Page 40 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG4BC15UD-L
Infineon Technologies

IGBT 600V 14A 49W TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,496
IRG4BC30W
Infineon Technologies

IGBT 600V 23A 100W TO220AB

Package: TO-220-3

Stock14,544
NGD8205NT4
ON Semiconductor

IGBT 390V 20A 125W DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,040
SGH40N60UFDM1TU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO3P

Package: TO-3P-3, SC-65-3

Stock3,392
IRG4BH20K-STRLP
Infineon Technologies

IGBT 1200V 11A 60W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,208
APT65GP60L2DQ2G
Microsemi Corporation

IGBT 600V 198A 833W TO264

Package: TO-264-3, TO-264AA

Stock17,748
IXGK400N30A3
IXYS

IGBT 300V 400A 1000W TO264AA

Package: TO-264-3, TO-264AA

Stock5,712
IXA20RG1200DHGLB
IXYS

IGBT 1200V 32A 125W SMPD

Package: 9-SMD Module

Stock7,760
IXGT32N90B2D1
IXYS

IGBT 900V 64A 300W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,896
IXGH10N170A
IXYS

IGBT 1700V 10A 140W TO247

Package: TO-247-3

Stock92,916
IXGA4N100
IXYS

IGBT 1000V 8A 40W TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,432
NGTG12N60TF1G
ON Semiconductor

IGBT 600V 24A 54W TO-3PF

Package: TO-3P-3 Full Pack

Stock3,936
APT40GR120B
Microsemi Corporation

IGBT 1200V 88A 500W TO247

Package: TO-247-3

Stock4,544
AOTF15B65M2
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO220

Package: TO-220-3

Stock13,722
STGB6NC60HT4
STMicroelectronics

IGBT 600V 15A 56W D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,986
APT40GP60B2DQ2G
Microsemi Corporation

IGBT 600V 100A 543W TMAX

Package: TO-247-3 Variant

Stock4,352
IKW75N65ES5XKSA1
Infineon Technologies

IGBT 650V 75A FAST DIODE TO247-3

Package: TO-247-3

Stock6,432
STGP19NC60H
STMicroelectronics

IGBT 600V 40A 130W TO220

Package: TO-220-3

Stock22,752
AOT10B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 163W TO220

Package: TO-220-3

Stock45,444
IRG4IBC30UDPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

Package: TO-220-3 Full Pack

Stock22,974

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG4BC15UD-L	Infineon Technologies	IGBT 600V 14A 49W TO262 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 42A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A Power - Max: 49W Switching Energy: 240µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: 17ns/160ns Test Condition: 480V, 7.8A, 75 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,496	600V	14A	42A	2.4V @ 15V, 7.8A	49W	240µJ (on), 260µJ (off)	Standard	23nC	17ns/160ns	480V, 7.8A, 75 Ohm, 15V	28ns	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IRG4BC30W	Infineon Technologies	IGBT 600V 23A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock14,544	600V	23A	92A	2.7V @ 15V, 12A	100W	130µJ (on), 130µJ (off)	Standard	51nC	25ns/99ns	480V, 12A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
NGD8205NT4	ON Semiconductor	IGBT 390V 20A 125W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A Power - Max: 125W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: -/5µs Test Condition: 300V, 9A, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,040	390V	20A	50A	1.9V @ 4.5V, 20A	125W	-	Logic	-	-/5µs	300V, 9A, 1 kOhm, 5V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
SGH40N60UFDM1TU	Fairchild/ON Semiconductor	IGBT 600V 40A 160W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Power - Max: 160W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: 15ns/65ns Test Condition: 300V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	Package: TO-3P-3, SC-65-3	Stock3,392	600V	40A	160A	2.6V @ 15V, 20A	160W	160µJ (on), 200µJ (off)	Standard	97nC	15ns/65ns	300V, 20A, 10 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
IRG4BH20K-STRLP	Infineon Technologies	IGBT 1200V 11A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,208	1200V	11A	22A	4.3V @ 15V, 5A	60W	450µJ (on), 440µJ (off)	Standard	28nC	23ns/93ns	960V, 5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
APT65GP60L2DQ2G	Microsemi Corporation	IGBT 600V 198A 833W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 198A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A Power - Max: 833W Switching Energy: 605µJ (on), 895µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 30ns/90ns Test Condition: 400V, 65A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: -	Package: TO-264-3, TO-264AA	Stock17,748	600V	198A	250A	2.7V @ 15V, 65A	833W	605µJ (on), 895µJ (off)	Standard	210nC	30ns/90ns	400V, 65A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	-
IXGK400N30A3	IXYS	IGBT 300V 400A 1000W TO264AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 400A Current - Collector Pulsed (Icm): 1200A Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A Power - Max: 1000W Switching Energy: - Input Type: Standard Gate Charge: 560nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	Package: TO-264-3, TO-264AA	Stock5,712	300V	400A	1200A	1.15V @ 15V, 100A	1000W	-	Standard	560nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
IXA20RG1200DHGLB	IXYS	IGBT 1200V 32A 125W SMPD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 125W Switching Energy: 1.55mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: 600V, 15A, 56 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD?.B	Package: 9-SMD Module	Stock7,760	1200V	32A	-	2.1V @ 15V, 15A	125W	1.55mJ (on), 1.7mJ (off)	Standard	48nC	-	600V, 15A, 56 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	9-SMD Module	ISOPLUS-SMPD?.B
IXGT32N90B2D1	IXYS	IGBT 900V 64A 300W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A Power - Max: 300W Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 89nC Td (on/off) @ 25°C: 20ns/260ns Test Condition: 720V, 32A, 5 Ohm, 15V Reverse Recovery Time (trr): 190ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,896	900V	64A	200A	2.7V @ 15V, 32A	300W	2.2mJ (off)	Standard	89nC	20ns/260ns	720V, 32A, 5 Ohm, 15V	190ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGH10N170A	IXYS	IGBT 1700V 10A 140W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A Power - Max: 140W Switching Energy: 380µJ (off) Input Type: Standard Gate Charge: 29nC Td (on/off) @ 25°C: 46ns/190ns Test Condition: 850V, 10A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock92,916	1700V	10A	20A	6V @ 15V, 5A	140W	380µJ (off)	Standard	29nC	46ns/190ns	850V, 10A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGA4N100	IXYS	IGBT 1000V 8A 40W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 16A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A Power - Max: 40W Switching Energy: 900µJ (off) Input Type: Standard Gate Charge: 13.6nC Td (on/off) @ 25°C: 20ns/390ns Test Condition: 800V, 4A, 120 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,432	1000V	8A	16A	2.7V @ 15V, 4A	40W	900µJ (off)	Standard	13.6nC	20ns/390ns	800V, 4A, 120 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
NGTG12N60TF1G	ON Semiconductor	IGBT 600V 24A 54W TO-3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 88A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 12A Power - Max: 54W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 55ns/200ns Test Condition: 300V, 15A, 30 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: -	Package: TO-3P-3 Full Pack	Stock3,936	600V	24A	88A	1.6V @ 15V, 12A	54W	-	Standard	84nC	55ns/200ns	300V, 15A, 30 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	-
APT40GR120B	Microsemi Corporation	IGBT 1200V 88A 500W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 88A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Power - Max: 500W Switching Energy: 1.38mJ (on), 906µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 22ns/163ns Test Condition: 600V, 40A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock4,544	1200V	88A	160A	3.2V @ 15V, 40A	500W	1.38mJ (on), 906µJ (off)	Standard	210nC	22ns/163ns	600V, 40A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
AOTF15B65M2	Alpha & Omega Semiconductor Inc.	IGBT 650V 15A TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Power - Max: 36W Switching Energy: 290µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 15ns/94ns Test Condition: 400V, 15A, 20 Ohm, 15V Reverse Recovery Time (trr): 298ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock13,722	650V	30A	45A	2.15V @ 15V, 15A	36W	290µJ (on), 200µJ (off)	Standard	32nC	15ns/94ns	400V, 15A, 20 Ohm, 15V	298ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
STGB6NC60HT4	STMicroelectronics	IGBT 600V 15A 56W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 21A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Power - Max: 56W Switching Energy: 20µJ (on), 68µJ (off) Input Type: Standard Gate Charge: 13.6nC Td (on/off) @ 25°C: 12ns/76ns Test Condition: 390V, 3A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,986	600V	15A	21A	2.5V @ 15V, 3A	56W	20µJ (on), 68µJ (off)	Standard	13.6nC	12ns/76ns	390V, 3A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
APT40GP60B2DQ2G	Microsemi Corporation	IGBT 600V 100A 543W TMAX IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 543W Switching Energy: 385µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/64ns Test Condition: 400V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	Package: TO-247-3 Variant	Stock4,352	600V	100A	160A	2.7V @ 15V, 40A	543W	385µJ (on), 350µJ (off)	Standard	135nC	20ns/64ns	400V, 40A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
IKW75N65ES5XKSA1	Infineon Technologies	IGBT 650V 75A FAST DIODE TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A Power - Max: 395W Switching Energy: 2.4mJ (on), 950µJ (off) Input Type: Standard Gate Charge: 164nC Td (on/off) @ 25°C: 40ns/144ns Test Condition: 400V, 75A, 18 Ohm, 15V Reverse Recovery Time (trr): 85ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock6,432	650V	80A	300A	1.75V @ 15V, 75A	395W	2.4mJ (on), 950µJ (off)	Standard	164nC	40ns/144ns	400V, 75A, 18 Ohm, 15V	85ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
STGP19NC60H	STMicroelectronics	IGBT 600V 40A 130W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Power - Max: 130W Switching Energy: 85µJ (on), 189µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 25ns/97ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock22,752	600V	40A	60A	2.5V @ 15V, 12A	130W	85µJ (on), 189µJ (off)	Standard	53nC	25ns/97ns	390V, 12A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
AOT10B60D	Alpha & Omega Semiconductor Inc.	IGBT 600V 20A 163W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Power - Max: 163W Switching Energy: 260µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 17.4nC Td (on/off) @ 25°C: 10ns/72ns Test Condition: 400V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock45,444	600V	20A	40A	1.8V @ 15V, 10A	163W	260µJ (on), 70µJ (off)	Standard	17.4nC	10ns/72ns	400V, 10A, 30 Ohm, 15V	105ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
IRG4IBC30UDPBF	Infineon Technologies	IGBT 600V 17A 45W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 45W Switching Energy: 380µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 40ns/91ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	Package: TO-220-3 Full Pack	Stock22,974	600V	17A	68A	2.1V @ 15V, 12A	45W	380µJ (on), 160µJ (off)	Standard	50nC	40ns/91ns	480V, 12A, 23 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
MIW75N65F-BP	Micro Commercial Co	Interface IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Power - Max: 395 W Switching Energy: 2.64mJ (on), 920µJ (off) Input Type: Standard Gate Charge: 130 nC Td (on/off) @ 25°C: 34ns/183ns Test Condition: 400V, 75A, 8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: -	Request a Quote	650 V	75 A	300 A	1.95V @ 15V, 75A	395 W	2.64mJ (on), 920µJ (off)	Standard	130 nC	34ns/183ns	400V, 75A, 8Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
RGTVX6TS65GC11	Rohm Semiconductor	IGBT TRENCH FLD 650V 144A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 144 A Current - Collector Pulsed (Icm): 320 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Power - Max: 404 W Switching Energy: 2.65mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 171 nC Td (on/off) @ 25°C: 45ns/201ns Test Condition: 400V, 80A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	Package: -	Stock942	650 V	144 A	320 A	1.9V @ 15V, 80A	404 W	2.65mJ (on), 1.8mJ (off)	Standard	171 nC	45ns/201ns	400V, 80A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
IKB30N65EH5ATMA1	Infineon Technologies	IGBT TRENCH FS 650V 55A TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 55 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 188 W Switching Energy: 870µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 24ns/159ns Test Condition: 400V, 30A, 22Ohm, 15V Reverse Recovery Time (trr): 75 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	Package: -	Stock14,790	650 V	55 A	90 A	2.1V @ 15V, 30A	188 W	870µJ (on), 300µJ (off)	Standard	70 nC	24ns/159ns	400V, 30A, 22Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3
XGB8206ATI	Littelfuse Inc.	IGBT N-CH 20A 350V D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXYA30N120A4HV	IXYS	DISC IGBT XPT-GENX4 TO-263D2 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 106 A Current - Collector Pulsed (Icm): 184 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Power - Max: 500 W Switching Energy: 4mJ (on), 3.4mJ (off) Input Type: Standard Gate Charge: 57 nC Td (on/off) @ 25°C: 15ns/235ns Test Condition: 960V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	Package: -	Request a Quote	1200 V	106 A	184 A	1.9V @ 15V, 25A	500 W	4mJ (on), 3.4mJ (off)	Standard	57 nC	15ns/235ns	960V, 25A, 5Ohm, 15V	42 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV
IXYK120N120B3	IXYS	DISC IGBT XPT-GENX3 TO-264(3) IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 320 A Current - Collector Pulsed (Icm): 800 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Power - Max: 1500 W Switching Energy: 9.7mJ (on), 21.5mJ (off) Input Type: Standard Gate Charge: 400 nC Td (on/off) @ 25°C: 30ns/340ns Test Condition: 960V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): 54 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXYK)	Package: -	Request a Quote	1200 V	320 A	800 A	2.2V @ 15V, 100A	1500 W	9.7mJ (on), 21.5mJ (off)	Standard	400 nC	30ns/340ns	960V, 100A, 1Ohm, 15V	54 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXYK)
SIGC81T60NCX1SA5	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 95ns/200ns Test Condition: 300V, 100A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	100 A	300 A	2.5V @ 15V, 100A	-	-	Standard	-	95ns/200ns	300V, 100A, 2.2Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IXYH20N65B3	IXYS	DISC IGBT XPT-GENX3 TO-247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 58 A Current - Collector Pulsed (Icm): 108 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 230 W Switching Energy: 500µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 29 nC Td (on/off) @ 25°C: 12ns/103ns Test Condition: 400V, 20A, 20Ohm, 15V Reverse Recovery Time (trr): 25 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: -	Request a Quote	650 V	58 A	108 A	2.1V @ 15V, 20A	230 W	500µJ (on), 450µJ (off)	Standard	29 nC	12ns/103ns	400V, 20A, 20Ohm, 15V	25 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD