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Vishay Siliconix |
JFET N-CH 30V 360MW TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock6,832 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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ON Semiconductor |
JFET N-CH 30V 0.35W TO-92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
- Resistance - RDS(On): 100 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,352 |
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30V | 30V | 5mA @ 15V | - | 500mV @ 10nA | 10pF @ 15V (VGS) | 100 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANSISTOR JFET 8PLLCC
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,520 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
JFET N-CH 30V 0.225W SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
- Resistance - RDS(On): 30 Ohm
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock36,000 |
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30V | 30V | 50mA @ 15V | - | 4V @ 10nA | 14pF @ 15V (VGS) | 30 Ohm | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: 3-USFP
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Package: SOT-1123 |
Stock7,504 |
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- | - | 140µA @ 2V | 1mA | 100mV @ 1µA | 3.1pF @ 2V | - | 30mW | 150°C (TJ) | Surface Mount | SOT-1123 | 3-USFP |
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Panasonic Electronic Components |
JFET N-CH 30MA 150MW SMINI-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 55V
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
- Current Drain (Id) - Max: 30mA
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10µA
- Input Capacitance (Ciss) (Max) @ Vds: 6.5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2
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Package: SC-85 |
Stock42,000 |
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- | 55V | 1mA @ 10V | 30mA | 5V @ 10µA | 6.5pF @ 10V | - | 150mW | 150°C (TJ) | Surface Mount | SC-85 | SMini3-F2 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 12 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,192 |
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25V | - | 40mA @ 15V | - | 2V @ 10nA | - | 12 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,752 |
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30V | - | 4mA @ 15V | - | 6V @ 1nA | - | - | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 60 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,912 |
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30V | - | 25mA @ 20V | - | 2V @ 1nA | 14pF @ 20V | 60 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
JFET P-CH 30V 0.3W SOT23
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Resistance - RDS(On): 85 Ohm
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,368 |
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30V | 30V | 20mA @ 15V | - | 5V @ 10nA | 8pF @ 10V (VGS) | 85 Ohm | 300mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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ON Semiconductor |
JFET 2N-CH 0.3W MCPH5
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
- Current Drain (Id) - Max: 50mA
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds: 10.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-SMD, Flat Leads
- Supplier Device Package: 5-MCPH
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Package: 5-SMD, Flat Leads |
Stock4,176 |
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- | - | 10mA @ 5V | 50mA | 300mV @ 100µA | 10.5pF @ 5V | - | 300mW | 150°C (TJ) | Surface Mount | 5-SMD, Flat Leads | 5-MCPH |
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Fairchild/ON Semiconductor |
JFET P-CH 40V 0.225W SOT23
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock89,280 |
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40V | - | 4mA @ 15V | - | 1.8V @ 1µA | 7pF @ 15V | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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NXP |
JFET N-CH 10MA 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
- Current Drain (Id) - Max: 10mA
- Voltage - Cutoff (VGS off) @ Id: 1.2V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,548 |
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- | 25V | 200µA @ 10V | 10mA | 1.2V @ 0.5nA | 5pF @ 10V | - | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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Central Semiconductor Corp |
JFET P-CH 40V 0.31W TO-92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 310mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock307,080 |
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40V | - | 1mA @ 15V | - | 750mV @ 1µA | 7pF @ 15V | - | 310mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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NXP |
JFET N-CH 40V 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohm
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock98,394 |
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40V | 40V | 5mA @ 20V | - | 500mV @ 1nA | 14pF @ 20V | 100 Ohm | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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NXP |
JFET P-CH 30V 0.3W SOT23
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Resistance - RDS(On): 300 Ohm
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock132,228 |
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30V | 30V | 1.5mA @ 15V | - | 800mV @ 10nA | 8pF @ 10V (VGS) | 300 Ohm | 300mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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InterFET |
JFET N-Channel -50V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 50 V
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
- Resistance - RDS(On): 550 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 50 V | 2 mA @ 15 V | - | 2 V @ 100 nA | 3pF @ 15V | 550 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Microchip Technology |
JFET N-CH
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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InterFET |
JFET N-Channel -30V Low Noise
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Resistance - RDS(On): 42 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
|
- | 30 V | 14 mA @ 10 V | - | 1.2 V @ 1 nA | 15pF @ 10V | 42 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V TO78-6
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: - |
Stock1,491 |
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25 V | - | 7 mA @ 10 V | - | 1 V @ 1 nA | 5pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Microchip Technology |
JFET P-CH 30V TO18
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
|
Package: - |
Request a Quote |
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30 V | 30 V | 15 mA @ 15 V | - | 3 V @ 1 nA | 25pF @ 15V | 100 Ohms | 500 mW | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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InterFET |
JFET N-Channel -50V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 50 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
- Resistance - RDS(On): 450 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
- | 50 V | 4.5 mA @ 15 V | - | 3.5 V @ 100 nA | 3pF @ 15V | 450 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Microchip Technology |
JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
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|
InterFET |
JFET N-Channel -30V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
- Resistance - RDS(On): 180 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
- | 30 V | 8 mA @ 15 V | - | 3 V @ 1 nA | 3.5pF @ 15V | 180 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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InterFET |
JFET N-Channel -35V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 35 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
- Resistance - RDS(On): 180 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: - |
Request a Quote |
|
- | 35 V | 8 mA @ 15 V | - | 3 V @ 1 nA | 3.5pF @ 15V | 180 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Motorola |
JFET N-CH 40V TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 0V
- Resistance - RDS(On): 25 Ohms
- Power - Max: 360 mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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40 V | 40 V | 50 mA @ 15 V | - | 4 V @ 500 pA | 18pF @ 0V | 25 Ohms | 360 mW | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V 8SOIC
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock285 |
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25 V | - | 7 mA @ 10 V | - | 1 V @ 1 nA | 5pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V TO71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
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Package: - |
Stock750 |
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25 V | - | - | - | - | 3pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 Metal Can | TO-71 |