Page 27 - GeneSiC Semiconductor Products - Diodes - Rectifiers - Single

MBRH240100R
GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

Package: D-67

Stock6,128
MBRH240100
GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

Package: D-67

Stock3,152
MBRH20045RL
GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

Package: D-67

Stock5,600
MBRH20045L
GeneSiC Semiconductor

DIODE MODULE 45V 200A D-67

Package: D-67

Stock4,432
MBRH20040RL
GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

Package: D-67 HALF-PAK

Stock6,160
MBRH20040L
GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

Package: D-67

Stock2,960
MBRH20035RL
GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Package: D-67

Stock3,104
MBRH20035L
GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Package: D-67

Stock6,384
MBRH20030RL
GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Package: D-67

Stock6,736
MBRH20030L
GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Package: D-67

Stock5,024
MBRH20020RL
GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Package: D-67

Stock3,840
MBRH20020L
GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Package: D-67

Stock4,800
MBRH15045RL
GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Package: D-67

Stock5,328
MBRH15045L
GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Package: D-67

Stock6,464
MBRH15040RL
GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

Package: D-67

Stock6,624
MBRH15040L
GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

Package: D-67

Stock5,280
MBRH15035RL
GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

Package: D-67

Stock6,560
MBRH15035L
GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

Package: D-67

Stock7,360
MBRH15030RL
GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

Package: D-67

Stock2,496
MBRH15030L
GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

Package: D-67

Stock7,792

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH240100R	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock6,128	100V	240A	840mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH240100	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock3,152	100V	240A	840mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20045RL	GeneSiC Semiconductor	DIODE MODULE 45V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock5,600	45V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20045L	GeneSiC Semiconductor	DIODE MODULE 45V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock4,432	45V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20040RL	GeneSiC Semiconductor	DIODE MODULE 40V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67 HALF-PAK	Stock6,160	40V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67 HALF-PAK	D-67	-
MBRH20040L	GeneSiC Semiconductor	DIODE MODULE 40V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock2,960	40V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH20035RL	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock3,104	35V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-	Chassis Mount	D-67	D-67	-
MBRH20035L	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock6,384	35V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-	Chassis Mount	D-67	D-67	-
MBRH20030RL	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock6,736	30V	200A	580mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20030L	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock5,024	30V	200A	580mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20020RL	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock3,840	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH20020L	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock4,800	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH15045RL	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock5,328	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
MBRH15045L	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock6,464	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
MBRH15040RL	GeneSiC Semiconductor	DIODE MODULE 40V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock6,624	40V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH15040L	GeneSiC Semiconductor	DIODE MODULE 40V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock5,280	40V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH15035RL	GeneSiC Semiconductor	DIODE MODULE 35V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock6,560	35V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-
MBRH15035L	GeneSiC Semiconductor	DIODE MODULE 35V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock7,360	35V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-
MBRH15030RL	GeneSiC Semiconductor	DIODE MODULE 30V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock2,496	30V	150A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-
MBRH15030L	GeneSiC Semiconductor	DIODE MODULE 30V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock7,792	30V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH15020RL	GeneSiC Semiconductor	DIODE MODULE 20V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock7,984	20V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH15020L	GeneSiC Semiconductor	DIODE MODULE 20V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock6,000	20V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
GB10SLT12-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 1200V 10A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,648	-	-	-	-	-	-	-	-	-	-	-
GB02SLT06-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 650V 2A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,240	-	-	-	-	-	-	-	-	-	-	-
GAP05SLT80-220	GeneSiC Semiconductor	DIODE SCHOTTKY 8KV 50MA AXIAL Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 8000V Current - Average Rectified (Io): 50mA (DC) Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 3.8µA @ 8000V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	Package: Axial	Stock2,224	8000V	50mA (DC)	4.6V @ 50mA	No Recovery Time > 500mA (Io)	0ns	3.8µA @ 8000V	25pF @ 1V, 1MHz	Through Hole	Axial	-	-55°C ~ 175°C
1N8028-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 9.4A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 9.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: 884pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	Package: TO-257-3	Stock5,840	1200V	9.4A (DC)	1.6V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	884pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8034-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 9.4A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 1107pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	Package: TO-257-3	Stock6,048	650V	9.4A (DC)	1.34V @ 10A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	1107pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8031-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A TO276 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-276AA Supplier Device Package: TO-276 Operating Temperature - Junction: -55°C ~ 250°C	Package: TO-276AA	Stock3,216	650V	1A	1.5V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	76pF @ 1V, 1MHz	Through Hole	TO-276AA	TO-276	-55°C ~ 250°C