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Microsemi Corporation |
N CHANNEL JFET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 40 Ohm
- Power - Max: 360mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock4,672 |
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30V | 30V | 100mA @ 15V | - | 6V @ 500pA | 18pF @ 10V | 40 Ohm | 360mW | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,336 |
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Vishay Siliconix |
JFET N-CH 25V 0.3W TO-52
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
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Package: TO-206AC, TO-52-3 Metal Can |
Stock4,480 |
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25V | - | 150mA @ 15V | - | 4V @ 3nA | 30pF @ 0V | - | 300mW | -55°C ~ 150°C (TJ) | Through Hole | TO-206AC, TO-52-3 Metal Can | TO-206AC (TO-52) |
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Vishay Siliconix |
MOSFET N-CH 40V .1NA TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohm
- Power - Max: 1.8W
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock4,896 |
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40V | - | 5mA @ 20V | - | 500mV @ 1nA | 14pF @ 20V | 100 Ohm | 1.8W | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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NXP |
TRANSISTOR JFET 8PLLCC
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,976 |
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Panasonic Electronic Components |
JFET N-CH 2MA 100MW SSSMINI-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 20V
- Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V
- Current Drain (Id) - Max: 2mA
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: -20°C ~ 80°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2
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Package: SOT-723 |
Stock5,328 |
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- | 20V | 107µA @ 2V | 2mA | - | - | - | 100mW | -20°C ~ 80°C (TA) | Surface Mount | SOT-723 | SSSMini3-F2 |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.35W TO92
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
- Resistance - RDS(On): 150 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,096 |
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30V | - | 5mA @ 20V | - | 5V @ 1µA | 45pF @ 15V | 150 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 50 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,560 |
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35V | - | 5mA @ 15V | - | 1V @ 1µA | - | 50 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,792 |
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30V | - | 500µA @ 15V | - | 4V @ 1nA | - | - | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 20V 0.15W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 20V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,008 |
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20V | - | 100µA @ 5V | 1mA | 600mV @ 1µA | 3.5pF @ 5V | - | 150mW | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 25V 0.31W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 310mW
- Operating Temperature: 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock50,520 |
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25V | 25V | 2mA @ 15V | - | 1V @ 10nA | 7pF @ 15V | - | 310mW | 135°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
JFET N-CH 40V 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 60 Ohm
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,440 |
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40V | 40V | 8mA @ 15V | - | 800mV @ 0.5nA | - | 60 Ohm | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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Fairchild/ON Semiconductor |
JFET P-CH 40V 0.225W SOT23
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock128,556 |
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40V | - | 1mA @ 15V | - | 750mV @ 1µA | 7pF @ 15V | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Microchip Technology |
JFET N-CH UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | Surface Mount | 3-SMD, No Lead | UB |
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Linear Integrated Systems, Inc. |
JFET P-CH 30V 8DFN
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 125 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
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Package: - |
Stock8,982 |
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30 V | - | - | - | - | - | 125 Ohms | 350 mW | -55°C ~ 135°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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Microchip Technology |
JFET N-CH 30V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 25 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 50 mA @ 15 V | - | 4 V @ 500 pA | 18pF @ 10V | 25 Ohms | 360 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Renesas Electronics Corporation |
JFET N-CH
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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InterFET |
JFET P-Channel 30V Low Noise
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 45 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Resistance - RDS(On): 65 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 30 V | 45 mA @ 15 V | - | 6 V @ 1 nA | 12pF @ 10V | 65 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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Linear Integrated Systems, Inc. |
JFET N-CH 40V 50MA 8DFN
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
- Resistance - RDS(On): 60 Ohms
- Power - Max: 300 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
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Package: - |
Stock18,270 |
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40 V | 40 V | 25 mA @ 20 V | 50 mA | 2 V @ 10 nA | 13pF @ 20V | 60 Ohms | 300 mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x2) |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 60V 8SOIC
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 60 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
- Resistance - RDS(On): -
- Power - Max: 400 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock7,500 |
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60 V | - | 500 µA @ 20 V | - | 1 V @ 1 nA | 10pF @ 20V | - | 400 mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
JFET N-CH 30V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 60 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 8 mA @ 15 V | - | 800 mV @ 500 pA | 18pF @ 10V | 60 Ohms | 360 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Linear Integrated Systems, Inc. |
JFET P-CH 30V SOT23-3
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 125 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock20,436 |
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30 V | - | - | - | - | - | 125 Ohms | 350 mW | -55°C ~ 135°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Microchip Technology |
JFET N-CH
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 60V TO71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 60 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
- Resistance - RDS(On): -
- Power - Max: 400 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
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Package: - |
Stock27 |
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60 V | - | 500 µA @ 20 V | - | 1 V @ 1 nA | 10pF @ 20V | - | 400 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 Metal Can | TO-71 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 50V TO71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): 50 V
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
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Package: - |
Stock1,149 |
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50 V | 50 V | 500 µA @ 10 V | - | 500 mV @ 1 nA | 8pF @ 15V | - | 300 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 Metal Can | TO-71 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V SOT23-6
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
Stock9,000 |
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25 V | - | 7 mA @ 10 V | - | 1.5 V @ 1 nA | 5pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 60V SOT23-6
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 60 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
Stock8,970 |
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60 V | - | 2.5 mA @ 15 V | - | 1.5 V @ 1 nA | 8pF @ 15V | - | 500 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Central Semiconductor Corp |
JFET N-CH 40V 50MA DIE
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
- Resistance - RDS(On): 60 Ohms
- Power - Max: 1.8 W
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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40 V | 40 V | 25 mA @ 20 V | 50 mA | 2 V @ 1 nA | 20pF @ 20V | 60 Ohms | 1.8 W | -65°C ~ 175°C (TJ) | Surface Mount | Die | Die |