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GeneSiC Semiconductor |
DIODE GEN PURP 600V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock6,160 |
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600V | 150A | 1.2V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE MODULE 80V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock3,232 |
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80V | 200A | 840mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 80V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock3,408 |
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80V | 200A | 840mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 60V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock3,568 |
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60V | 200A | 750mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 60V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,584 |
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60V | 200A | 750mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,392 |
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40V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock6,848 |
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40V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 35V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock3,328 |
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35V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 35V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock4,256 |
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35V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 30V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock7,648 |
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30V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 30V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock2,224 |
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30V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 20V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock2,256 |
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20V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 20V 200A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock6,784 |
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20V | 200A | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 200V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,712 |
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200V | 120A | 920mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 200V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock2,100 |
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200V | 120A | 920mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 150V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: D-67 |
Stock3,312 |
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150V | 120A | 880mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE MODULE 150V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: D-67 |
Stock3,328 |
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150V | 120A | 880mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE MODULE 100V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock3,616 |
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100V | 120A | 840mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 100V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,776 |
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100V | 120A | 840mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 80V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120V
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock4,160 |
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80V | 120A | 840mV @ 120V | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 80V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120V
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock6,816 |
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80V | 120A | 840mV @ 120V | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 60V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock4,720 |
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60V | 120A | 750mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 60V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock7,408 |
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60V | 120A | 750mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 45V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: D-67 HALF-PAK |
Stock3,296 |
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45V | 120A | 700mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE MODULE 45V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
|
Package: D-67 |
Stock3,504 |
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45V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 35V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
|
Package: D-67 |
Stock7,808 |
|
35V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 35V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
|
Package: D-67 |
Stock4,832 |
|
35V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE MODULE 30V 120A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
|
Package: D-67 |
Stock2,336 |
|
30V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |