Page 43 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG7CH50UEF
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

Package: -

Stock2,128
IKP03N120H2XKSA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO220-3

Package: TO-220-3

Stock4,064
IXGH10N300
IXYS

IGBT 3000V 18A 100W TO247AD

Package: TO-247-3

Stock7,072
STGP7NB60HD
STMicroelectronics

IGBT 600V 14A 80W TO220

Package: TO-220-3

Stock5,936
ISL9V5036P3
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO220AB

Package: TO-220-3

Stock147,600
STGP7NB60KD
STMicroelectronics

IGBT 600V 14A 80W TO220

Package: TO-220-3

Stock108,024
IXYH16N250C
IXYS

IGBT 2500V 35A TO247AD

Package: TO-247-3

Stock5,952
IXGH90N60B3
IXYS

IGBT 600V 75A 660W TO247

Package: TO-247-3

Stock390,000
IXGH56N60B3D1
IXYS

IGBT 600V 330W TO247

Package: TO-247-3

Stock390,000
RJH65T14DPQ-A0#T0
Renesas Electronics America

IGBT TRENCH 650V 100A TO247A

Package: TO-247-3

Stock2,880
IXGQ20N120BD1
IXYS

IGBT 1200V 40A 190W TO3P

Package: TO-3P-3, SC-65-3

Stock7,312
STGF30V60DF
STMicroelectronics

IGBT BIPO 600V 30A TO-220

Package: -

Stock3,280
NGD18N40ACLBT4G
Littelfuse Inc.

IGBT 430V 15A 115W DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock100,968
AUIRGP50B60PD1
Infineon Technologies

IGBT 600V 75A 390W TO247AC

Package: TO-247-3

Stock4,528
IRG4BC20FPBF
Infineon Technologies

IGBT 600V 16A 60W TO220AB

Package: TO-220-3

Stock6,672
FGA25N120ANTDTU_F109
Fairchild/ON Semiconductor

IGBT 1200V 50A 312W TO3P

Package: TO-3P-3, SC-65-3

Stock6,480
FGH80N60FDTU
Fairchild/ON Semiconductor

IGBT 600V 80A 290W TO247

Package: TO-247-3

Stock6,108
STGWT80V60F
STMicroelectronics

IGBT 600V 120A 469W TO-3P

Package: TO-3P-3, SC-65-3

Stock8,124
SIGC42T60UNX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

Package: -

Request a Quote
STGB25N36LZAG
STMicroelectronics

DISCRETE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7CH50UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKP03N120H2XKSA1	Infineon Technologies	IGBT 1200V 9.6A 62.5W TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290µJ Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25°C: 9.2ns/281ns Test Condition: 800V, 3A, 82 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	Package: TO-220-3	Stock4,064	1200V	9.6A	9.9A	2.8V @ 15V, 3A	62.5W	290µJ	Standard	22nC	9.2ns/281ns	800V, 3A, 82 Ohm, 15V	42ns	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	PG-TO220-3
IXGH10N300	IXYS	IGBT 3000V 18A 100W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock7,072	3000V	18A	40A	5.2V @ 15V, 30A	100W	-	Standard	32nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
STGP7NB60HD	STMicroelectronics	IGBT 600V 14A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A Power - Max: 80W Switching Energy: 85µJ (off) Input Type: Standard Gate Charge: 42nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock5,936	600V	14A	56A	2.8V @ 15V, 7A	80W	85µJ (off)	Standard	42nC	15ns/75ns	480V, 7A, 10 Ohm, 15V	100ns	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
ISL9V5036P3	Fairchild/ON Semiconductor	IGBT 390V 46A 250W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 46A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Power - Max: 250W Switching Energy: - Input Type: Logic Gate Charge: 32nC Td (on/off) @ 25°C: -/10.8µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	Package: TO-220-3	Stock147,600	390V	46A	-	1.6V @ 4V, 10A	250W	-	Logic	32nC	-/10.8µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STGP7NB60KD	STMicroelectronics	IGBT 600V 14A 80W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A Power - Max: 80W Switching Energy: 140µJ (off) Input Type: Standard Gate Charge: 32.7nC Td (on/off) @ 25°C: 15ns/50ns Test Condition: 480V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock108,024	600V	14A	56A	2.8V @ 15V, 7A	80W	140µJ (off)	Standard	32.7nC	15ns/50ns	480V, 7A, 10 Ohm, 15V	50ns	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXYH16N250C	IXYS	IGBT 2500V 35A TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 126A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Power - Max: 500W Switching Energy: 4.75mJ (on), 3.9mJ (off) Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: 14ns/260ns Test Condition: 1250V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 19ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock5,952	2500V	35A	126A	4V @ 15V, 16A	500W	4.75mJ (on), 3.9mJ (off)	Standard	97nC	14ns/260ns	1250V, 16A, 10 Ohm, 15V	19ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IXGH90N60B3	IXYS	IGBT 600V 75A 660W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 90A Power - Max: 660W Switching Energy: 1.32mJ (on), 1.37mJ (off) Input Type: Standard Gate Charge: 172nC Td (on/off) @ 25°C: 31ns/150ns Test Condition: 480V, 60A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock390,000	600V	75A	500A	1.8V @ 15V, 90A	660W	1.32mJ (on), 1.37mJ (off)	Standard	172nC	31ns/150ns	480V, 60A, 2 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGH56N60B3D1	IXYS	IGBT 600V 330W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 350A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A Power - Max: 330W Switching Energy: 1.3mJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 138nC Td (on/off) @ 25°C: 26ns/155ns Test Condition: 480V, 44A, 5 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock390,000	600V	-	350A	1.8V @ 15V, 44A	330W	1.3mJ (on), 1.05mJ (off)	Standard	138nC	26ns/155ns	480V, 44A, 5 Ohm, 15V	100ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
RJH65T14DPQ-A0#T0	Renesas Electronics America	IGBT TRENCH 650V 100A TO247A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Power - Max: 250W Switching Energy: 1.3mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 38ns/125ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 250ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	Package: TO-247-3	Stock2,880	650V	100A	-	1.75V @ 15V, 50A	250W	1.3mJ (on), 1.2mJ (off)	Standard	80nC	38ns/125ns	400V, 50A, 10 Ohm, 15V	250ns	175°C (TJ)	Through Hole	TO-247-3	TO-247A
IXGQ20N120BD1	IXYS	IGBT 1200V 40A 190W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Power - Max: 190W Switching Energy: 2.1mJ (off) Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 20ns/270ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock7,312	1200V	40A	100A	3.4V @ 15V, 20A	190W	2.1mJ (off)	Standard	62nC	20ns/270ns	960V, 20A, 10 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
STGF30V60DF	STMicroelectronics	IGBT BIPO 600V 30A TO-220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock3,280	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGD18N40ACLBT4G	Littelfuse Inc.	IGBT 430V 15A 115W DPAK-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A Power - Max: 115W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock100,968	430V	15A	50A	2.5V @ 4V, 15A	115W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
AUIRGP50B60PD1	Infineon Technologies	IGBT 600V 75A 390W TO247AC IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Power - Max: 390W Switching Energy: 255µJ (on), 375µJ (off) Input Type: Standard Gate Charge: 205nC Td (on/off) @ 25°C: 30ns/130ns Test Condition: 390V, 33A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	Package: TO-247-3	Stock4,528	600V	75A	150A	2.85V @ 15V, 50A	390W	255µJ (on), 375µJ (off)	Standard	205nC	30ns/130ns	390V, 33A, 3.3 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4BC20FPBF	Infineon Technologies	IGBT 600V 16A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Power - Max: 60W Switching Energy: 70µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 24ns/190ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock6,672	600V	16A	64A	2V @ 15V, 9A	60W	70µJ (on), 600µJ (off)	Standard	27nC	24ns/190ns	480V, 9A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
FGA25N120ANTDTU_F109	Fairchild/ON Semiconductor	IGBT 1200V 50A 312W TO3P IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A Power - Max: 312W Switching Energy: 4.1mJ (on), 960µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 50ns/190ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock6,480	1200V	50A	90A	2.65V @ 15V, 50A	312W	4.1mJ (on), 960µJ (off)	Standard	200nC	50ns/190ns	600V, 25A, 10 Ohm, 15V	350ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
FGH80N60FDTU	Fairchild/ON Semiconductor	IGBT 600V 80A 290W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 290W Switching Energy: 1mJ (on), 520µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 21ns/126ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 36ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,108	600V	80A	160A	2.4V @ 15V, 40A	290W	1mJ (on), 520µJ (off)	Standard	120nC	21ns/126ns	400V, 40A, 10 Ohm, 15V	36ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
STGWT80V60F	STMicroelectronics	IGBT 600V 120A 469W TO-3P IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Power - Max: 469W Switching Energy: 1.8mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 448nC Td (on/off) @ 25°C: 60ns/220ns Test Condition: 400V, 80A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	Package: TO-3P-3, SC-65-3	Stock8,124	600V	120A	240A	2.3V @ 15V, 80A	469W	1.8mJ (on), 1mJ (off)	Standard	448nC	60ns/220ns	400V, 80A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
SIGC42T60UNX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 48ns/350ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	50 A	150 A	3.15V @ 15V, 50A	-	-	Standard	-	48ns/350ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
STGB25N36LZAG	STMicroelectronics	DISCRETE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 25 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 25.7 nC Td (on/off) @ 25°C: 1.1µs/7.4µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	Package: -	Request a Quote	350 V	25 A	50 A	1.25V @ 4V, 6A	150 W	-	Logic	25.7 nC	1.1µs/7.4µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
RJQ7031PJWS-00-W0	Renesas Electronics Corporation	POWER TRS1 CAR POWER IGBT DIO SA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGC20T60TEX7SA1	Infineon Technologies	IGBT 600V 20A WAFER IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGT30NS65DGC9	Rohm Semiconductor	IGBT TRENCH FIELD 650V 30A TO262 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 133 W Switching Energy: - Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 55 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262	Package: -	Stock8,718	650 V	30 A	45 A	2.1V @ 15V, 15A	133 W	-	Standard	32 nC	18ns/64ns	400V, 15A, 10Ohm, 15V	55 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262
SIGC42T60NCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 43ns/130ns Test Condition: 300V, 50A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	43ns/130ns	300V, 50A, 3.3Ohm, 15V	-	-55°C ~ 150°C	Surface Mount	Die	Die
FGH40T70SHD-F155	onsemi	650V FS GEN3 TRENCH IGBT IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 700 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Power - Max: 268 W Switching Energy: 1.15mJ (on), 271µJ (off) Input Type: Standard Gate Charge: 69 nC Td (on/off) @ 25°C: 22ns/66ns Test Condition: 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr): 37 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: -	Request a Quote	700 V	80 A	120 A	2.15V @ 15V, 40A	268 W	1.15mJ (on), 271µJ (off)	Standard	69 nC	22ns/66ns	400V, 40A, 6Ohm, 15V	37 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IKFW60N65ES5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 77A HSIP247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 77 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Power - Max: 138 W Switching Energy: 1.23mJ (on), 550µJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 20ns/127ns Test Condition: 400V, 50A, 8.2Ohm, 15V Reverse Recovery Time (trr): 77 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-HSIP247-3-2	Package: -	Stock15	650 V	77 A	200 A	1.7V @ 15V, 50A	138 W	1.23mJ (on), 550µJ (off)	Standard	120 nC	20ns/127ns	400V, 50A, 8.2Ohm, 15V	77 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2
LGD18N45TH	Littelfuse Inc.	IGBT 500V 18A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 18 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: - Power - Max: 115 W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: 0.42µs/2.9µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	500 V	18 A	50 A	-	115 W	-	Logic	-	0.42µs/2.9µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
HGT1S3N60C3D	Harris Corporation	6A, 600V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A Power - Max: 33 W Switching Energy: - Input Type: Standard Gate Charge: 13.8 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: I2PAK (TO-262)	Package: -	Request a Quote	600 V	6 A	24 A	2V @ 15V, 3A	33 W	-	Standard	13.8 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	I2PAK (TO-262)