Page 72 - GeneSiC Semiconductor Products

MBRH20035R
GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Package: D-67

Stock3,328
MBRH12060R
GeneSiC Semiconductor

DIODE MODULE 60V 120A D-67

Package: D-67

Stock4,720
FR40B02
GeneSiC Semiconductor

DIODE GEN PURP 100V 40A DO5

Package: DO-203AB, DO-5, Stud

Stock6,016
MURF30060R
GeneSiC Semiconductor

DIODE GEN PURP 600V 150A TO244

Package: TO-244AB

Stock2,864
MBRTA500200R
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A 3TOWER

Package: Three Tower

Stock2,100
MBRF50030R
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 250A TO244AB

Package: TO-244AB

Stock3,744
MBRF30035R
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A TO244AB

Package: TO-244AB

Stock7,072
MBRF300200R
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A TO244AB

Package: TO-244AB

Stock5,520
MBRF120200
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A TO244AB

Package: TO-244AB

Stock6,736
FST8380SM
GeneSiC Semiconductor

DIODE MODULE 80V 80A D61-3SM

Package: D61-3SM

Stock3,776
MSRTA50080(A)
GeneSiC Semiconductor

DIODE MODULE 800V 500A 3TOWER

Package: Three Tower

Stock5,568
MBRT600150R
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 3 TOWER

Package: Three Tower

Stock6,688
MURTA30040
GeneSiC Semiconductor

DIODE GEN PURP 400V 150A 3 TOWER

Package: Three Tower

Stock7,552
MBR120150CTR
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 60A 2 TOWER

Package: Twin Tower

Stock2,064
MBRT200150
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A 3 TOWER

Package: Three Tower

Stock2,272
MBRT12045R
GeneSiC Semiconductor

DIODE MODULE 45V 120A 3TOWER

Package: Three Tower

Stock6,464
MBR2X050A100
GeneSiC Semiconductor

DIODE SCHOTTKY 100V 50A SOT227

Package: SOT-227-4, miniBLOC

Stock3,760
MBRT200100
GeneSiC Semiconductor

DIODE MODULE 100V 200A 3TOWER

Package: Three Tower

Stock3,440
MBR2X030A045
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 60A SOT227

Package: SOT-227-4, miniBLOC

Stock6,384
GBPC5001W
GeneSiC Semiconductor

DIODE BRIDGE 100V 50A GBPC-W

Package: 4-Square, GBPC-W

Stock2,832

Part Number	Manufacturer	Description	Package	Stock
MBRH20035R	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock3,328
MBRH12060R	GeneSiC Semiconductor	DIODE MODULE 60V 120A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 750mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67	Stock4,720
FR40B02	GeneSiC Semiconductor	DIODE GEN PURP 100V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock6,016
MURF30060R	GeneSiC Semiconductor	DIODE GEN PURP 600V 150A TO244 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	Package: TO-244AB	Stock2,864
MBRTA500200R	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 250A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 250A Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock2,100
MBRF50030R	GeneSiC Semiconductor	DIODE SCHOTTKY 30V 250A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 250A Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock3,744
MBRF30035R	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 150A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 700mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock7,072
MBRF300200R	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 150A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock5,520
MBRF120200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 60A TO244AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 920mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock6,736
FST8380SM	GeneSiC Semiconductor	DIODE MODULE 80V 80A D61-3SM Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 80A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: D61-3SM Supplier Device Package: D61-3SM	Package: D61-3SM	Stock3,776
MSRTA50080(A)	GeneSiC Semiconductor	DIODE MODULE 800V 500A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock5,568
MBRT600150R	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 300A 3 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock6,688
MURTA30040	GeneSiC Semiconductor	DIODE GEN PURP 400V 150A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 400V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock7,552
MBR120150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 60A 2 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock2,064
MBRT200150	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 100A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock2,272
MBRT12045R	GeneSiC Semiconductor	DIODE MODULE 45V 120A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock6,464
MBR2X050A100	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 50A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 50A Voltage - Forward (Vf) (Max) @ If: 840mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock3,760
MBRT200100	GeneSiC Semiconductor	DIODE MODULE 100V 200A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock3,440
MBR2X030A045	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,384
GBPC5001W	GeneSiC Semiconductor	DIODE BRIDGE 100V 50A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	Package: 4-Square, GBPC-W	Stock2,832
KBPC3502W	GeneSiC Semiconductor	DIODE BRIDGE 200V 35A KBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	Package: 4-Square, KBPC-W	Stock4,880
2W02M	GeneSiC Semiconductor	DIODE BRIDGE 200V 2A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	Package: 4-Circular, WOM	Stock276,900
KBU6B	GeneSiC Semiconductor	DIODE BRIDGE 100V 6A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	Package: 4-SIP, KBU	Stock15,996
GC50MPS06-247	GeneSiC Semiconductor	DIODE SIL CARB 650V 50A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max)	Package: -	Stock1,887
MSRT200100AD	GeneSiC Semiconductor	DIODE MODULE GP 1KV 200A 3TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: -	Request a Quote
GBJ6D	GeneSiC Semiconductor	200V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	Package: -	Request a Quote
MSRTA600140A	GeneSiC Semiconductor	DIODE MODULE GP 1.4KV 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: 3-SMD Module Supplier Device Package: Three Tower	Package: -	Request a Quote
GD2X30MPS06D	GeneSiC Semiconductor	DIODE ARR SIC 600V 30A TO247-3 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 30A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: -	Stock1,635