Page 38 - Transistors - IGBTs - Single | Discrete Semiconductor Products

SGD04N60BUMA1
Infineon Technologies

IGBT 600V 9.4A 50W TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,368
IRGPC40U
Infineon Technologies

IGBT UFAST 600V 40A TO-247AC

Package: TO-247-3

Stock15,828
STGF10NC60SD
STMicroelectronics

IGBT 600V 10A 25W TP220FP

Package: TO-220-3 Full Pack

Stock6,768
IXGH24N60CD1
IXYS

IGBT 600V 48A 150W TO247AD

Package: TO-247-3

Stock103,464
IXGA12N60C
IXYS

IGBT 600V 24A 100W TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,768
FGPF30N30
Fairchild/ON Semiconductor

IGBT 300V 46W TO220F

Package: TO-220-3 Full Pack

Stock215,064
NGB8206NG
ON Semiconductor

IGBT 390V 20A 150W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,504
SGH80N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 80A 195W TO3P

Package: TO-3P-3, SC-65-3

Stock6,640
SGF40N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 40A 100W TO3PF

Package: SC-94

Stock14,772
AIKB20N60CTATMA1
Infineon Technologies

IC DISCRETE 600V TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,784
IXGH10N100
IXYS

IGBT 1000V 20A 100W TO247AD

Package: TO-247-3

Stock4,272
NGTB75N65FL2WAG
ON Semiconductor

IGBT FIELD STOP 650V TO247-4

Package: TO-247-4

Stock7,760
STGD5NB120SZT4
STMicroelectronics

IGBT 1200V 10A 75W DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,600
APT35GA90B
Microsemi Corporation

IGBT 900V 63A 290W TO-247

Package: TO-247-3

Stock7,408
IRGP4069DPBF
Infineon Technologies

IGBT 600V 76A 268W TO247AC

Package: TO-247-3

Stock14,310
IRG4PH40UPBF
Infineon Technologies

IGBT 1200V 41A 160W TO247AC

Package: TO-247-3

Stock5,200
IKD15N60RFATMA1
Infineon Technologies

IGBT TRENCH FS 600V 30A TO252-3

Package: -

Stock16,824
IKA10N65ET6XKSA2
Infineon Technologies

IGBT TRENCH FS 650V 15A TO220-3

Package: -

Stock1,500
IHW40N60RFFKSA1
Infineon Technologies

IGBT TRENCH 600V 80A TO247-3

Package: -

Request a Quote
SIGC07T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SGD04N60BUMA1	Infineon Technologies	IGBT 600V 9.4A 50W TO252-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9.4A Current - Collector Pulsed (Icm): 19A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A Power - Max: 50W Switching Energy: 131µJ Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 22ns/237ns Test Condition: 400V, 4A, 67 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,368	600V	9.4A	19A	2.4V @ 15V, 4A	50W	131µJ	Standard	24nC	22ns/237ns	400V, 4A, 67 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
IRGPC40U	Infineon Technologies	IGBT UFAST 600V 40A TO-247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock15,828	600V	40A	-	3V @ 15V, 20A	160W	-	Standard	-	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
STGF10NC60SD	STMicroelectronics	IGBT 600V 10A 25W TP220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 25A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A Power - Max: 25W Switching Energy: 60µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 18nC Td (on/off) @ 25°C: 19ns/160ns Test Condition: 390V, 5A, 10 Ohm, 15V Reverse Recovery Time (trr): 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	Package: TO-220-3 Full Pack	Stock6,768	600V	10A	25A	1.65V @ 15V, 5A	25W	60µJ (on), 340µJ (off)	Standard	18nC	19ns/160ns	390V, 5A, 10 Ohm, 15V	22ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
IXGH24N60CD1	IXYS	IGBT 600V 48A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 240µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock103,464	600V	48A	80A	2.5V @ 15V, 24A	150W	240µJ (off)	Standard	55nC	15ns/75ns	480V, 24A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGA12N60C	IXYS	IGBT 600V 24A 100W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 90µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,768	600V	24A	48A	2.7V @ 15V, 12A	100W	90µJ (off)	Standard	32nC	20ns/60ns	480V, 12A, 18 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
FGPF30N30	Fairchild/ON Semiconductor	IGBT 300V 46W TO220F IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A Power - Max: 46W Switching Energy: - Input Type: Standard Gate Charge: 39nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	Package: TO-220-3 Full Pack	Stock215,064	300V	-	80A	1.5V @ 15V, 10A	46W	-	Standard	39nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
NGB8206NG	ON Semiconductor	IGBT 390V 20A 150W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: -/5µs Test Condition: 300V, 9A, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,504	390V	20A	50A	1.9V @ 4.5V, 20A	150W	-	Logic	-	-/5µs	300V, 9A, 1 kOhm, 5V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
SGH80N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 80A 195W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 195W Switching Energy: 570µJ (on), 590µJ (off) Input Type: Standard Gate Charge: 175nC Td (on/off) @ 25°C: 23ns/90ns Test Condition: 300V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock6,640	600V	80A	220A	2.6V @ 15V, 40A	195W	570µJ (on), 590µJ (off)	Standard	175nC	23ns/90ns	300V, 40A, 5 Ohm, 15V	95ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
SGF40N60UFTU	Fairchild/ON Semiconductor	IGBT 600V 40A 100W TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: 15ns/65ns Test Condition: 300V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PF	Package: SC-94	Stock14,772	600V	40A	160A	2.6V @ 15V, 20A	100W	160µJ (on), 200µJ (off)	Standard	97nC	15ns/65ns	300V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	SC-94	TO-3PF
AIKB20N60CTATMA1	Infineon Technologies	IC DISCRETE 600V TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Power - Max: 156W Switching Energy: 310µJ (on), 460µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 18ns/199ns Test Condition: 600V, 20A, 12 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,784	600V	40A	60A	2.05V @ 15V, 20A	156W	310µJ (on), 460µJ (off)	Standard	120nC	18ns/199ns	600V, 20A, 12 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3
IXGH10N100	IXYS	IGBT 1000V 20A 100W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock4,272	1000V	20A	-	3.5V @ 15V, 10A	100W	-	Standard	-	-	-	-	-	Through Hole	TO-247-3	TO-247AD (IXGH)
NGTB75N65FL2WAG	ON Semiconductor	IGBT FIELD STOP 650V TO247-4 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 536W Switching Energy: 610µJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 23ns/157ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	Package: TO-247-4	Stock7,760	650V	200A	200A	2V @ 15V, 75A	536W	610µJ (on), 1.2mJ (off)	Standard	310nC	23ns/157ns	400V, 75A, 10 Ohm, 15V	90ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4L
STGD5NB120SZT4	STMicroelectronics	IGBT 1200V 10A 75W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 10A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 75W Switching Energy: 2.59mJ (on), 9mJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 690ns/12.1µs Test Condition: 960V, 5A, 1 kOhm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,600	1200V	10A	10A	2V @ 15V, 5A	75W	2.59mJ (on), 9mJ (off)	Standard	-	690ns/12.1µs	960V, 5A, 1 kOhm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
APT35GA90B	Microsemi Corporation	IGBT 900V 63A 290W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A Power - Max: 290W Switching Energy: 642µJ (on), 382µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 12ns/104ns Test Condition: 600V, 18A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock7,408	900V	63A	105A	3.1V @ 15V, 18A	290W	642µJ (on), 382µJ (off)	Standard	84nC	12ns/104ns	600V, 18A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IRGP4069DPBF	Infineon Technologies	IGBT 600V 76A 268W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 76A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A Power - Max: 268W Switching Energy: 390µJ (on), 632µJ (off) Input Type: Standard Gate Charge: 69nC Td (on/off) @ 25°C: 46ns/105ns Test Condition: 400V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock14,310	600V	76A	105A	1.85V @ 15V, 35A	268W	390µJ (on), 632µJ (off)	Standard	69nC	46ns/105ns	400V, 35A, 10 Ohm, 15V	120ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4PH40UPBF	Infineon Technologies	IGBT 1200V 41A 160W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 82A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Power - Max: 160W Switching Energy: 1.04mJ (on), 3.4mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 24ns/220ns Test Condition: 960V, 21A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock5,200	1200V	41A	82A	3.1V @ 15V, 21A	160W	1.04mJ (on), 3.4mJ (off)	Standard	86nC	24ns/220ns	960V, 21A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IKD15N60RFATMA1	Infineon Technologies	IGBT TRENCH FS 600V 30A TO252-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 250 W Switching Energy: 270µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90 nC Td (on/off) @ 25°C: 13ns/160ns Test Condition: 400V, 15A, 15Ohm, 15V Reverse Recovery Time (trr): 74 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	Package: -	Stock16,824	600 V	30 A	45 A	2.5V @ 15V, 15A	250 W	270µJ (on), 250µJ (off)	Standard	90 nC	13ns/160ns	400V, 15A, 15Ohm, 15V	74 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3
IKA10N65ET6XKSA2	Infineon Technologies	IGBT TRENCH FS 650V 15A TO220-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 42.5 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A Power - Max: 40 W Switching Energy: 200µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 27 nC Td (on/off) @ 25°C: 30ns/106ns Test Condition: 400V, 8.5A, 47Ohm, 15V Reverse Recovery Time (trr): 51 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-FP	Package: -	Stock1,500	650 V	15 A	42.5 A	1.9V @ 15V, 8.5A	40 W	200µJ (on), 70µJ (off)	Standard	27 nC	30ns/106ns	400V, 8.5A, 47Ohm, 15V	51 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	PG-TO220-3-FP
IHW40N60RFFKSA1	Infineon Technologies	IGBT TRENCH 600V 80A TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 305 W Switching Energy: 560µJ (off) Input Type: Standard Gate Charge: 220 nC Td (on/off) @ 25°C: -/175ns Test Condition: 400V, 40A, 5.6Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	Package: -	Request a Quote	600 V	80 A	120 A	2.4V @ 15V, 40A	305 W	560µJ (off)	Standard	220 nC	-/175ns	400V, 40A, 5.6Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
SIGC07T60NCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 6A, 54Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	6 A	18 A	2.5V @ 15V, 6A	-	-	Standard	-	21ns/110ns	300V, 6A, 54Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IGC07T120T8LX1SA2	Infineon Technologies	IGBT 1200V 4A SAWN ON FOIL IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 12 A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	1200 V	-	12 A	2.02V @ 15V, 4A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
FGH25T120SMD-F155	onsemi	IGBT TRENCH FS 1200V 50A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 428 W Switching Energy: 1.74mJ (on), 560µJ (off) Input Type: Standard Gate Charge: 225 nC Td (on/off) @ 25°C: 40ns/490ns Test Condition: 600V, 25A, 23Ohm, 15V Reverse Recovery Time (trr): 60 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: -	Request a Quote	1200 V	50 A	100 A	2.4V @ 15V, 25A	428 W	1.74mJ (on), 560µJ (off)	Standard	225 nC	40ns/490ns	600V, 25A, 23Ohm, 15V	60 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
HGTP7N60A4_NL	Fairchild Semiconductor	IGBT, 34A, 600V, N-CHANNEL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 34 A Current - Collector Pulsed (Icm): 56 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125 W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37 nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	Package: -	Request a Quote	600 V	34 A	56 A	2.7V @ 15V, 7A	125 W	55µJ (on), 60µJ (off)	Standard	37 nC	11ns/100ns	390V, 7A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXGA30N120B3-TRL	IXYS	IXGA30N120B3 TRL IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Power - Max: 300 W Switching Energy: 3.47mJ (on), 2.16mJ (off) Input Type: Standard Gate Charge: 87 nC Td (on/off) @ 25°C: 16ns/127ns Test Condition: 960V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 37 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	Package: -	Request a Quote	1200 V	60 A	150 A	3.5V @ 15V, 30A	300 W	3.47mJ (on), 2.16mJ (off)	Standard	87 nC	16ns/127ns	960V, 30A, 5Ohm, 15V	37 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
SIGC07T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 24ns/248ns Test Condition: 400V, 6A, 50Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	6 A	18 A	2.5V @ 15V, 6A	-	-	Standard	-	24ns/248ns	400V, 6A, 50Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IGQ120N120S7XKSA1	Infineon Technologies	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock729	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RBN50H65T1FPQ-A0-CB0	Renesas Electronics Corporation	IGBT TRENCH 650V 100A TO247A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 250 W Switching Energy: 830µJ (on), 670µJ (off) Input Type: Standard Gate Charge: 36 nC Td (on/off) @ 25°C: 20ns/93ns Test Condition: 400V, 50A, 16Ohm, 15V Reverse Recovery Time (trr): 65 ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	Package: -	Request a Quote	650 V	100 A	-	2V @ 15V, 50A	250 W	830µJ (on), 670µJ (off)	Standard	36 nC	20ns/93ns	400V, 50A, 16Ohm, 15V	65 ns	175°C (TJ)	Through Hole	TO-247-3	TO-247A
RGW80TS65EHRC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 80A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 214 W Switching Energy: - Input Type: Standard Gate Charge: 110 nC Td (on/off) @ 25°C: 43ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 86 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	Package: -	Stock1,350	650 V	80 A	160 A	1.9V @ 15V, 40A	214 W	-	Standard	110 nC	43ns/148ns	400V, 20A, 10Ohm, 15V	86 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N