Page 31 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG7CH75UED-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

Package: -

Stock4,240
IRG8P08N120KD-EPBF
Infineon Technologies

IGBT 1200V 15A 89W TO-247AD

Package: TO-247-3

Stock7,392
IRG6I320UPBF
Infineon Technologies

IGBT 330V 24A 39W TO220ABFP

Package: TO-220-3

Stock7,008
IRGS4055PBF
Infineon Technologies

IGBT 300V 110A 255W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,192
IRG4PH30KD
Infineon Technologies

IGBT 1200V 20A 100W TO247AC

Package: TO-247-3

Stock5,616
APT15GT60KRG
Microsemi Corporation

IGBT 600V 42A 184W TO220

Package: TO-220-3

Stock4,976
FGA40N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO3P

Package: TO-3P-3, SC-65-3

Stock7,584
IRGC4063B
Infineon Technologies

IGBT CHIP WAFER

Package: Die

Stock6,080
SGP07N120XKSA1
Infineon Technologies

IGBT 1200V 16.5A 125W TO220

Package: TO-220-3

Stock6,912
IRGR2B60KDTRPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,192
IXGT6N170AHV
IXYS

IGBT 1700V 6A 75W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,536
NGD8201BNT4G
Littelfuse Inc.

IGBT 400V 20A 125W DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,344
AOT15B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO220

Package: TO-220-3

Stock12,372
STGF10NB60SD
STMicroelectronics

IGBT 600V 23A 25W TO220FP

Package: TO-220-3 Full Pack

Stock14,124
AOTF10B65M2
Alpha & Omega Semiconductor Inc.

IGBT 650V 10A TO220

Package: TO-220-3

Stock14,676
FGA6530WDF
Fairchild/ON Semiconductor

IGBT 650V 60A 176W TO3PN

Package: TO-3P-3, SC-65-3

Stock9,192
ISL9V3036S3ST
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,800
NGTB20N135IHRWG
ON Semiconductor

IGBT 1350V 40A 394W TO247

Package: TO-247-3

Stock6,528
IHW30N135R3FKSA1
Infineon Technologies

IGBT 1350V 60A 349W TO247-3

Package: TO-247-3

Stock10,224
FGH30S130P
Fairchild/ON Semiconductor

IGBT 1300V 60A 500W TO-247AB

Package: TO-247-3

Stock8,184

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7CH75UED-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock4,240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8P08N120KD-EPBF	Infineon Technologies	IGBT 1200V 15A 89W TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock7,392	1200V	15A	15A	2V @ 15V, 5A	89W	300µJ (on), 300µJ (off)	Standard	45nC	20ns/160ns	600V, 5A, 47 Ohm, 15V	50ns	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRG6I320UPBF	Infineon Technologies	IGBT 330V 24A 39W TO220ABFP IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A Power - Max: 39W Switching Energy: - Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 24ns/89ns Test Condition: 196V, 12A, 10 Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock7,008	330V	24A	-	1.65V @ 15V, 24A	39W	-	Standard	46nC	24ns/89ns	196V, 12A, 10 Ohm	-	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IRGS4055PBF	Infineon Technologies	IGBT 300V 110A 255W D2PAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 110A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Power - Max: 255W Switching Energy: - Input Type: Standard Gate Charge: 132nC Td (on/off) @ 25°C: 44ns/245ns Test Condition: 180V, 35A, 10 Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,192	300V	110A	-	2.1V @ 15V, 110A	255W	-	Standard	132nC	44ns/245ns	180V, 35A, 10 Ohm	-	-40°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRG4PH30KD	Infineon Technologies	IGBT 1200V 20A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A Power - Max: 100W Switching Energy: 950µJ (on), 1.15mJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 39ns/220ns Test Condition: 800V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock5,616	1200V	20A	40A	4.2V @ 15V, 10A	100W	950µJ (on), 1.15mJ (off)	Standard	53nC	39ns/220ns	800V, 10A, 23 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
APT15GT60KRG	Microsemi Corporation	IGBT 600V 42A 184W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	Package: TO-220-3	Stock4,976	600V	42A	45A	2.5V @ 15V, 15A	184W	150µJ (on), 215µJ (off)	Standard	75nC	6ns/105ns	400V, 15A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220 [K]
FGA40N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 40A 160W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 160W Switching Energy: 470µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 15ns/65ns Test Condition: 300V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock7,584	600V	40A	160A	3V @ 15V, 20A	160W	470µJ (on), 130µJ (off)	Standard	77nC	15ns/65ns	300V, 20A, 10 Ohm, 15V	95ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
IRGC4063B	Infineon Technologies	IGBT CHIP WAFER IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock6,080	600V	48A	-	-	-	-	Standard	-	-	-	-	175°C (TJ)	Surface Mount	Die	Die
SGP07N120XKSA1	Infineon Technologies	IGBT 1200V 16.5A 125W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 16.5A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A Power - Max: 125W Switching Energy: 1mJ Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 27ns/440ns Test Condition: 800V, 8A, 47 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	Package: TO-220-3	Stock6,912	1200V	16.5A	27A	3.6V @ 15V, 8A	125W	1mJ	Standard	70nC	27ns/440ns	800V, 8A, 47 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	PG-TO220-3
IRGR2B60KDTRPBF	Infineon Technologies	IGBT 600V 6.3A 35W DPAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6.3A Current - Collector Pulsed (Icm): 8A Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A Power - Max: 35W Switching Energy: 74µJ (on), 39µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 11ns/150ns Test Condition: 400V, 2A, 100 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,192	600V	6.3A	8A	2.25V @ 15V, 2A	35W	74µJ (on), 39µJ (off)	Standard	12nC	11ns/150ns	400V, 2A, 100 Ohm, 15V	68ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
IXGT6N170AHV	IXYS	IGBT 1700V 6A 75W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 6A Current - Collector Pulsed (Icm): 14A Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Power - Max: 75W Switching Energy: 590µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 18.5nC Td (on/off) @ 25°C: 46ns/220ns Test Condition: 850V, 6A, 33 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,536	1700V	6A	14A	7V @ 15V, 3A	75W	590µJ (on), 180µJ (off)	Standard	18.5nC	46ns/220ns	850V, 6A, 33 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
NGD8201BNT4G	Littelfuse Inc.	IGBT 400V 20A 125W DPAK-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Power - Max: 115W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: -/4µs Test Condition: 300V, 6.5A, 1 kOhm Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,344	430V	15A	50A	1.8V @ 4.5V, 10A	115W	-	Logic	-	-/4µs	300V, 6.5A, 1 kOhm	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
AOT15B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 15A TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Power - Max: 214W Switching Energy: 290µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 13ns/116ns Test Condition: 400V, 15A, 20 Ohm, 15V Reverse Recovery Time (trr): 317ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock12,372	650V	30A	45A	2.15V @ 15V, 15A	214W	290µJ (on), 200µJ (off)	Standard	32nC	13ns/116ns	400V, 15A, 20 Ohm, 15V	317ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
STGF10NB60SD	STMicroelectronics	IGBT 600V 23A 25W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A Power - Max: 25W Switching Energy: 600µJ (on), 5mJ (off) Input Type: Standard Gate Charge: 33nC Td (on/off) @ 25°C: 700ns/1.2µs Test Condition: 480V, 10A, 1 kOhm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	Package: TO-220-3 Full Pack	Stock14,124	600V	23A	80A	1.75V @ 15V, 10A	25W	600µJ (on), 5mJ (off)	Standard	33nC	700ns/1.2µs	480V, 10A, 1 kOhm, 15V	37ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
AOTF10B65M2	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 30W Switching Energy: 180µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 12ns/91ns Test Condition: 400V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 262ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock14,676	650V	20A	30A	2V @ 15V, 10A	30W	180µJ (on), 130µJ (off)	Standard	24nC	12ns/91ns	400V, 10A, 30 Ohm, 15V	262ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
FGA6530WDF	Fairchild/ON Semiconductor	IGBT 650V 60A 176W TO3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 176W Switching Energy: 960µJ (on), 162µJ (off) Input Type: Standard Gate Charge: 37.4nC Td (on/off) @ 25°C: 12ns/42.4ns Test Condition: 400V, 30A, 6 Ohm, 15V Reverse Recovery Time (trr): 81ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock9,192	650V	60A	90A	2.2V @ 15V, 30A	176W	960µJ (on), 162µJ (off)	Standard	37.4nC	12ns/42.4ns	400V, 30A, 6 Ohm, 15V	81ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
ISL9V3036S3ST	Fairchild/ON Semiconductor	IGBT 360V 21A 150W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 360V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 17nC Td (on/off) @ 25°C: -/4.8µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,800	360V	21A	-	1.6V @ 4V, 6A	150W	-	Logic	17nC	-/4.8µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
NGTB20N135IHRWG	ON Semiconductor	IGBT 1350V 40A 394W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A Power - Max: 394W Switching Energy: 600µJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/245ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,528	1350V	40A	120A	2.65V @ 15V, 20A	394W	600µJ (off)	Standard	234nC	-/245ns	600V, 20A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
IHW30N135R3FKSA1	Infineon Technologies	IGBT 1350V 60A 349W TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A Power - Max: 349W Switching Energy: 1.93mJ (off) Input Type: Standard Gate Charge: 263nC Td (on/off) @ 25°C: -/337ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock10,224	1350V	60A	90A	1.85V @ 15V, 30A	349W	1.93mJ (off)	Standard	263nC	-/337ns	600V, 30A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
FGH30S130P	Fairchild/ON Semiconductor	IGBT 1300V 60A 500W TO-247AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1300V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 500W Switching Energy: - Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock8,184	1300V	60A	90A	2.3V @ 15V, 30A	500W	-	Standard	78nC	-	-	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
RGTH40TK65GC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 23A TO3PFM IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 23 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 56 W Switching Energy: - Input Type: Standard Gate Charge: 40 nC Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	Package: -	Stock966	650 V	23 A	80 A	2.1V @ 15V, 20A	56 W	-	Standard	40 nC	22ns/73ns	400V, 20A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM
HGTG20N60C3R	Harris Corporation	40A, 600V, RUGGED N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 164 W Switching Energy: - Input Type: Standard Gate Charge: 116 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: -	Request a Quote	600 V	40 A	80 A	2.2V @ 15V, 20A	164 W	-	Standard	116 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IHW30N160R2FKSA1	Infineon Technologies	IGBT 1600V 60A 312W TO247-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 312 W Switching Energy: 4.37mJ Input Type: Standard Gate Charge: 94 nC Td (on/off) @ 25°C: -/525ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Package: -	Request a Quote	1600 V	60 A	90 A	2.1V @ 15V, 30A	312 W	4.37mJ	Standard	94 nC	-/525ns	600V, 30A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
RJP4007ANS-00-Q6	Renesas Electronics Corporation	IGBT 400V 15A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGC11T120T8LX1SA1	Infineon Technologies	IGBT 1200V 8A SAWN ON FOIL IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	1200 V	-	24 A	2.07V @ 15V, 8A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
AIGB40N65H5ATMA1	Infineon Technologies	DISCRETE SWITCHES IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	Package: -	Stock195	650 V	40 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
RGPZ10BM40FHTL	Rohm Semiconductor	IGBT 460V 20A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 460 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Power - Max: 107 W Switching Energy: - Input Type: Standard Gate Charge: 14 nC Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	Package: -	Stock22,467	460 V	20 A	-	2.0V @ 5V, 10A	107 W	-	Standard	14 nC	500ns/4µs	300V, 8A, 100Ohm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252
PCFG40T65SQF	onsemi	IGBT FIELD STOP 650V WAFER IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 80 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	Package: -	Request a Quote	650 V	-	160 A	2.1V @ 15V, 40A	-	-	Standard	80 nC	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Wafer