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GeneSiC Semiconductor |
DIODE FAST REC 100V 70A D67
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: D-67 |
Stock3,344 |
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GeneSiC Semiconductor |
DIODE MODULE 40V 150A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,280 |
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock5,392 |
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GeneSiC Semiconductor |
DIODE MODULE 30V 200A D-67
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 |
Stock7,648 |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 50A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock5,120 |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock7,584 |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 35A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: DO-203AB, DO-5, Stud |
Stock5,648 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 12A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock5,792 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 16A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock2,656 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 4A
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 76pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-206AB, TO-46-3 Metal Can
- Supplier Device Package: TO-46
- Operating Temperature - Junction: -55°C ~ 225°C
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Package: TO-206AB, TO-46-3 Metal Can |
Stock5,712 |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 40A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: DO-203AB, DO-5, Stud |
Stock5,232 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 300A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: Three Tower |
Stock5,840 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 300A TO244AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 300A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 20V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
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Package: TO-244AB |
Stock7,440 |
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GeneSiC Semiconductor |
DIODE MODULE 800V 400A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: Three Tower |
Stock7,872 |
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GeneSiC Semiconductor |
DIODE MODULE 200V 300A 2TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 300A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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Package: Twin Tower |
Stock5,376 |
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GeneSiC Semiconductor |
DIODE MODULE 30V 120A 3TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 120A (DC)
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: Three Tower |
Stock2,560 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 60A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 60A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock5,408 |
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GeneSiC Semiconductor |
DIODE MODULE 40V 400A 2TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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Package: Twin Tower |
Stock6,064 |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 200A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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Package: SOT-227-4, miniBLOC |
Stock5,872 |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 15A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock7,952 |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 15A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock4,848 |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 6A BR-6
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -65°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, BR-6
- Supplier Device Package: BR-6
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Package: 4-Square, BR-6 |
Stock6,368 |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 8A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: 4-SIP, KBU |
Stock7,800 |
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GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 25A TO247-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
- Capacitance @ Vr, F: 334pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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GeneSiC Semiconductor |
100V 15A GBJ SINGLE PHASE BRIDGE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100 V
- Current - Average Rectified (Io): 15 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ
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Package: - |
Request a Quote |
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GeneSiC Semiconductor |
SIC MOSFET N-CH 75A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 374W (Tc)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock4,401 |
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GeneSiC Semiconductor |
DIODE MODULE GP 1.6KV 3TOWER
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: - |
Request a Quote |
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GeneSiC Semiconductor |
DIODE MODULE GP 600V 100A 3TOWER
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: - |
Request a Quote |
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