IXYS Products

IXA12IF1200HB

IXYS

IGBT 1200V 20A 85W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 85W
• Switching Energy: 1.1mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 10A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (HB)

Package: TO-247-3

IXGT32N170 T&R

IXYS

IGBT 1700V 75A 350W TO268

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
• Power - Max: 350W
• Switching Energy: 11mJ (off)
• Input Type: Standard
• Gate Charge: 155nC
• Td (on/off) @ 25°C: 45ns/270ns
• Test Condition: 1020V, 32A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

MIO1200-33E10

IXYS

MOD IGBT SGL SWITCH 3300V E10

• IGBT Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 3300V
• Current - Collector (Ic) (Max): 1200A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A
• Current - Collector Cutoff (Max): 120mA
• Input Capacitance (Cies) @ Vce: 187nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E10
• Supplier Device Package: E10

Package: E10

MIXA20WB1200TML

IXYS

IGBT MODULE 1200V 20A HEX

• IGBT Type: PT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 28A
• Power - Max: 100W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 16A
• Current - Collector Cutoff (Max): 100µA
• Input Capacitance (Cies) @ Vce: -
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Supplier Device Package: MiniPack2

Package: MiniPack2

IXTH280N055T

IXYS

MOSFET N-CH 55V 280A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 550W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Package: TO-247-3

IXTC220N055T

IXYS

MOSFET N-CH 55V 130A ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

Package: ISOPLUS220?

IXFB40N110P

IXYS

MOSFET N-CH 1100V 40A PLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1100V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS264?
• Package / Case: TO-264-3, TO-264AA

Package: TO-264-3, TO-264AA

IXFB30N120P

IXYS

MOSFET N-CH 1200V 30A PLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS264?
• Package / Case: TO-264-3, TO-264AA

Package: TO-264-3, TO-264AA

IXKF40N60SCD1

IXYS

MOSFET N-CH 600V 38A I4-PAC-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS i4-PAC?
• Package / Case: i4-Pac?-5 (3 leads)

Package: i4-Pac?-5 (3 leads)

IXTH2N170D2

IXYS

MOSFET N-CH 1700V 2A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 10V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 568W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1A, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Package: TO-247-3

IXTH130N15T

IXYS

MOSFET N-CH 150V 130A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 750W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 65A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Package: TO-247-3

IXFX24N100Q3

IXYS

MOSFET N-CH 1000V 24A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1000W (Tc)
• Rds On (Max) @ Id, Vgs: 440 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Package: TO-247-3

IXFK64N60P

IXYS

MOSFET N-CH 600V 64A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1040W (Tc)
• Rds On (Max) @ Id, Vgs: 96 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

Package: TO-264-3, TO-264AA

GWM120-0075P3-SL

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 118A
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Flat Leads
• Supplier Device Package: ISOPLUS-DIL?

Package: 17-SMD, Flat Leads

CS19-08HO1S-TUBE

IXYS

THYRISTOR PHASE 19A 800V TO-263

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 28mA
• Voltage - On State (Vtm) (Max): 1.6V
• Current - On State (It (AV)) (Max): 19A
• Current - On State (It (RMS)) (Max): 29A
• Current - Hold (Ih) (Max): 50mA
• Current - Off State (Max): 5mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MCC95-14IO1B

IXYS

MOD THYRISTOR DUAL 1400V TO240AA

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 116A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

Package: TO-240AA

MCC255-12IO1

IXYS

MOD THYRISTOR DUAL 1200V Y1-CU

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 450A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

Package: Y1-CU

DSEP6-06BS

IXYS

DIODE GEN PURP 600V 6A TO252AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 2.66V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 5pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

DSEI2X161-06P

IXYS

DIODE MODULE 600V 147A ECO-PAC2

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 147A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 12mA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

Package: ECO-PAC2

VBO50-18NO7

IXYS

DIODE BRIDGE 50A 1800V PWS-A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
• Current - Reverse Leakage @ Vr: 100µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-A
• Supplier Device Package: PWS-A

Package: PWS-A

VBO52-16NO7

IXYS

DIODE BRIDGE 52A 1600V PWS-D

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 52A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D

Package: PWS-D

VUO34-12NO1

IXYS

RECT BRIDGE 3PH 36A 1200V V1-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 36A
• Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1-A

Package: V1-A

VUO36-16NO8

IXYS

RECT BRIDGE 27A 1600V FO-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 27A
• Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A
• Current - Reverse Leakage @ Vr: 40µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 5-Square, FO-B
• Supplier Device Package: FO-B

Package: 5-Square, FO-B

LDS8621002-T2-960

IXYS

IC LED DRIVER RGLTR DIM 16TQFN

• Type: DC DC Regulator
• Topology: Switched Capacitor (Charge Pump)
• Internal Switch(s): Yes
• Number of Outputs: 2
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: -
• Current - Output / Channel: 96mA
• Frequency: 1.1MHz
• Dimming: PWM
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-WFQFN Exposed Pad
• Supplier Device Package: 16-TQFN (3x3)

Package: 16-WFQFN Exposed Pad

IXDE504PI

IXYS

IC GATE DRIVER 4A 8-DIP

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 9ns, 8ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Package: 8-DIP (0.300", 7.62mm)

IXDD509SIA

IXYS

IC GATE DRIVER 9A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 2.4V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 23ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

IXTP76N25TM

IXYS

MOSFET N-CH 250V 76A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250 V
• Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4920 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 44mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Isolated Tab
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Package: -

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IXYK200N65B3

IXYS

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 410 A
• Current - Collector Pulsed (Icm): 1100 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
• Power - Max: 1560 W
• Switching Energy: 5mJ (on), 4mJ (off)
• Input Type: Standard
• Gate Charge: 340 nC
• Td (on/off) @ 25°C: 60ns/370ns
• Test Condition: 400V, 100A, 0Ohm, 15V
• Reverse Recovery Time (trr): 108 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

Package: -

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IXTA36N30P-PDP

IXYS

MOSFET N-CH TO263

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Package: -

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IXFP90N20X3M

IXYS

MOSFET N-CH 200V 90A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Isolated Tab
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Package: -

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