Page 64 - Transistors - IGBTs - Single | Discrete Semiconductor Products

SKW07N120FKSA1
Infineon Technologies

IGBT 1200V 16.5A 125W TO247

Package: TO-247-3

Stock3,680
IRGSL6B60KPBF
Infineon Technologies

IGBT 600V 13A 90W TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,984
IRG4PSH71KPBF
Infineon Technologies

IGBT 1200V 78A 350W SUPER247

Package: TO-274AA

Stock53,124
RJH1CF6RDPQ-80#T2
Renesas Electronics America

IGBT 1200V 55A 227.2W TO247

Package: TO-247-3

Stock2,544
IXGR60N60B2D1
IXYS

IGBT 600V 75A 250W ISOPLUS247

Package: TO-247-3

Stock3,376
HGTP2N120CN
Fairchild/ON Semiconductor

IGBT 1200V 13A 104W TO220AB

Package: TO-220-3

Stock179,580
IXGH50N60A
IXYS

IGBT 600V 75A 250W TO247AD

Package: TO-247-3

Stock7,696
IGB50N65H5ATMA1
Infineon Technologies

IGBT PRODUCTS

Package: -

Stock5,632
IXYF30N450
IXYS

IGBT 450V

Package: i4-Pac?-5 (3 leads)

Stock2,848
IXBH14N250
IXYS

IGBT 2500V TO247AD

Package: TO-247-3

Stock3,408
IXGR55N120A3H1
IXYS

IGBT 1200V 70A 200W ISOPLUS247

Package: TO-247-3

Stock3,344
IXGH28N120BD1
IXYS

IGBT 1200V 50A 250W TO247

Package: TO-247-3

Stock480,156
APT15GP60BDLG
Microsemi Corporation

IGBT 600V 56A 250W TO247

Package: TO-247-3

Stock6,960
STGP20M65DF2
STMicroelectronics

IGBT TRENCH 650V 40A TO220

Package: TO-220-3

Stock5,344
APT54GA60B
Microsemi Corporation

IGBT 600V 96A 416W TO-247

Package: TO-247-3

Stock4,736
AOK40B65H1
Alpha & Omega Semiconductor Inc.

IGBT 650V 40A TO247

Package: TO-247-3

Stock6,372
NGTB40N120IHRWG
ON Semiconductor

IGBT 1200V 80A 384W TO247

Package: TO-247-3

Stock6,660
HGTP10N50E1D
Harris Corporation

17.5A, 500V, N-CHANNEL IGBT

Package: -

Request a Quote
IXGA20N120B3-TRL
IXYS

IXGA20N120B3 TRL

Package: -

Request a Quote
MGY40N60
onsemi

IGBT 66A, 600V, N CHANNEL, TO 26

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SKW07N120FKSA1	Infineon Technologies	IGBT 1200V 16.5A 125W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 16.5A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A Power - Max: 125W Switching Energy: 1mJ Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 27ns/440ns Test Condition: 800V, 8A, 47 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: TO-247-3	Stock3,680	1200V	16.5A	27A	3.6V @ 15V, 8A	125W	1mJ	Standard	70nC	27ns/440ns	800V, 8A, 47 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRGSL6B60KPBF	Infineon Technologies	IGBT 600V 13A 90W TO262 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,984	600V	13A	26A	2.2V @ 15V, 5A	90W	110µJ (on), 135µJ (off)	Standard	18.2nC	25ns/215ns	400V, 5A, 100 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IRG4PSH71KPBF	Infineon Technologies	IGBT 1200V 78A 350W SUPER247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A Power - Max: 350W Switching Energy: 2.35mJ (on), 3.14mJ (off) Input Type: Standard Gate Charge: 410nC Td (on/off) @ 25°C: 45ns/220ns Test Condition: 960V, 42A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247 (TO-274AA)	Package: TO-274AA	Stock53,124	1200V	78A	156A	3.9V @ 15V, 42A	350W	2.35mJ (on), 3.14mJ (off)	Standard	410nC	45ns/220ns	960V, 42A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-274AA	SUPER-247 (TO-274AA)
RJH1CF6RDPQ-80#T2	Renesas Electronics America	IGBT 1200V 55A 227.2W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 227.2W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock2,544	1200V	55A	-	2.3V @ 15V, 30A	227.2W	-	Standard	-	-	-	-	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXGR60N60B2D1	IXYS	IGBT 600V 75A 250W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 250W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 28ns/160ns Test Condition: 400V, 50A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247?	Package: TO-247-3	Stock3,376	600V	75A	300A	2V @ 15V, 50A	250W	1mJ (off)	Standard	170nC	28ns/160ns	400V, 50A, 3.3 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ISOPLUS247?
HGTP2N120CN	Fairchild/ON Semiconductor	IGBT 1200V 13A 104W TO220AB IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Power - Max: 104W Switching Energy: 96µJ (on), 355µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 25ns/205ns Test Condition: 960V, 2.6A, 51 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Package: TO-220-3	Stock179,580	1200V	13A	20A	2.4V @ 15V, 2.6A	104W	96µJ (on), 355µJ (off)	Standard	30nC	25ns/205ns	960V, 2.6A, 51 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH50N60A	IXYS	IGBT 600V 75A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 250W Switching Energy: 4.8mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 480V, 50A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock7,696	600V	75A	200A	2.7V @ 15V, 50A	250W	4.8mJ (off)	Standard	200nC	50ns/200ns	480V, 50A, 2.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IGB50N65H5ATMA1	Infineon Technologies	IGBT PRODUCTS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock5,632	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXYF30N450	IXYS	IGBT 450V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 4500V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 190A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Power - Max: 230W Switching Energy: - Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 38ns/168ns Test Condition: 960V, 30A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5 (3 leads)	Stock2,848	4500V	23A	190A	3.9V @ 15V, 30A	230W	-	Standard	88nC	38ns/168ns	960V, 30A, 15 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5 (3 leads)	ISOPLUS i4-PAC?
IXBH14N250	IXYS	IGBT 2500V TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	Package: TO-247-3	Stock3,408	2500V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-247-3	TO-247AD (IXBH)
IXGR55N120A3H1	IXYS	IGBT 1200V 70A 200W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 330A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A Power - Max: 200W Switching Energy: 5.1mJ (on), 13.3mJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 23ns/365ns Test Condition: 960V, 55A, 3 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247?	Package: TO-247-3	Stock3,344	1200V	70A	330A	2.35V @ 15V, 55A	200W	5.1mJ (on), 13.3mJ (off)	Standard	185nC	23ns/365ns	960V, 55A, 3 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	ISOPLUS247?
IXGH28N120BD1	IXYS	IGBT 1200V 50A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A Power - Max: 250W Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: 30ns/210ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	Package: TO-247-3	Stock480,156	1200V	50A	150A	3.5V @ 15V, 28A	250W	2.2mJ (off)	Standard	92nC	30ns/210ns	960V, 28A, 5 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
APT15GP60BDLG	Microsemi Corporation	IGBT 600V 56A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,960	600V	56A	65A	2.7V @ 15V, 15A	250W	130µJ (on), 121µJ (off)	Standard	55nC	8ns/29ns	400V, 15A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
STGP20M65DF2	STMicroelectronics	IGBT TRENCH 650V 40A TO220 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 166W Switching Energy: 140µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 26ns/108ns Test Condition: 400V, 20A, 12 Ohm, 15V Reverse Recovery Time (trr): 166ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock5,344	650V	40A	80A	2V @ 15V, 20A	166W	140µJ (on), 560µJ (off)	Standard	63nC	26ns/108ns	400V, 20A, 12 Ohm, 15V	166ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
APT54GA60B	Microsemi Corporation	IGBT 600V 96A 416W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 161A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 416W Switching Energy: 534µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 158nC Td (on/off) @ 25°C: 17ns/112ns Test Condition: 400V, 32A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	Package: TO-247-3	Stock4,736	600V	96A	161A	2.5V @ 15V, 32A	416W	534µJ (on), 466µJ (off)	Standard	158nC	17ns/112ns	400V, 32A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
AOK40B65H1	Alpha & Omega Semiconductor Inc.	IGBT 650V 40A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 300W Switching Energy: 1.27mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 41ns/130ns Test Condition: 400V, 40A, 7.5 Ohm, 15V Reverse Recovery Time (trr): 346ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,372	650V	80A	120A	2.4V @ 15V, 40A	300W	1.27mJ (on), 460µJ (off)	Standard	63nC	41ns/130ns	400V, 40A, 7.5 Ohm, 15V	346ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120IHRWG	ON Semiconductor	IGBT 1200V 80A 384W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A Power - Max: 384W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: -/230ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: TO-247-3	Stock6,660	1200V	80A	120A	2.55V @ 15V, 40A	384W	950µJ (off)	Standard	225nC	-/230ns	600V, 40A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
HGTP10N50E1D	Harris Corporation	17.5A, 500V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 17.5 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A Power - Max: 75 W Switching Energy: - Input Type: Standard Gate Charge: 19 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: -	Request a Quote	500 V	17.5 A	-	3.2V @ 20V, 17.5A	75 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
IXGA20N120B3-TRL	IXYS	IXGA20N120B3 TRL IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 36 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Power - Max: 180 W Switching Energy: 920µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 51 nC Td (on/off) @ 25°C: 16ns/150ns Test Condition: 600V, 16A, 15Ohm, 15V Reverse Recovery Time (trr): 31 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	Package: -	Request a Quote	1200 V	36 A	80 A	3.1V @ 15V, 16A	180 W	920µJ (on), 560µJ (off)	Standard	51 nC	16ns/150ns	600V, 16A, 15Ohm, 15V	31 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
MGY40N60	onsemi	IGBT 66A, 600V, N CHANNEL, TO 26 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXXT100N75B4HV	IXYS	IGBT DISCRETE TO-268HV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK50B65H1	Alpha & Omega Semiconductor Inc.	IGBT 650V 50A TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Power - Max: 375 W Switching Energy: 1.92mJ (on), 850µJ (off) Input Type: Standard Gate Charge: 76 nC Td (on/off) @ 25°C: 37ns/141ns Test Condition: 400V, 50A, 6Ohm, 15V Reverse Recovery Time (trr): 261 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: -	Request a Quote	650 V	100 A	150 A	2.4V @ 15V, 50A	375 W	1.92mJ (on), 850µJ (off)	Standard	76 nC	37ns/141ns	400V, 50A, 6Ohm, 15V	261 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
SIGC11T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 28ns/198ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	10 A	30 A	2.4V @ 15V, 10A	-	-	Standard	-	28ns/198ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKW50N65RH5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 305 W Switching Energy: 230µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 22ns/180ns Test Condition: 400V, 25A, 12Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	Package: -	Stock288	650 V	80 A	200 A	2.1V @ 15V, 50A	305 W	230µJ (on), 180µJ (off)	Standard	120 nC	22ns/180ns	400V, 25A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
SIGC42T60NCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 43ns/130ns Test Condition: 300V, 50A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	43ns/130ns	300V, 50A, 3.3Ohm, 15V	-	-55°C ~ 150°C	Surface Mount	Die	Die
AIMDQ75R040M1HXUMA1	Infineon Technologies	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock2,250	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK30B135D2	Alpha & Omega Semiconductor Inc.	IGBT 1350V 30A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247
IRGSL15B60KDPBF-INF	Infineon Technologies	IGBT W/ULTRAFAST SOFT RECOVERY D IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 62 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208 W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 56 nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262	Package: -	Request a Quote	600 V	31 A	62 A	2.2V @ 15V, 15A	208 W	220µJ (on), 340µJ (off)	Standard	56 nC	34ns/184ns	400V, 15A, 22Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262