Page 62 - Transistors - IGBTs - Single | Discrete Semiconductor Products

IRG7PK42UD1-EPBF
Infineon Technologies

IGBT 1200V ULTRA FAST TO247

Package: -

Stock3,696
IHY20N120R3XKSA1
Infineon Technologies

IGBT 1200V 40A 310W TO247HC-3

Package: TO-247-3 Variant

Stock3,504
IRG4IBC20W
Infineon Technologies

IGBT 600V 11.8A 34W TO220FP

Package: TO-220-3 Full Pack

Stock134,724
RJH1CF5RDPQ-80#T2
Renesas Electronics America

IGBT 1200V 50A 192.3W TO247

Package: TO-247-3

Stock2,880
IXGP30N60B4D1
IXYS

IGBT 600V 56A 190W TO220

Package: TO-220-3

Stock5,120
IXGH40N60A
IXYS

IGBT 600V 75A 250W TO247AD

Package: TO-247-3

Stock2,400
FGP5N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 10A 81W TO220

Package: TO-220-3

Stock2,592
IXGK120N60C2
IXYS

IGBT 600V 75A 830W TO264

Package: TO-264-3, TO-264AA

Stock3,552
IXGC16N60B2
IXYS

IGBT 600V 28A 63W ISOPLUS220

Package: ISOPLUS220?

Stock2,784
IXSP20N60B2D1
IXYS

IGBT 600V 35A 190W TO220

Package: TO-220-3

Stock2,816
IKA15N65ET6XKSA1
Infineon Technologies

IGBT 650V 15A TO220-3

Package: -

Stock2,288
IXXH150N60C3
IXYS

IGBT 600V TO247

Package: TO-247-3

Stock6,208
NGTD30T120F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

Package: Die

Stock3,552
NGTD28T65F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

Package: Die

Stock6,352
IXGP12N100
IXYS

IGBT 1000V 24A 100W TO220AB

Package: TO-220-3

Stock6,336
STGW60H65F
STMicroelectronics

IGBT 650V 120A 360W TO247

Package: TO-247-3

Stock6,624
NGTB40N120SWG
ON Semiconductor

IGBT 40A 1200V TO-247

Package: TO-247-3

Stock7,888
RGT30NL65DGTL
Rohm Semiconductor

IGBT TRENCH FIELD 650V 30A LPDS

Package: -

Request a Quote
SIGC156T60NR2CX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

Package: -

Request a Quote
SIGC57T120R3LEX1SA3
Infineon Technologies

IGBT 1200V 50A DIE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7PK42UD1-EPBF	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock3,696	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IHY20N120R3XKSA1	Infineon Technologies	IGBT 1200V 40A 310W TO247HC-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Power - Max: 310W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 211nC Td (on/off) @ 25°C: -/387ns Test Condition: 600V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3	Package: TO-247-3 Variant	Stock3,504	1200V	40A	60A	1.7V @ 15V, 20A	310W	950µJ (off)	Standard	211nC	-/387ns	600V, 20A, 15 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3 Variant	PG-TO247HC-3
IRG4IBC20W	Infineon Technologies	IGBT 600V 11.8A 34W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11.8A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Power - Max: 34W Switching Energy: 60µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: 22ns/110ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	Package: TO-220-3 Full Pack	Stock134,724	600V	11.8A	52A	2.6V @ 15V, 6.5A	34W	60µJ (on), 80µJ (off)	Standard	26nC	22ns/110ns	480V, 6.5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
RJH1CF5RDPQ-80#T2	Renesas Electronics America	IGBT 1200V 50A 192.3W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 192.3W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock2,880	1200V	50A	-	2.4V @ 15V, 25A	192.3W	-	Standard	-	-	-	-	150°C (TJ)	Through Hole	TO-247-3	TO-247
IXGP30N60B4D1	IXYS	IGBT 600V 56A 190W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A Power - Max: 190W Switching Energy: 440µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock5,120	600V	56A	156A	1.7V @ 15V, 24A	190W	440µJ (on), 700µJ (off)	Standard	77nC	21ns/200ns	400V, 24A, 10 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH40N60A	IXYS	IGBT 600V 75A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A Power - Max: 250W Switching Energy: 3mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 100ns/600ns Test Condition: 480V, 40A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock2,400	600V	75A	150A	3V @ 15V, 40A	250W	3mJ (off)	Standard	200nC	100ns/600ns	480V, 40A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
FGP5N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 10A 81W TO220 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A Power - Max: 81W Switching Energy: 75µJ (on), 59µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 6ns/44ns Test Condition: 400V, 5A, 20 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	Package: TO-220-3	Stock2,592	600V	10A	15A	2.4V @ 15V, 5A	81W	75µJ (on), 59µJ (off)	Standard	19.5nC	6ns/44ns	400V, 5A, 20 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXGK120N60C2	IXYS	IGBT 600V 75A 830W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 830W Switching Energy: 1.7mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 40ns/120ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	Package: TO-264-3, TO-264AA	Stock3,552	600V	75A	500A	2.5V @ 15V, 100A	830W	1.7mJ (on), 1mJ (off)	Standard	370nC	40ns/120ns	400V, 80A, 1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
IXGC16N60B2	IXYS	IGBT 600V 28A 63W ISOPLUS220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A Power - Max: 63W Switching Energy: 150mJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 25ns/70ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	Package: ISOPLUS220?	Stock2,784	600V	28A	100A	2.3V @ 15V, 12A	63W	150mJ (off)	Standard	32nC	25ns/70ns	400V, 12A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXSP20N60B2D1	IXYS	IGBT 600V 35A 190W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Power - Max: 190W Switching Energy: 380µJ (off) Input Type: Standard Gate Charge: 33nC Td (on/off) @ 25°C: 30ns/116ns Test Condition: 480V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock2,816	600V	35A	60A	2.5V @ 15V, 16A	190W	380µJ (off)	Standard	33nC	30ns/116ns	480V, 16A, 10 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IKA15N65ET6XKSA1	Infineon Technologies	IGBT 650V 15A TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock2,288	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXXH150N60C3	IXYS	IGBT 600V TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 300A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: 1360W Switching Energy: 3.4mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 75A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	Package: TO-247-3	Stock6,208	600V	300A	150A	2.5V @ 15V, 150A	1360W	3.4mJ (on), 1.8mJ (off)	Standard	200nC	34ns/120ns	400V, 75A, 2 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
NGTD30T120F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock3,552	1200V	-	200A	2.4V @ 15V, 40A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD28T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock6,352	650V	-	200A	2V @ 15V, 75A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXGP12N100	IXYS	IGBT 1000V 24A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Power - Max: 100W Switching Energy: 2.5mJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 100ns/850ns Test Condition: 800V, 12A, 120 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock6,336	1000V	24A	48A	3.5V @ 15V, 12A	100W	2.5mJ (off)	Standard	65nC	100ns/850ns	800V, 12A, 120 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGW60H65F	STMicroelectronics	IGBT 650V 120A 360W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Power - Max: 360W Switching Energy: 750µJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 217nC Td (on/off) @ 25°C: 65ns/180ns Test Condition: 400V, 60A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,624	650V	120A	240A	1.9V @ 15V, 60A	360W	750µJ (on), 1.05mJ (off)	Standard	217nC	65ns/180ns	400V, 60A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120SWG	ON Semiconductor	IGBT 40A 1200V TO-247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 535W Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock7,888	1200V	80A	200A	2.4V @ 15V, 40A	535W	3.4mJ (on), 1.1mJ (off)	Standard	313nC	116ns/286ns	600V, 40A, 10 Ohm, 15V	240ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
RGT30NL65DGTL	Rohm Semiconductor	IGBT TRENCH FIELD 650V 30A LPDS IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 133 W Switching Energy: - Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 55 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS	Package: -	Request a Quote	650 V	30 A	45 A	2.1V @ 15V, 15A	133 W	-	Standard	32 nC	18ns/64ns	400V, 15A, 10Ohm, 15V	55 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS
SIGC156T60NR2CX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 200 A Current - Collector Pulsed (Icm): 600 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 180ns/285ns Test Condition: 300V, 200A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	200 A	600 A	2.5V @ 15V, 200A	-	-	Standard	-	180ns/285ns	300V, 200A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC57T120R3LEX1SA3	Infineon Technologies	IGBT 1200V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	1200 V	-	150 A	2.1V @ 15V, 50A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
RJP3045DPP-B1-T2F	Renesas Electronics Corporation	HIGH SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGTM10N40A	Harris Corporation	N CHANNEL IGBT FOR SWITCHING APP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA Supplier Device Package: TO-3	Package: -	Request a Quote	400 V	10 A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-204AA	TO-3
HGTG27N60C3DR	Harris Corporation	UFS SERIES N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 54 A Current - Collector Pulsed (Icm): 108 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A Power - Max: 208 W Switching Energy: - Input Type: Standard Gate Charge: 212 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: -	Request a Quote	600 V	54 A	108 A	2.2V @ 15V, 27A	208 W	-	Standard	212 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IKW75N65ET7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Power - Max: 333 W Switching Energy: 2.17mJ (on), 1.23mJ (off) Input Type: Standard Gate Charge: 435 nC Td (on/off) @ 25°C: 28ns/310ns Test Condition: 400V, 75A, 4.7Ohm, 15V Reverse Recovery Time (trr): 100 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: -	Stock1,362	650 V	80 A	225 A	1.65V @ 15V, 75A	333 W	2.17mJ (on), 1.23mJ (off)	Standard	435 nC	28ns/310ns	400V, 75A, 4.7Ohm, 15V	100 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
SIGC25T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 44ns/324ns Test Condition: 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	30 A	90 A	2.5V @ 15V, 30A	-	-	Standard	-	44ns/324ns	400V, 30A, 11Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
AOT10B60M1	Alpha & Omega Semiconductor Inc.	IGBT 10A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 25 A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A Power - Max: 83 W Switching Energy: 190µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 14 nC Td (on/off) @ 25°C: 5.5ns/61ns Test Condition: 400V, 10A, 30Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: -	Request a Quote	600 V	20 A	25 A	2.9V @ 15V, 10A	83 W	190µJ (on), 140µJ (off)	Standard	14 nC	5.5ns/61ns	400V, 10A, 30Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
SIGC28T60EX1SA4	Infineon Technologies	IGBT TRENCH FS 600V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	50 A	150 A	1.85V @ 15V, 50A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXYH55N120C4H1	IXYS	IGBT TRENCH 1200V 126A TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 126 A Current - Collector Pulsed (Icm): 290 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A Power - Max: 650 W Switching Energy: 3.5mJ (on), 1.34mJ (off) Input Type: Standard Gate Charge: 114 nC Td (on/off) @ 25°C: 20ns/180ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 180 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	Package: -	Request a Quote	1200 V	126 A	290 A	2.5V @ 15V, 55A	650 W	3.5mJ (on), 1.34mJ (off)	Standard	114 nC	20ns/180ns	600V, 40A, 5Ohm, 15V	180 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)