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Microsemi Corporation |
N CHANNEL JFET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
- Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
- Resistance - RDS(On): 25 Ohm
- Power - Max: 360mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock4,736 |
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30V | 30V | 175mA @ 15V | - | 10V @ 500pA | 18pF @ 10V | 25 Ohm | 360mW | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Vishay Siliconix |
JFET DUAL P-CH 25V TO-71
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-71-6
- Supplier Device Package: -
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Package: TO-71-6 |
Stock3,568 |
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25V | - | 6mA @ 10V | - | 1V @ 1nA | 3pF @ 10V | - | 500mW | -55°C ~ 150°C (TJ) | Through Hole | TO-71-6 | - |
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Vishay Siliconix |
JFET P-CH 30V TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock3,168 |
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- | - | - | - | - | - | - | - | - | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-206AA (TO-18) |
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Vishay Siliconix |
MOSFET N-CH 40V 200UA TO-206AF
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
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Package: TO-206AF, TO-72-4 Metal Can |
Stock2,400 |
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40V | - | 200µA @ 10V | - | 2V @ 1nA | 3pF @ 10V | - | 300mW | -55°C ~ 175°C (TJ) | Through Hole | TO-206AF, TO-72-4 Metal Can | TO-206AF (TO-72) |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 625MW TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 30 Ohm
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,480 |
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30V | - | 50mA @ 20V | - | 4V @ 1nA | 14pF @ 20V | 30 Ohm | 625mW | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 50V 0.1W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,064 |
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50V | - | 600µA @ 10V | - | 400mV @ 100nA | 8.2pF @ 0V | - | 100mW | 125°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Panasonic Electronic Components |
JFET N-CH 20MA 150MW SMINI-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 10V
- Current Drain (Id) - Max: 20mA
- Voltage - Cutoff (VGS off) @ Id: 100mV @ 10µA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
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Package: SC-70, SOT-323 |
Stock5,936 |
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- | 30V | 500µA @ 10V | 20mA | 100mV @ 10µA | 14pF @ 10V | - | 150mW | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
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Panasonic Electronic Components |
JFET N-CH 1MA 125MW SSMINI-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V
- Current Drain (Id) - Max: 1mA
- Voltage - Cutoff (VGS off) @ Id: 1.3V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 1pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 125mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F2
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Package: SC-89, SOT-490 |
Stock4,448 |
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- | 40V | 50µA @ 10V | 1mA | 1.3V @ 1µA | 1pF @ 10V | - | 125mW | 125°C (TJ) | Surface Mount | SC-89, SOT-490 | SSMini3-F2 |
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Central Semiconductor Corp |
JFET N-CH 40V 0.625W TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohm
- Power - Max: 625mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock5,360 |
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40V | - | 5mA @ 20V | - | 500mV @ 1nA | 14pF @ 20V | 100 Ohm | 625mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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NXP |
JFET N-CH 10MA 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
- Current Drain (Id) - Max: 10mA
- Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,528 |
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- | 25V | 1mA @ 10V | 10mA | 2.5V @ 0.5nA | 4pF @ 10V | - | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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ON Semiconductor |
JFET N-CH 50MA 200MW CP
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 15V
- Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
- Current Drain (Id) - Max: 50mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 200mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock581,892 |
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- | 15V | 7.3mA @ 5V | 50mA | 200mV @ 100µA | - | - | 200mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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ON Semiconductor |
JFET N-CH 50MA 300MW MCPH3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 15V
- Current - Drain (Idss) @ Vds (Vgs=0): 16mA @ 5V
- Current Drain (Id) - Max: 50mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 10µA
- Input Capacitance (Ciss) (Max) @ Vds: 4.9pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: SC-70FL/MCPH3
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Package: 3-SMD, Flat Leads |
Stock29,976 |
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- | 15V | 16mA @ 5V | 50mA | 600mV @ 10µA | 4.9pF @ 5V | - | 300mW | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SC-70FL/MCPH3 |
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NXP |
JFET N-CH 25V 250MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 12 Ohm
- Power - Max: 250mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock115,212 |
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25V | 25V | 40mA @ 15V | - | 6V @ 1µA | 30pF @ 10V (VGS) | 12 Ohm | 250mW | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) |
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Fairchild/ON Semiconductor |
JFET N-CH 25V 350MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock721,752 |
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25V | - | 1mA @ 15V | - | 500mV @ 10nA | 7pF @ 15V | - | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 350MW SOT23
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Drain to Source Voltage (Vdss): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohm
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock203,292 |
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30V | 30V | 5mA @ 20V | - | 500mV @ 1nA | 14pF @ 20V | 100 Ohm | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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InterFET |
JFET N-Channel -50V Low Ciss
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 50 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
- Resistance - RDS(On): 450 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Request a Quote |
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- | 50 V | 4.5 mA @ 15 V | - | 3.5 V @ 100 nA | 3pF @ 15V | 450 Ohms | 350 mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | SOT-23-3 |
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NTE Electronics, Inc |
JFET N-CH 40V TO18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohms
- Power - Max: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: - |
Request a Quote |
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40 V | 40 V | 5 mA @ 20 V | - | 500 mV @ 1 nA | 14pF @ 20V | 100 Ohms | - | -55°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Microchip Technology |
JFET N-CH 40V TO18
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 80 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: - |
Request a Quote |
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40 V | 40 V | 8 mA @ 20 V | - | - | 16pF @ 20V | 80 Ohms | 360 mW | -65°C ~ 175°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Microchip Technology |
JFET P-CH 30V UB
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Resistance - RDS(On): 175 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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30 V | 30 V | 5 mA @ 15 V | - | 1 V @ 1 nA | 27pF @ 15V | 175 Ohms | 500 mW | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Linear Integrated Systems, Inc. |
JFET N-CH 25V TO18-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): 35 Ohms
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18-3
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Package: - |
Stock1,362 |
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25 V | - | 12 mA @ 10 V | - | 1 V @ 1 nA | 4pF @ 10V | 35 Ohms | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18-3 |
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Microchip Technology |
JFET N-CH 40V UB
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Resistance - RDS(On): 30 Ohms
- Power - Max: 360 mW
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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40 V | 40 V | 30 mA @ 20 V | - | - | 16pF @ 20V | 30 Ohms | 360 mW | -65°C ~ 175°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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NTE Electronics, Inc |
JFET N-CH 25V 30MA TO92
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
- Current Drain (Id) - Max: 30 mA
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 350 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
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25 V | - | 4 mA @ 15 V | 30 mA | 500 mV @ 10 nA | 5pF @ 15V | - | 350 mW | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Central Semiconductor Corp |
JFET N-CH 40V 50MA DIE
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
- Resistance - RDS(On): 60 Ohms
- Power - Max: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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40 V | 40 V | 25 mA @ 20 V | 50 mA | 2 V @ 1 nA | 20pF @ 20V | 60 Ohms | - | -65°C ~ 175°C (TJ) | Surface Mount | Die | Die |
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Linear Integrated Systems, Inc. |
JFET N-CH 40V TO18-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 30 Ohms
- Power - Max: 1.8 W
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18-3
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Package: - |
Stock765 |
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40 V | - | 50 mA @ 20 V | - | 4 V @ 1 nA | 14pF @ 20V | 30 Ohms | 1.8 W | -55°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18-3 |
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Renesas Electronics Corporation |
JFET N-CH
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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Linear Integrated Systems, Inc. |
JFET 2N-CH 40V TO78-7
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 500 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-7 Metal Can
- Supplier Device Package: TO-78-7
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Package: - |
Stock1,500 |
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40 V | - | - | - | - | 3pF @ 10V | - | 500 mW | -55°C ~ 150°C (TJ) | Through Hole | TO-78-7 Metal Can | TO-78-7 |
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onsemi |
NCH J-FET
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Linear Integrated Systems, Inc. |
JFET 2N-CH 50V 8SOIC
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): 50 V
- Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock3,324 |
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50 V | 50 V | 500 µA @ 10 V | - | 500 mV @ 1 nA | 8pF @ 15V | - | 300 mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |