Page 52 - IXYS Products | Heisener Electronics

IXGX120N60C2
IXYS

IGBT 600V 75A 830W PLUS TO-247

Package: TO-247-3

Stock7,040
IXGT60N60
IXYS

IGBT 600V 75A 300W TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,552
IXGR80N60B
IXYS

IGBT 600V ISOPLUS247

Package: ISOPLUS247?

Stock7,872
MWI30-12E6K
IXYS

MOD IGBT SIXPACK RBSOA 1200V E1

Package: E1

Stock4,480
IXFN100N10S1
IXYS

MOSFET N-CH 100V 100A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,440
IXTQ102N15T
IXYS

MOSFET N-CH 150V 102A TO-3P

Package: TO-3P-3, SC-65-3

Stock103,464
IXTP200N075T
IXYS

MOSFET N-CH 75V 200A TO-220

Package: TO-220-3

Stock3,232
IXTV36N50P
IXYS

MOSFET N-CH 500V 36A PLUS220

Package: TO-220-3, Short Tab

Stock3,600
IXFH30N50Q
IXYS

MOSFET N-CH 500V 30A TO-247AD

Package: TO-247-3

Stock3,008
IXTH52N65X
IXYS

MOSFET N-CH 650V 52A TO-247

Package: TO-247-3

Stock5,040
IXFX55N50F
IXYS

MOSFET N-CH 500V 55A PLUS247

Package: TO-247-3

Stock9,948
VVZB120-12IO1
IXYS

RECT BRIDGE 3PH 120V 1200V V2

Package: V2-PAK

Stock2,256
VTO70-14IO7
IXYS

RECT BRIDGE 3PH 1400V FO-T-A

Package: FO-T-A

Stock4,112
MCC95-16IO8B
IXYS

THYRISTOR MODULE 1600V TO-240AA

Package: TO-240AA

Stock4,304
VCC2X105-18IO7
IXYS

MOD THYRISTOR DUAL 1800V ECOPAC2

Package: ECO-PAC2

Stock4,672
VHF36-08IO5
IXYS

RECT BRIDGE 1PH 800V FO-F-A

Package: X118

Stock4,016
MCC26-12IO8B
IXYS

MOD THYRISTOR DUAL 1200V TO240AA

Package: TO-240AA

Stock5,280
SS150TC60110
IXYS

DIODE ARRAY SCHOTTKY 600V DE150

Package: 6-SMD, Flat Lead Exposed Pad

Stock5,840
VUO82-18NO7
IXYS

RECT BRIDGE 3PH 88A 1800V PWS-D

Package: PWS-D

Stock5,088
IXDE514SIAT/R
IXYS

IC GATE DRIVER 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,616

Part Number	Manufacturer	Description	Package	Stock
IXGX120N60C2	IXYS	IGBT 600V 75A 830W PLUS TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 830W Switching Energy: 1.7mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 40ns/120ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	Package: TO-247-3	Stock7,040
IXGT60N60	IXYS	IGBT 600V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Power - Max: 300W Switching Energy: 8mJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 50ns/300ns Test Condition: 480V, 60A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,552
IXGR80N60B	IXYS	IGBT 600V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	Package: ISOPLUS247?	Stock7,872
MWI30-12E6K	IXYS	MOD IGBT SIXPACK RBSOA 1200V E1 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 29A Power - Max: 130W Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.18nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	Package: E1	Stock4,480
IXFN100N10S1	IXYS	MOSFET N-CH 100V 100A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,440
IXTQ102N15T	IXYS	MOSFET N-CH 150V 102A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464
IXTP200N075T	IXYS	MOSFET N-CH 75V 200A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,232
IXTV36N50P	IXYS	MOSFET N-CH 500V 36A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock3,600
IXFH30N50Q	IXYS	MOSFET N-CH 500V 30A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,008
IXTH52N65X	IXYS	MOSFET N-CH 650V 52A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,040
IXFX55N50F	IXYS	MOSFET N-CH 500V 55A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,948
VVZB120-12IO1	IXYS	RECT BRIDGE 3PH 120V 1200V V2 Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 120A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V2-PAK	Package: V2-PAK	Stock2,256
VTO70-14IO7	IXYS	RECT BRIDGE 3PH 1400V FO-T-A Structure: Bridge, 3-Phase - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 70A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A	Package: FO-T-A	Stock4,112
MCC95-16IO8B	IXYS	THYRISTOR MODULE 1600V TO-240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 116A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock4,304
VCC2X105-18IO7	IXYS	MOD THYRISTOR DUAL 1800V ECOPAC2 Structure: Independent - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	Package: ECO-PAC2	Stock4,672
VHF36-08IO5	IXYS	RECT BRIDGE 1PH 800V FO-F-A Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 800V Current - On State (It (AV)) (Max): 36A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: X118	Package: X118	Stock4,016
MCC26-12IO8B	IXYS	MOD THYRISTOR DUAL 1200V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	Package: TO-240AA	Stock5,280
SS150TC60110	IXYS	DIODE ARRAY SCHOTTKY 600V DE150 Diode Configuration: 3 Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE150	Package: 6-SMD, Flat Lead Exposed Pad	Stock5,840
VUO82-18NO7	IXYS	RECT BRIDGE 3PH 88A 1800V PWS-D Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 88A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-D Supplier Device Package: PWS-D	Package: PWS-D	Stock5,088
IXDE514SIAT/R	IXYS	IC GATE DRIVER 14A 8-SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,616
SLMD480H12	IXYS	MONO SOLAR CELL 22MM X 35MM Power (Watts) - Max: 109mW Current @ Pmpp: 18mA Voltage @ Pmpp: 6.06V Current Short Circuit (Isc): 20mA Type: Monocrystalline Voltage - Open Circuit: 7.56V Operating Temperature: - Package / Case: Cell (12) Size / Dimension: 1.378" L x 0.276" W x 0.079" H (35.00mm x 22.00mm x 2.00mm)	Package: Cell (12)	Stock6,984
DSP25-12AT-TUB	IXYS	DIODE ARRAY GP 1200V 28A TO268AA Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 28A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 1200 V Operating Temperature - Junction: -40°C ~ 180°C Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA	Package: -	Request a Quote
DMA80I1600HA	IXYS	DIODE GEN PURP 1.6KV 80A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1600 V Capacitance @ Vr, F: 43pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock8,064
IXYA20N120B4HV	IXYS	IGBT 1200V 20A GENX4 XPT TO263D2 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 76 A Current - Collector Pulsed (Icm): 130 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 375 W Switching Energy: 3.9mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 44 nC Td (on/off) @ 25°C: 15ns/200ns Test Condition: 960mV, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 47 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	Package: -	Stock693
IXYA20N65C3	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 105 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 230 W Switching Energy: 430µJ (on), 650µJ (off) Input Type: Standard Gate Charge: 30 nC Td (on/off) @ 25°C: 19ns/80ns Test Condition: 400V, 20A, 20Ohm, 15V Reverse Recovery Time (trr): 34 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	Package: -	Request a Quote
IXTA1N80P	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote
N0634LC380	IXYS	SCR 3.8KV 1228A W10 Voltage - Off State: 3.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 2.8 V Current - On State (It (AV)) (Max): 634 A Current - On State (It (RMS)) (Max): 1228 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7700A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AB, B-PuK Supplier Device Package: W10	Package: -	Request a Quote
DSSK16-01AS-TRL	IXYS	DIODE ARR SCHOTT 100V 8A TO263AA Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io) (per Diode): 8A Voltage - Forward (Vf) (Max) @ If: 810 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	Package: -	Request a Quote