Page 30 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG8P75N65UD1PBF
Infineon Technologies

G8 650V 75A CO-PAK-247

Package: -

Stock4,496
NGTB15N120IHLWG
ON Semiconductor

IGBT 1200V 30A 156W TO247-3

Package: TO-247-3

Stock4,432
NGD8201NT4G
ON Semiconductor

IGBT 440V 20A 125W DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock337,416
IXSH25N120A
IXYS

IGBT 1200V 50A 200W TO247AD

Package: TO-247-3

Stock5,280
IXGT30N60C2
IXYS

IGBT 600V 70A 190W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,424
FGPF70N30
Fairchild/ON Semiconductor

IGBT 300V 52W TO220F

Package: TO-220-3 Full Pack

Stock103,464
IRG4PC30KPBF
Infineon Technologies

IGBT 600V 28A 100W TO247AC

Package: TO-247-3

Stock18,000
IRG7CH30K10EF
Infineon Technologies

IGBT CHIP WAFER

Package: Die

Stock2,288
IKD10N60RAATMA2
Infineon Technologies

IGBT 600V 20A 150W TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,912
APT44GA60BD30
Microsemi Corporation

IGBT 600V 78A 337W TO-247

Package: TO-247-3

Stock4,560
IXGA15N100C
IXYS

IGBT 1000V 30A 150W TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,136
IXYH75N65C3
IXYS

IGBT 650V 170A 750W TO247

Package: TO-247-3

Stock3,616
GPA030A135MN-FDR
Global Power Technologies Group

IGBT 1350V 60A 329W TO3PN

Package: TO-3

Stock2,352
IXXK100N60B3H1
IXYS

IGBT 600V 200A 695W TO264

Package: TO-264-3, TO-264AA Variation

Stock6,608
FGH40T65UPD
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-247AB

Package: TO-247-3

Stock103,464
AOB10B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 10A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,120
FGPF10N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 20A 42W TO-220F

Package: TO-220-3 Full Pack

Stock103,704
SGP23N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 23A 100W TO220-3

Package: TO-220-3

Stock73,080
STGP14NC60KD
STMicroelectronics

IGBT 600V 25A 80W TO220

Package: TO-220-3

Stock274,164
IRGP4640PBF
Infineon Technologies

IGBT 600V 65A 250W TO247AC

Package: TO-247-3

Stock7,620

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG8P75N65UD1PBF	Infineon Technologies	G8 650V 75A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock4,496	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGTB15N120IHLWG	ON Semiconductor	IGBT 1200V 30A 156W TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 156W Switching Energy: 560µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: -/165ns Test Condition: 600V, 15A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock4,432	1200V	30A	120A	2.2V @ 15V, 15A	156W	560µJ (off)	Standard	160nC	-/165ns	600V, 15A, 15 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGD8201NT4G	ON Semiconductor	IGBT 440V 20A 125W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 440V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A Power - Max: 125W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: -/5µs Test Condition: 300V, 9A, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock337,416	440V	20A	50A	1.9V @ 4.5V, 20A	125W	-	Logic	-	-/5µs	300V, 9A, 1 kOhm, 5V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
IXSH25N120A	IXYS	IGBT 1200V 50A 200W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Power - Max: 200W Switching Energy: 9.6mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 100ns/450ns Test Condition: 960V, 25A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	Package: TO-247-3	Stock5,280	1200V	50A	80A	4V @ 15V, 25A	200W	9.6mJ (off)	Standard	120nC	100ns/450ns	960V, 25A, 18 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXSH)
IXGT30N60C2	IXYS	IGBT 600V 70A 190W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Power - Max: 190W Switching Energy: 290µJ (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 13ns/70ns Test Condition: 400V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,424	600V	70A	150A	2.7V @ 15V, 24A	190W	290µJ (off)	Standard	70nC	13ns/70ns	400V, 24A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
FGPF70N30	Fairchild/ON Semiconductor	IGBT 300V 52W TO220F IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A Power - Max: 52W Switching Energy: - Input Type: Standard Gate Charge: 71nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	Package: TO-220-3 Full Pack	Stock103,464	300V	-	160A	1.5V @ 15V, 20A	52W	-	Standard	71nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
IRG4PC30KPBF	Infineon Technologies	IGBT 600V 28A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock18,000	600V	28A	58A	2.7V @ 15V, 16A	100W	360µJ (on), 510µJ (off)	Standard	67nC	26ns/130ns	480V, 16A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG7CH30K10EF	Infineon Technologies	IGBT CHIP WAFER IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.56V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 4.8nC Td (on/off) @ 25°C: 10ns/90ns Test Condition: 600V, 10A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock2,288	1200V	10A	-	2.56V @ 15V, 10A	-	-	Standard	4.8nC	10ns/90ns	600V, 10A, 22 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IKD10N60RAATMA2	Infineon Technologies	IGBT 600V 20A 150W TO252-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 150W Switching Energy: - Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 14ns/192ns Test Condition: 400V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,912	600V	20A	30A	2.1V @ 15V, 10A	150W	-	Standard	64nC	14ns/192ns	400V, 10A, 23 Ohm, 15V	62ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
APT44GA60BD30	Microsemi Corporation	IGBT 600V 78A 337W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 258µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/84ns Test Condition: 400V, 26A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock4,560	600V	78A	130A	2.5V @ 15V, 26A	337W	409µJ (on), 258µJ (off)	Standard	128nC	16ns/84ns	400V, 26A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IXGA15N100C	IXYS	IGBT 1000V 30A 150W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A Power - Max: 150W Switching Energy: 850µJ (off) Input Type: Standard Gate Charge: 73nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 960V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,136	1000V	30A	60A	3.5V @ 15V, 15A	150W	850µJ (off)	Standard	73nC	25ns/150ns	960V, 15A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
IXYH75N65C3	IXYS	IGBT 650V 170A 750W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 170A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 750W Switching Energy: 2.8mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 123nC Td (on/off) @ 25°C: 27ns/93ns Test Condition: 400V, 60A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	Package: TO-247-3	Stock3,616	650V	170A	360A	2.3V @ 15V, 60A	750W	2.8mJ (on), 1mJ (off)	Standard	123nC	27ns/93ns	400V, 60A, 3 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
GPA030A135MN-FDR	Global Power Technologies Group	IGBT 1350V 60A 329W TO3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 329W Switching Energy: 4.4mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 300nC Td (on/off) @ 25°C: 30ns/145ns Test Condition: 600V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): 450ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	Package: TO-3	Stock2,352	1350V	60A	90A	2.4V @ 15V, 30A	329W	4.4mJ (on), 1.18mJ (off)	Standard	300nC	30ns/145ns	600V, 30A, 5 Ohm, 15V	450ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-3PN
IXXK100N60B3H1	IXYS	IGBT 600V 200A 695W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 440A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Power - Max: 695W Switching Energy: 1.9mJ (on), 2mJ (off) Input Type: Standard Gate Charge: 143nC Td (on/off) @ 25°C: 30ns/120ns Test Condition: 360V, 70A, 2 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Variation Supplier Device Package: TO-264 (IXXK)	Package: TO-264-3, TO-264AA Variation	Stock6,608	600V	200A	440A	1.8V @ 15V, 70A	695W	1.9mJ (on), 2mJ (off)	Standard	143nC	30ns/120ns	360V, 70A, 2 Ohm, 15V	140ns	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA Variation	TO-264 (IXXK)
FGH40T65UPD	Fairchild/ON Semiconductor	IGBT 650V 80A 268W TO-247AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 268W Switching Energy: 1.59mJ (on), 580µJ (off) Input Type: Standard Gate Charge: 177nC Td (on/off) @ 25°C: 20ns/144ns Test Condition: 400V, 40A, 7 Ohm, 15V Reverse Recovery Time (trr): 43ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock103,464	650V	80A	120A	2.3V @ 15V, 40A	268W	1.59mJ (on), 580µJ (off)	Standard	177nC	20ns/144ns	400V, 40A, 7 Ohm, 15V	43ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
AOB10B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO263 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 150W Switching Energy: 180µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 12ns/91ns Test Condition: 400V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 262ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,120	650V	20A	30A	2V @ 15V, 10A	150W	180µJ (on), 130µJ (off)	Standard	24nC	12ns/91ns	400V, 10A, 30 Ohm, 15V	262ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)
FGPF10N60UNDF	Fairchild/ON Semiconductor	IGBT 600V 20A 42W TO-220F IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A Power - Max: 42W Switching Energy: 150µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 8ns/52.2ns Test Condition: 400V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): 37.7ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3	Package: TO-220-3 Full Pack	Stock103,704	600V	20A	30A	2.45V @ 15V, 10A	42W	150µJ (on), 50µJ (off)	Standard	37nC	8ns/52.2ns	400V, 10A, 10 Ohm, 15V	37.7ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3
SGP23N60UFTU	Fairchild/ON Semiconductor	IGBT 600V 23A 100W TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A Power - Max: 100W Switching Energy: 115µJ (on), 135µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 17ns/60ns Test Condition: 300V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	Package: TO-220-3	Stock73,080	600V	23A	92A	2.6V @ 15V, 12A	100W	115µJ (on), 135µJ (off)	Standard	-	17ns/60ns	300V, 12A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STGP14NC60KD	STMicroelectronics	IGBT 600V 25A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Power - Max: 80W Switching Energy: 82µJ (on), 155µJ (off) Input Type: Standard Gate Charge: 34.4nC Td (on/off) @ 25°C: 22.5ns/116ns Test Condition: 390V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock274,164	600V	25A	50A	2.5V @ 15V, 7A	80W	82µJ (on), 155µJ (off)	Standard	34.4nC	22.5ns/116ns	390V, 7A, 10 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IRGP4640PBF	Infineon Technologies	IGBT 600V 65A 250W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 100µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock7,620	600V	65A	72A	1.9V @ 15V, 24A	250W	100µJ (on), 600µJ (off)	Standard	75nC	40ns/105ns	400V, 24A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
NGTB40N65IHL2WG	ON Semiconductor	IGBT 650V 40A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 300W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: -/140ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 465ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock7,648	650V	80A	160A	2.2V @ 15V, 40A	300W	360µJ (off)	Standard	135nC	-/140ns	400V, 40A, 10 Ohm, 15V	465ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
FGB40T65SPD_F085	Fairchild/ON Semiconductor	IGBT FIELD STOP 650V 80A D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 267W Switching Energy: 970µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 36nC Td (on/off) @ 25°C: 18ns/35ns Test Condition: 400V, 40A, 6 Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,872	650V	80A	120A	2.4V @ 15V, 40A	267W	970µJ (on), 280µJ (off)	Standard	36nC	18ns/35ns	400V, 40A, 6 Ohm, 15V	34ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)
AOD8B65MQ1	Alpha & Omega Semiconductor Inc.	IGBT 8A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 16 A Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 8A Power - Max: 89 W Switching Energy: 160µJ (on), 110µJ (off) Input Type: Standard Gate Charge: 22 nC Td (on/off) @ 25°C: 8.5ns/102ns Test Condition: 400V, 8A, 37.5Ohm, 15V Reverse Recovery Time (trr): 94 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	650 V	16 A	24 A	2.25V @ 15V, 8A	89 W	160µJ (on), 110µJ (off)	Standard	22 nC	8.5ns/102ns	400V, 8A, 37.5Ohm, 15V	94 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
IKN06N60RC2ATMA1	Infineon Technologies	IGBT 600V 8A SOT223-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 8 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A Power - Max: 7.2 W Switching Energy: 151µJ (on), 104µJ (off) Input Type: Standard Gate Charge: 31 nC Td (on/off) @ 25°C: 8.8ns/174ns Test Condition: 400V, 6A, 49Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-3	Package: -	Stock17,028	600 V	8 A	18 A	2.3V @ 15V, 6A	7.2 W	151µJ (on), 104µJ (off)	Standard	31 nC	8.8ns/174ns	400V, 6A, 49Ohm, 15V	42 ns	-40°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-3
FGH40T65SHDF-F155	onsemi	IGBT FIELD STOP 650V 80A TO247-3 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Power - Max: 268 W Switching Energy: 1.22mJ (on), 440µJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr): 101 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: -	Stock1,029	650 V	80 A	120 A	1.81V @ 15V, 40A	268 W	1.22mJ (on), 440µJ (off)	Standard	68 nC	18ns/64ns	400V, 40A, 6Ohm, 15V	101 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRG4CC40FB	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	-	-	1.6V @ 15V, 10A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
RGS60TS65DHRC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 56A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 56 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 223 W Switching Energy: 660µJ (on), 810µJ (off) Input Type: Standard Gate Charge: 36 nC Td (on/off) @ 25°C: 28ns/104ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 103 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	Package: -	Stock1,350	650 V	56 A	90 A	2.1V @ 15V, 30A	223 W	660µJ (on), 810µJ (off)	Standard	36 nC	28ns/104ns	400V, 30A, 10Ohm, 15V	103 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
GT20J341-S4X-S	Toshiba Semiconductor and Storage	DISCRETE IGBT TRANSISTOR TO-220S IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 45 W Switching Energy: 500µJ (on), 400µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 60ns/240ns Test Condition: 300V, 20A, 33Ohm, 15V Reverse Recovery Time (trr): 90 ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS	Package: -	Stock84	600 V	20 A	80 A	2V @ 15V, 20A	45 W	500µJ (on), 400µJ (off)	Standard	-	60ns/240ns	300V, 20A, 33Ohm, 15V	90 ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS