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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,312 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
JFET P-CH 30V TO-206AA
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock5,248 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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ON Semiconductor |
JFET N-CH 10MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: 10mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-USFP
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Package: 3-SMD, Flat Leads |
Stock3,440 |
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- | - | 1.2mA @ 10V | 10mA | 180mV @ 1µA | 4pF @ 10V | - | 30mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-USFP |
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ON Semiconductor |
JFET N-CH 50MA 300MW SPA
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 15V
- Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
- Current Drain (Id) - Max: 50mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-72
- Supplier Device Package: 3-SPA
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Package: SC-72 |
Stock4,448 |
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- | 15V | 14.5mA @ 5V | 50mA | 600mV @ 100µA | 10pF @ 5V | - | 300mW | 125°C (TJ) | Through Hole | SC-72 | 3-SPA |
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ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,824 |
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35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 225MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,048 |
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- | 25V | 4mA @ 10V | - | 5V @ 0.5nA | 5pF @ 10V | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,424 |
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30V | - | 6mA @ 15V | - | 1.5V @ 1nA | - | - | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 5 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,608 |
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25V | - | 150mA @ 15V | - | 4V @ 3nA | 30pF @ 10V (VGS) | 5 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 40V 0.625W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,296 |
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40V | - | 200µA @ 20V | - | 300mV @ 10nA | - | - | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
- Resistance - RDS(On): 30 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock9,912 |
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30V | - | 50mA @ 20V | - | - | 10pF @ 12V (VGS) | 30 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
JFET N-CH 40V 400MW TO92-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Resistance - RDS(On): 100 Ohm
- Power - Max: 400mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,240 |
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40V | 40V | 2mA @ 15V | - | 500mV @ 1µA | 6pF @ 10V (VGS) | 100 Ohm | 400mW | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
JFET N-CH 40V 0.25W SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Current Drain (Id) - Max: 20mA
- Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 25 Ohm
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,032 |
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40V | 40V | 50mA @ 15V | 20mA | 4V @ 0.5nA | - | 25 Ohm | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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ON Semiconductor |
JFET N-CH 30V 0.225W SOT23-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
- Resistance - RDS(On): 100 Ohm
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock36,000 |
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30V | 30V | 30mA @ 15V | - | 3V @ 10nA | 14pF @ 15V (VGS) | 100 Ohm | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 35V 350MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 100 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,467,984 |
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35V | - | 2mA @ 15V | - | 500mV @ 1µA | - | 100 Ohm | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V TO71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
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Package: - |
Stock1,500 |
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25 V | - | 7 mA @ 10 V | - | 1 V @ 1 nA | 5pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 Metal Can | TO-71 |
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InterFET |
JFET N-Channel -20V Low Noise
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 20 V
- Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Resistance - RDS(On): 42 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 20 V | 14 mA @ 10 V | - | 1.2 V @ 1 nA | 15pF @ 10V | 42 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Microchip Technology |
JFET P-CH 30V UB
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | - | 1 mA @ 5 V | - | 750 mV @ 1 µA | 10pF @ 5V | - | 300 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Central Semiconductor Corp |
IC JFET P-CH SOT23-3
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Linear Integrated Systems, Inc. |
JFET N-CH 40V SOT23-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock16,689 |
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40 V | - | 200 µA @ 15 V | - | 300 mV @ 10 nA | 4.5pF @ 15V | - | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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NTE Electronics, Inc |
JFET P-CH 20V TO72
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 20 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
- Resistance - RDS(On): 800 Ohms
- Power - Max: 300 mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
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Package: - |
Request a Quote |
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20 V | - | 2 mA @ 10 V | - | - | 20pF @ 10V | 800 Ohms | 300 mW | - | Through Hole | TO-206AF, TO-72-4 Metal Can | TO-72 |
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Linear Integrated Systems, Inc. |
JFET N-CH 30V TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Stock3,018 |
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30 V | - | 30 µA @ 10 V | - | 3 V @ 1 nA | 3pF @ 10V | - | 300 mW | -55°C ~ 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Microchip Technology |
JFET N-CH 40V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 80 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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40 V | 40 V | 8 mA @ 20 V | - | - | 16pF @ 20V | 80 Ohms | 360 mW | -65°C ~ 175°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |