	288 W	1.43mJ (on), 1.2mJ (off)	Standard	140 nC	55ns/180ns	400V, 60A, 10Ohm, 15V	88 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247G
IXYQ30N65B3D1	IXYS	IGBT PT 650V 70A TO3P IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 270 W Switching Energy: 830µJ (on), 640µJ (off) Input Type: Standard Gate Charge: 45 nC Td (on/off) @ 25°C: 17ns/87ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 38 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: -	Request a Quote	650 V	70 A	160 A	2.1V @ 15V, 30A	270 W	830µJ (on), 640µJ (off)	Standard	45 nC	17ns/87ns	400V, 30A, 10Ohm, 15V	38 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
NCG225L75NF8M1	onsemi	IGBT 750V 225A FS4 DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector (Ic) (Max): 225 A Current - Collector Pulsed (Icm): 675 A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 200A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 690 nC Td (on/off) @ 25°C: 104ns/122ns Test Condition: 400V, 225A, 2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	Package: -	Request a Quote	750 V	225 A	675 A	1.75V @ 15V, 200A	-	-	Standard	690 nC	104ns/122ns	400V, 225A, 2Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Wafer