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Microsemi Corporation |
N CHANNEL JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,152 |
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Vishay Siliconix |
JFET N-CH 30V 0.5W TO-206AC
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
- Resistance - RDS(On): 3 Ohm
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
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Package: TO-206AC, TO-52-3 Metal Can |
Stock3,840 |
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30V | - | 500mA @ 10V | - | 4V @ 3nA | 160pF @ 0V | 3 Ohm | 500mW | -55°C ~ 150°C (TJ) | Through Hole | TO-206AC, TO-52-3 Metal Can | TO-206AC (TO-52) |
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Vishay Siliconix |
MOSFET N-CH 40V .1NA TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 60 Ohm
- Power - Max: 1.8W
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock7,248 |
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40V | - | 25mA @ 20V | - | 2V @ 1nA | 14pF @ 20V | 60 Ohm | 1.8W | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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Vishay Siliconix |
MOSFET N-CH 40V .1NA TO-18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 30 Ohm
- Power - Max: 1.8W
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock5,776 |
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40V | - | 50mA @ 20V | - | 4V @ 1nA | 14pF @ 20V | 30 Ohm | 1.8W | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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ON Semiconductor |
JFET N-CH 1MA 30MW USFP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 0.7pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 30mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: 3-USFP
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Package: 3-SMD, Flat Leads |
Stock4,800 |
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- | 40V | 50µA @ 10V | 1mA | - | 0.7pF @ 10V | - | 30mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 3-USFP |
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NXP |
JFET N-CH 25V 0.4W SOT54
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Resistance - RDS(On): 18 Ohm
- Power - Max: 400mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,440 |
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25V | 25V | 10mA @ 5V | - | 4V @ 1µA | 30pF @ 0V | 18 Ohm | 400mW | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 5 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,856 |
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25V | - | 150mA @ 15V | - | 4V @ 3nA | 30pF @ 10V (VGS) | 5 Ohm | 350mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 40V 0.625W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 50 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,232 |
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40V | - | 15mA @ 20V | - | 2V @ 1nA | 16pF @ 20V | 50 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 30V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
- Resistance - RDS(On): 100 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,080 |
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30V | 30V | 5mA @ 15V | - | 500mV @ 10nA | 10pF @ 15V (VGS) | 100 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 35V 0.35W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohm
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,632 |
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35V | - | 20mA @ 15V | - | 3V @ 1µA | - | 30 Ohm | 350mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 18 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,928 |
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25V | - | 10mA @ 15V | - | 500mV @ 10nA | - | 18 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
JFET N-CH 40V 400MW TO92-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Resistance - RDS(On): 50 Ohm
- Power - Max: 400mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,632 |
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40V | 40V | 5mA @ 15V | - | 1V @ 1µA | 6pF @ 10V (VGS) | 50 Ohm | 400mW | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH S-MINI FET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,104 |
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- | - | 600µA @ 10V | - | 400mV @ 100nA | 8.2pF @ 10V | - | 100mW | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V S-MINI
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,432 |
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- | - | 300µA @ 10V | - | 400mV @ 100nA | 8.2pF @ 10V | - | 100mW | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
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Fairchild/ON Semiconductor |
JFET P-CH 30V 0.225W SOT23
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 225mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock108,000 |
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30V | - | 2mA @ 15V | - | 500mV @ 1nA | - | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 35V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,032 |
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35V | - | 20mA @ 15V | - | 3V @ 1µA | - | 30 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
JFET N-CH 50MA 200MW CP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 15V
- Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
- Current Drain (Id) - Max: 50mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 200mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock174,060 |
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- | 15V | 14.5mA @ 5V | 50mA | 200mV @ 100µA | - | - | 200mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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Microchip Technology |
JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Microchip Technology |
JFET N-CH 30V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 40 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 20 mA @ 15 V | - | 2 V @ 500 pA | 18pF @ 10V | 40 Ohms | 360 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Microchip Technology |
JFET N-CH 30V TO18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 60 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: - |
Request a Quote |
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30 V | 30 V | 8 mA @ 15 V | - | 800 mV @ 500 pA | 18pF @ 10V | 60 Ohms | 360 mW | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Microchip Technology |
JFET P-CH 30V TO18
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 75 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: - |
Request a Quote |
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30 V | 30 V | 30 mA @ 18 V | - | 10 V @ 1 nA | 25pF @ 15V | 75 Ohms | 500 mW | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 25V SOT23-6
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
Stock8,790 |
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25 V | - | 7 mA @ 10 V | - | 1 V @ 1 nA | 5pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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InterFET |
JFET N-Channel -30V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 0.1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
- Resistance - RDS(On): 800 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 30 V | 1 mA @ 15 V | - | 1 V @ 0.1 nA | 3pF @ 15V | 800 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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onsemi |
NCH J-FET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
JFET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Central Semiconductor Corp |
JFET N-CH 35V 5MA SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): 35 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: 5 mA
- Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
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35 V | 35 V | 5 mA @ 15 V | 5 mA | 2.5 V @ 1 nA | 4.5pF @ 15V | - | - | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 60V 8SOIC
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 60 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
- Resistance - RDS(On): -
- Power - Max: 400 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock7,380 |
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60 V | - | 500 µA @ 20 V | - | 1 V @ 1 nA | 10pF @ 20V | - | 400 mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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InterFET |
JFET N-Channel -50V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 50 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 600 mV @ 10 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 440 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
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- | 50 V | - | - | 600 mV @ 10 µA | - | 440 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |