Page 4 - GeneSiC Semiconductor Products

GA20SICP12-263
GeneSiC Semiconductor

SIC CO-PACK SJT/RECT 20A 1.2KV

Package: TO-263-3, D2Pak (7 Leads + Tab), TO-263CA

Stock6,896
MBRH200200
GeneSiC Semiconductor

DIODE MODULE 200V 200A D-67

Package: D-67

Stock2,640
GKR240/04
GeneSiC Semiconductor

DIODE GEN PURP 400V 320A DO205AB

Package: DO-205AB, DO-9, Stud

Stock4,528
1N4594R
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV DO205AA

Package: DO-205AA, DO-8, Stud

Stock5,072
MUR5060R
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 50A DO5

Package: DO-203AB, DO-5, Stud

Stock3,408
1N3211
GeneSiC Semiconductor

DIODE GEN PURP 300V 15A DO5

Package: DO-203AB, DO-5, Stud

Stock6,192
GKR26/04
GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO4

Package: DO-203AA, DO-4, Stud

Stock7,744
S40Q
GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 40A DO5

Package: DO-203AB, DO-5, Stud

Stock6,180
1N2138AR
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 60A DO5

Package: DO-203AB, DO-5, Stud

Stock7,788
MBRF30045R
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A TO244AB

Package: TO-244AB

Stock3,616
MBRF30040R
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A TO244AB

Package: TO-244AB

Stock4,816
FST8345SM
GeneSiC Semiconductor

DIODE MODULE 45V 80A D61-3SM

Package: D61-3SM

Stock5,568
MBR60020CTR
GeneSiC Semiconductor

DIODE MODULE 20V 300A 2TOWER

Package: Twin Tower

Stock2,384
MURT30060
GeneSiC Semiconductor

DIODE MODULE 600V 300A 3TOWER

Package: Three Tower

Stock2,000
MUR40005CT
GeneSiC Semiconductor

DIODE MODULE 50V 400A 2TOWER

Package: Twin Tower

Stock3,136
MBRT30045R
GeneSiC Semiconductor

DIODE MODULE 45V 300A 3TOWER

Package: Three Tower

Stock3,200
MBRT300100
GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

Package: Three Tower

Stock5,552
MBRT200150R
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A 3 TOWER

Package: Three Tower

Stock4,672
MBRT12080
GeneSiC Semiconductor

DIODE MODULE 80V 120A 3TOWER

Package: Three Tower

Stock3,072
MUR2X100A06
GeneSiC Semiconductor

DIODE GEN PURP 600V 100A SOT227

Package: SOT-227-4, miniBLOC

Stock5,408

Part Number	Manufacturer	Description	Package	Stock
GA20SICP12-263	GeneSiC Semiconductor	SIC CO-PACK SJT/RECT 20A 1.2KV Type: - Configuration: - Current: 20A Voltage: 1200V Voltage - Isolation: - Package / Case: TO-263-3, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-3, D2Pak (7 Leads + Tab), TO-263CA	Stock6,896
MBRH200200	GeneSiC Semiconductor	DIODE MODULE 200V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67	Stock2,640
GKR240/04	GeneSiC Semiconductor	DIODE GEN PURP 400V 320A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-205AB, DO-9, Stud	Stock4,528
1N4594R	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock5,072
MUR5060R	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 50A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock3,408
1N3211	GeneSiC Semiconductor	DIODE GEN PURP 300V 15A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AB, DO-5, Stud	Stock6,192
GKR26/04	GeneSiC Semiconductor	DIODE GEN PURP 400V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-203AA, DO-4, Stud	Stock7,744
S40Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock6,180
1N2138AR	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 60A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AB, DO-5, Stud	Stock7,788
MBRF30045R	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 150A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 700mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock3,616
MBRF30040R	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 150A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 700mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Package: TO-244AB	Stock4,816
FST8345SM	GeneSiC Semiconductor	DIODE MODULE 45V 80A D61-3SM Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 80A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D61-3SM Supplier Device Package: D61-3SM	Package: D61-3SM	Stock5,568
MBR60020CTR	GeneSiC Semiconductor	DIODE MODULE 20V 300A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock2,384
MURT30060	GeneSiC Semiconductor	DIODE MODULE 600V 300A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock2,000
MUR40005CT	GeneSiC Semiconductor	DIODE MODULE 50V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Package: Twin Tower	Stock3,136
MBRT30045R	GeneSiC Semiconductor	DIODE MODULE 45V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock3,200
MBRT300100	GeneSiC Semiconductor	DIODE MODULE 100V 300A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock5,552
MBRT200150R	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 100A 3 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock4,672
MBRT12080	GeneSiC Semiconductor	DIODE MODULE 80V 120A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Package: Three Tower	Stock3,072
MUR2X100A06	GeneSiC Semiconductor	DIODE GEN PURP 600V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock5,408
MBR2X060A060	GeneSiC Semiconductor	DIODE SCHOTTKY 60V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,800
M3P75A-40	GeneSiC Semiconductor	DIODE MODULE STD 75A 400V 3PH Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock3,696
GBPC1502T	GeneSiC Semiconductor	DIODE BRIDGE 200V 15A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	Package: 4-Square, GBPC	Stock6,144
KBU1001	GeneSiC Semiconductor	DIODE BRIDGE 100V 10A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	Package: 4-SIP, KBU	Stock3,072
KBJ402G	GeneSiC Semiconductor	DIODE BRIDGE 200V 4A KBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	Package: 4-SIP, KBJ	Stock4,672
GBJ6K	GeneSiC Semiconductor	800V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	Package: -	Request a Quote
GD60MPS17H	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 122A TO247 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 122A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1700 V Capacitance @ Vr, F: 4577pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock540
GB2X50MPS12-227	GeneSiC Semiconductor	DIODE MOD SIC 1200V 93A SOT227 Diode Configuration: 2 Independent Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 93A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: -	Stock714