Page 34 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRGB4607DPBF
Infineon Technologies

IGBT 600V 11A 58W TO220

Package: TO-220-3

Stock3,648
IRG7PH35UD1PBF
Infineon Technologies

IGBT 1200V 50A 179W TO247

Package: TO-247-3

Stock4,896
IRG4BC30F-STRL
Infineon Technologies

IGBT 600V 31A 100W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,560
FGA15N120ANTDTU
Fairchild/ON Semiconductor

IGBT 1200V 30A 186W TO3P

Package: TO-3P-3, SC-65-3

Stock5,440
IRG4BC30F-SPBF
Infineon Technologies

IGBT 600V 31A 100W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock332,532
IRGIB7B60KDPBF
Infineon Technologies

IGBT 600V 12A 39W TO220FP

Package: TO-220-3 Full Pack

Stock103,464
IGP20N65F5XKSA1
Infineon Technologies

IGBT 650V 40A 170W TO220-3

Package: TO-220-3

Stock3,760
IXGT24N170AH1
IXYS

IGBT 1700V 24A 250W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,288
IXGT72N60A3
IXYS

IGBT 600V 75A 540W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,088
IXDH35N60B
IXYS

IGBT 600V 60A 250W TO247AD

Package: TO-3P-3 Full Pack

Stock2,320
IXXH60N65B4
IXYS

IGBT 650V 116A 455W TO247AD

Package: TO-247-3

Stock5,664
IXGP42N30C3
IXYS

IGBT 300V 223W TO220AB

Package: TO-220-3

Stock6,880
NGTB25N120SWG
ON Semiconductor

IGBT 25A 1200V TO-247

Package: TO-247-3

Stock6,992
STGB30H60DLFB
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,984
AOTF10B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 10A TO220

Package: TO-220-3

Stock19,656
IXYH30N170C
IXYS

1700V/108A HIGH VOLTAGE XPT IGB

Package: TO-247-3

Stock6,832
IKB06N60TATMA1
Infineon Technologies

IGBT 600V 12A 88W TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,872
NGTB10N60R2DT4G
ON Semiconductor

IGBT 10A 600V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,824
STGW39NC60VD
STMicroelectronics

IGBT 600V 80A 250W TO247

Package: TO-247-3

Stock84,132
AFGHL25T120RL
onsemi

1200V/25A FSII IGBT LOW VCESAT (

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGB4607DPBF	Infineon Technologies	IGBT 600V 11A 58W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 27ns/120ns Test Condition: 400V, 4A, 100 Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock3,648	600V	11A	12A	2.05V @ 15V, 4A	58W	140µJ (on), 62µJ (off)	Standard	9nC	27ns/120ns	400V, 4A, 100 Ohm, 15V	48ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB
IRG7PH35UD1PBF	Infineon Technologies	IGBT 1200V 50A 179W TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock4,896	1200V	50A	150A	2.2V @ 15V, 20A	179W	620µJ (off)	Standard	85nC	-/160ns	600V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4BC30F-STRL	Infineon Technologies	IGBT 600V 31A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,560	600V	31A	120A	1.8V @ 15V, 17A	100W	230µJ (on), 1.18mJ (off)	Standard	51nC	21ns/200ns	480V, 17A, 23 Ohm, 15V	-	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
FGA15N120ANTDTU	Fairchild/ON Semiconductor	IGBT 1200V 30A 186W TO3P IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 186W Switching Energy: 3mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 15ns/160ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 330ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock5,440	1200V	30A	45A	2.4V @ 15V, 15A	186W	3mJ (on), 600µJ (off)	Standard	120nC	15ns/160ns	600V, 15A, 10 Ohm, 15V	330ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IRG4BC30F-SPBF	Infineon Technologies	IGBT 600V 31A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock332,532	600V	31A	120A	1.8V @ 15V, 17A	100W	230µJ (on), 1.18mJ (off)	Standard	51nC	21ns/200ns	480V, 17A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRGIB7B60KDPBF	Infineon Technologies	IGBT 600V 12A 39W TO220FP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Power - Max: 39W Switching Energy: 160µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 29nC Td (on/off) @ 25°C: 23ns/140ns Test Condition: 400V, 8A, 50 Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	Package: TO-220-3 Full Pack	Stock103,464	600V	12A	24A	2.2V @ 15V, 8A	39W	160µJ (on), 160µJ (off)	Standard	29nC	23ns/140ns	400V, 8A, 50 Ohm, 15V	95ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IGP20N65F5XKSA1	Infineon Technologies	IGBT 650V 40A 170W TO220-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 125W Switching Energy: 160µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: 20ns/165ns Test Condition: 400V, 10A, 32 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO-220-3	Package: TO-220-3	Stock3,760	650V	42A	60A	2.1V @ 15V, 20A	125W	160µJ (on), 60µJ (off)	Standard	48nC	20ns/165ns	400V, 10A, 32 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	PG-TO-220-3
IXGT24N170AH1	IXYS	IGBT 1700V 24A 250W TO268 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Power - Max: 250W Switching Energy: 2.97mJ (on), 790µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 21ns/336ns Test Condition: 850V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,288	1700V	24A	75A	6V @ 15V, 16A	250W	2.97mJ (on), 790µJ (off)	Standard	140nC	21ns/336ns	850V, 24A, 10 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGT72N60A3	IXYS	IGBT 600V 75A 540W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Power - Max: 540W Switching Energy: 1.38mJ (on), 3.5mJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 31ns/320ns Test Condition: 480V, 50A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,088	600V	75A	400A	1.35V @ 15V, 60A	540W	1.38mJ (on), 3.5mJ (off)	Standard	230nC	31ns/320ns	480V, 50A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXDH35N60B	IXYS	IGBT 600V 60A 250W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 70A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A Power - Max: 250W Switching Energy: 1.6mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: - Test Condition: 300V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD (IXDH)	Package: TO-3P-3 Full Pack	Stock2,320	600V	60A	70A	2.7V @ 15V, 35A	250W	1.6mJ (on), 800µJ (off)	Standard	120nC	-	300V, 35A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-247AD (IXDH)
IXXH60N65B4	IXYS	IGBT 650V 116A 455W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 116A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 455W Switching Energy: 3.13mJ (on), 1.15mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 37ns/145ns Test Condition: 400V, 60A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXXH)	Package: TO-247-3	Stock5,664	650V	116A	250A	2V @ 15V, 60A	455W	3.13mJ (on), 1.15mJ (off)	Standard	95nC	37ns/145ns	400V, 60A, 5 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXXH)
IXGP42N30C3	IXYS	IGBT 300V 223W TO220AB IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A Power - Max: 223W Switching Energy: 120µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 76nC Td (on/off) @ 25°C: 21ns/113ns Test Condition: 200V, 21A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock6,880	300V	-	250A	1.85V @ 15V, 42A	223W	120µJ (on), 150µJ (off)	Standard	76nC	21ns/113ns	200V, 21A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
NGTB25N120SWG	ON Semiconductor	IGBT 25A 1200V TO-247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 154ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock6,992	1200V	50A	100A	2.4V @ 15V, 25A	385W	1.95mJ (on), 600µJ (off)	Standard	178nC	87ns/179ns	600V, 25A, 10 Ohm, 15V	154ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STGB30H60DLFB	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 260W Switching Energy: 393µJ (off) Input Type: Standard Gate Charge: 149nC Td (on/off) @ 25°C: -/146ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,984	600V	60A	120A	2V @ 15V, 30A	260W	393µJ (off)	Standard	149nC	-/146ns	400V, 30A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
AOTF10B65M1	Alpha & Omega Semiconductor Inc.	IGBT 650V 10A TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 30W Switching Energy: 180µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 12ns/91ns Test Condition: 400V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 263ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock19,656	650V	20A	30A	2V @ 15V, 10A	30W	180µJ (on), 130µJ (off)	Standard	24nC	12ns/91ns	400V, 10A, 30 Ohm, 15V	263ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
IXYH30N170C	IXYS	1700V/108A HIGH VOLTAGE XPT IGB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 108A Current - Collector Pulsed (Icm): 255A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A Power - Max: 937W Switching Energy: 5.9mJ (on), 3.3mJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 850V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock6,832	1700V	108A	255A	3.7V @ 15V, 30A	937W	5.9mJ (on), 3.3mJ (off)	Standard	140nC	28ns/150ns	850V, 30A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IKB06N60TATMA1	Infineon Technologies	IGBT 600V 12A 88W TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Power - Max: 88W Switching Energy: 200µJ Input Type: Standard Gate Charge: 42nC Td (on/off) @ 25°C: 9ns/130ns Test Condition: 400V, 6A, 23 Ohm, 15V Reverse Recovery Time (trr): 123ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO-263	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,872	600V	12A	18A	2.05V @ 15V, 6A	88W	200µJ	Standard	42nC	9ns/130ns	400V, 6A, 23 Ohm, 15V	123ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO-263
NGTB10N60R2DT4G	ON Semiconductor	IGBT 10A 600V DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 72W Switching Energy: 412µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 48ns/120ns Test Condition: 300V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,824	600V	20A	40A	2.1V @ 15V, 10A	72W	412µJ (on), 140µJ (off)	Standard	53nC	48ns/120ns	300V, 10A, 30 Ohm, 15V	90ns	175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
STGW39NC60VD	STMicroelectronics	IGBT 600V 80A 250W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 250W Switching Energy: 333µJ (on), 537µJ (off) Input Type: Standard Gate Charge: 126nC Td (on/off) @ 25°C: 33ns/178ns Test Condition: 390V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 45ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock84,132	600V	80A	220A	2.4V @ 15V, 30A	250W	333µJ (on), 537µJ (off)	Standard	126nC	33ns/178ns	390V, 30A, 10 Ohm, 15V	45ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
AFGHL25T120RL	onsemi	1200V/25A FSII IGBT LOW VCESAT ( IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 48 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 400 W Switching Energy: 1.94mJ (on), 730µJ (off) Input Type: Standard Gate Charge: 277 nC Td (on/off) @ 25°C: 27.2ns/116ns Test Condition: 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): 159 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: -	Request a Quote	1250 V	48 A	100 A	2V @ 15V, 25A	400 W	1.94mJ (on), 730µJ (off)	Standard	277 nC	27.2ns/116ns	600V, 25A, 5Ohm, 15V	159 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIGC14T60SNCX1SA5	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
RGT60TS65DGC13	Rohm Semiconductor	IGBT TRNCH FIELD 650V 55A TO247G IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 55 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 194 W Switching Energy: - Input Type: Standard Gate Charge: 58 nC Td (on/off) @ 25°C: 29ns/100ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 58 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247G	Package: -	Stock1,764	650 V	55 A	90 A	2.1V @ 15V, 30A	194 W	-	Standard	58 nC	29ns/100ns	400V, 30A, 10Ohm, 15V	58 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247G
STGWA40H65DHFB2	STMicroelectronics	DISCRETE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 72 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 230 W Switching Energy: 214µJ (on), 220µJ (off) Input Type: Standard Gate Charge: 153 nC Td (on/off) @ 25°C: 23ns/77ns Test Condition: 400V, 20A, 4.7Ohm, 15V Reverse Recovery Time (trr): 111 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	Package: -	Request a Quote	650 V	72 A	120 A	2V @ 15V, 40A	230 W	214µJ (on), 220µJ (off)	Standard	153 nC	23ns/77ns	400V, 20A, 4.7Ohm, 15V	111 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
MIW30N65FA-BP	Micro Commercial Co	IGBT 650V 30A,TO-247AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 187 W Switching Energy: 870µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 37ns/113ns Test Condition: 300V, 30A, 33Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AB	Package: -	Stock5,388	650 V	60 A	120 A	2.4V @ 15V, 30A	187 W	870µJ (on), 260µJ (off)	Standard	150 nC	37ns/113ns	300V, 30A, 33Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AB
AOD5B65MQ1E	Alpha & Omega Semiconductor Inc.	IGBT 5A 650V TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 15 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A Power - Max: 52 W Switching Energy: 90µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 8.8 nC Td (on/off) @ 25°C: 7ns/78ns Test Condition: 400V, 5A, 60Ohm, 15V Reverse Recovery Time (trr): 74 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	650 V	10 A	15 A	2.7V @ 15V, 5A	52 W	90µJ (on), 60µJ (off)	Standard	8.8 nC	7ns/78ns	400V, 5A, 60Ohm, 15V	74 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
PCFGY4L140T120SWD	onsemi	IGBT FIELD STOP 1200V 140A TP247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXYR100N65A3V1	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJH30E2DPP-Z0-T2	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-