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Infineon Technologies |
MOSFET N-CH 80V 13A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 13A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 36µA | 18 nC @ 4.5 V | 2340 pF @ 40 V | ±20V | - | 69W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET_(20V 40V) PG-TO263-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock4,536 |
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MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2V @ 130µA | 80 nC @ 10 V | 5700 pF @ 25 V | +5V, -16V | - | 88W (Tc) | 6.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 47µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TTFN-9-3
- Package / Case: 9-PowerTDFN
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Package: - |
Stock14,670 |
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MOSFET (Metal Oxide) | 80 V | 15.6A (Ta), 99A (Tc) | 4.5V, 10V | 2.3V @ 47µA | 38 nC @ 10 V | 3250 pF @ 40 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 4.6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-3 | 9-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 107W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Stock126 |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 6V, 10V | 3.3V @ 50µA | 44 nC @ 10 V | 3375 pF @ 30 V | ±20V | - | 3W (Ta), 107W (Tc) | 4mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
TRENCH <= 40V PG-VSON-6
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN Dual (2x2)
- Package / Case: 6-PowerVDFN
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Package: - |
Stock23,865 |
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MOSFET (Metal Oxide) | 40 V | - | - | - | - | - | ±16V | - | - | - | - | Surface Mount | 6-PQFN Dual (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 40V 50A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock17,070 |
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MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 85µA | 59 nC @ 10 V | 3900 pF @ 25 V | +5V, -16V | - | 58W (Tc) | 10.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 79A TDSON-8-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 79A (Tc) | 4.5V, 10V | 2.3V @ 49µA | 20 nC @ 4.5 V | 2700 pF @ 50 V | ±20V | - | 83W (Tc) | 7mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 40A HDSOP-10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 40A (Tc) | - | 4.5V @ 570µA | 51 nC @ 10 V | 2102 pF @ 400 V | ±20V | - | 266W (Tc) | 75mOhm @ 11.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
HIGH POWER_NEW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | 4975 pF @ 400 V | ±20V | - | 357W (Tc) | 40mOhm @ 24.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 249µA
- Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,199 |
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MOSFET (Metal Oxide) | 40 V | 43A (Ta), 201A (Tc) | 6V, 10V | 3.4V @ 249µA | 315 nC @ 10 V | 15000 pF @ 20 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.15mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 700V 6A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27.8W (Tc)
- Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,500 |
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MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 4.5V @ 200µA | 22 nC @ 10 V | 615 pF @ 100 V | ±20V | - | 27.8W (Tc) | 660mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 57A (Tc) | 10V | 5V @ 250µA | 150 nC @ 10 V | 5860 pF @ 25 V | ±30V | - | 360W (Tc) | 33mOhm @ 35A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
SILICON CARBIDE MOSFET, PG-TO247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
- Vgs (Max): +20V, -2V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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Package: - |
Stock306 |
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SiCFET (Silicon Carbide) | 650 V | 50A (Tc) | 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | 1393 pF @ 400 V | +20V, -2V | - | 176W (Tc) | 50mOhm @ 25A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 100V 35A/354A HDSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 35A (Ta), 354A (Tc) | 6V, 10V | 3.8V @ 275µA | 208 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET P-CH 60V 2.8A SOT223-4
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 520µA
- Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock4,914 |
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MOSFET (Metal Oxide) | 60 V | 2.8A (Ta) | 10V | 4V @ 520µA | 20.2 nC @ 10 V | 790 pF @ 30 V | ±20V | - | 1.8W (Ta), 4.2W (Tc) | 125mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | 4900 pF @ 30 V | ±20V | - | 79W (Tc) | 7.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
IC MOSFET HS PWR SW 35A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock11,061 |
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MOSFET (Metal Oxide) | 80 V | 20A (Ta), 129A (Tc) | 6V, 10V | 3.8V @ 85µA | 81 nC @ 10 V | 3800 pF @ 40 V | ±20V | - | 3W (Ta), 150W (Tc) | 4mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 724µA
- Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock13,305 |
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MOSFET (Metal Oxide) | 60 V | 19.6A (Tc) | 4.5V, 10V | 2V @ 724µA | 14.8 nC @ 10 V | 1400 pF @ 30 V | ±20V | - | 83W (Tc) | 80mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 700µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 675µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 3.9V @ 675µA | 66 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 160W (Tc) | 280mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 15A/40A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 30 nC @ 10 V | 2400 pF @ 15 V | ±20V | - | 2.1W (Ta), 45W (Tc) | 5.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 85A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock79,641 |
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MOSFET (Metal Oxide) | 40 V | 85A (Tc) | - | 4V @ 150µA | 89 nC @ 10 V | 6085 pF @ 25 V | ±20V | - | 88W (Tc) | 7.3mOhm @ 85A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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MOSFET (Metal Oxide) | 100 V | 16A (Tc) | - | 4V @ 250µA | 44 nC @ 10 V | 640 pF @ 25 V | - | - | - | 115mOhm @ 10A, 10V | - | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7A TO252-3-313
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,608 |
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MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 4.5V @ 140µA | 14 nC @ 10 V | 679 pF @ 400 V | ±20V | - | 43W (Tc) | 360mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 3.5V @ 340µA | 22 nC @ 10 V | 790 pF @ 100 V | ±20V | - | 83W (Tc) | 385mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
IGBT
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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