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ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,072 |
|
300mW | 11V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,544 |
|
300mW | 11V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 1.6V
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 50µA
- Current - Peak: 2µA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock26,400 |
|
300mW | 11V | 1.6V | 10nA | 50µA | 2µA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,568 |
|
300mW | 11V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,972 |
|
300mW | 11V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 1.6V
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 50µA
- Current - Peak: 2µA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,120 |
|
300mW | 11V | 1.6V | 10nA | 50µA | 2µA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
TRANS PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 1.6V
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 50µA
- Current - Peak: 2µA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock229,920 |
|
300mW | 11V | 1.6V | 10nA | 50µA | 2µA | TO-226-3, TO-92-3 (TO-226AA) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,840 |
|
300mW | 11V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 1.6V
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 50µA
- Current - Peak: 2µA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock20,856 |
|
300mW | 11V | 1.6V | 10nA | 50µA | 2µA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,440 |
|
300mW | 11V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
THYRISTOR PROG UNIJUNCT 40V TO92
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 11V
- Voltage - Offset (Vt): 1.6V
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 50µA
- Current - Peak: 2µA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock60,000 |
|
300mW | 11V | 1.6V | 10nA | 50µA | 2µA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Central Semiconductor Corp |
PROGRAMMABLE UJT 40V TO226-3
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 6V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,060,120 |
|
300mW | 6V | 600mV | 10nA | 25µA | 150nA | TO-226-3, TO-92-3 (TO-226AA) |
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Central Semiconductor Corp |
PROGRAMMABLE UJT 40V TO226-3
- Voltage: 40V
- Power Dissipation (Max): 300mW
- Voltage - Output: 6V
- Voltage - Offset (Vt): 1.6V
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 50µA
- Current - Peak: 2µA
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,696,144 |
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300mW | 6V | 1.6V | 10nA | 50µA | 2µA | TO-226-3, TO-92-3 (TO-226AA) |
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Central Semiconductor Corp |
PROGRAMMABLE UJT SOT-23
- Voltage: 40V
- Power Dissipation (Max): 167mW
- Voltage - Output: 6V
- Voltage - Offset (Vt): 600mV
- Current - Gate to Anode Leakage (Igao): 10nA
- Current - Valley (Iv): 25µA
- Current - Peak: 150nA
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock51,846 |
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167mW | 6V | 600mV | 10nA | 25µA | 150nA | TO-236-3, SC-59, SOT-23-3 |