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IXYS |
IGBT 600V 75A 540W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 400A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
- Power - Max: 540W
- Switching Energy: 1.38mJ (on), 3.5mJ (off)
- Input Type: Standard
- Gate Charge: 230nC
- Td (on/off) @ 25°C: 31ns/320ns
- Test Condition: 480V, 50A, 3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,088 |
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IXYS |
IGBT 600V 60A 250W TO247AD
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 70A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
- Power - Max: 250W
- Switching Energy: 1.6mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 35A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD (IXDH)
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Package: TO-3P-3 Full Pack |
Stock2,320 |
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IXYS |
IGBT 650V 116A 455W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 116A
- Current - Collector Pulsed (Icm): 250A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 455W
- Switching Energy: 3.13mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 95nC
- Td (on/off) @ 25°C: 37ns/145ns
- Test Condition: 400V, 60A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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Package: TO-247-3 |
Stock5,664 |
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IXYS |
IGBT 300V 223W TO220AB
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 250A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
- Power - Max: 223W
- Switching Energy: 120µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 76nC
- Td (on/off) @ 25°C: 21ns/113ns
- Test Condition: 200V, 21A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock6,880 |
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IXYS |
1700V/108A HIGH VOLTAGE XPT IGB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 108A
- Current - Collector Pulsed (Icm): 255A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
- Power - Max: 937W
- Switching Energy: 5.9mJ (on), 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 28ns/150ns
- Test Condition: 850V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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Package: TO-247-3 |
Stock6,832 |
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IXYS |
MOSFET N-CH 800V 27A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 27A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock5,568 |
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IXYS |
MOSFET N-CH 1KV 3.5A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock2,528 |
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IXYS |
MOSFET N-CH 200V 150A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,712 |
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IXYS |
MOSFET N-CH 150V 120A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock2,240 |
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IXYS |
MOSFET N-CH 75V 230A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock5,504 |
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IXYS |
RECT BRIDGE 3PH 135A 1600V E2
- Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 135A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 78mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
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Package: E2 |
Stock3,056 |
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IXYS |
RECT BRIDGE 1PH 1400V FO-T-A
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 53A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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Package: FO-T-A |
Stock6,640 |
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IXYS |
SCR THYRISTOR CA 1800V WC-500
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 700A
- Current - On State (It (RMS)) (Max): 1331A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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Package: WC-500 |
Stock3,248 |
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IXYS |
MOD THYRISTOR/DIODE 1800V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 287A
- Current - On State (It (RMS)) (Max): 450A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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Package: Y2-DCB |
Stock3,344 |
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IXYS |
DIODE MODULE 32KV 4.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 32000V
- Current - Average Rectified (Io) (per Diode): 4.7A
- Voltage - Forward (Vf) (Max) @ If: 23V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 32000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock3,968 |
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IXYS |
DIODE MODULE 2.4KV 10A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2400V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 40A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 2400V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock4,384 |
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IXYS |
DIODE MODULE 200V 71A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 71A
- Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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Package: SOT-227-4, miniBLOC |
Stock3,328 |
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IXYS |
DIODE BRIDGE 1600V 240A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
- Current - Reverse Leakage @ Vr: 200µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: PWS-E-Flat
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Package: Module |
Stock6,320 |
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IXYS |
RECT BRIDGE 3PH 1200V ECO-PAC1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 28A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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Package: ECO-PAC1 |
Stock7,920 |
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IXYS |
IC GATE DRIVER SGL 9A 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 23ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,208 |
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IXYS |
TRIAC ALTERNISTOR 600V 16A TO263
- Triac Type: Alternistor - Snubberless
- Voltage - Off State: 600 V
- Current - On State (It (RMS)) (Max): 16 A
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
- Current - Gate Trigger (Igt) (Max): 50 mA
- Current - Hold (Ih) (Max): 50 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
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Package: - |
Request a Quote |
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IXYS |
MDNA210UB2200PTED-PC
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
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Package: - |
Request a Quote |
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IXYS |
BIPOLAR MODULE - DIODE TO-240AA
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1.3 mA @ 600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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Package: - |
Stock108 |
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IXYS |
SCR 1.4KV 1580A W91
- Voltage - Off State: 1.4 kV
- Voltage - Gate Trigger (Vgt) (Max): 2.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Voltage - On State (Vtm) (Max): 2 V
- Current - On State (It (AV)) (Max): 795 A
- Current - On State (It (RMS)) (Max): 1580 A
- Current - Hold (Ih) (Max): 300 mA
- Current - Off State (Max): 30 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -60°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W91
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Package: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 220A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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IXYS |
SCR 2.2KV 2790A WP6
- Voltage - Off State: 2.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.65 V
- Current - On State (It (AV)) (Max): 1410 A
- Current - On State (It (RMS)) (Max): 2790 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: WP6
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Package: - |
Request a Quote |
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IXYS |
SCR 6KV 975A W10
- Voltage - Off State: 6 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.7 V
- Current - On State (It (AV)) (Max): 500 A
- Current - On State (It (RMS)) (Max): 975 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W10
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Package: - |
Request a Quote |
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IXYS |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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