|
|
Infineon Technologies |
MOSFET N-CH 900V 5.1A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 83W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
|
|
Infineon Technologies |
OPTIMOSTM5LINEARFET80V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 217W (Tc)
- Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 23A (Ta), 198A (Tc) | 10V | 3.6V @ 115µA | 96 nC @ 10 V | 6800 pF @ 40 V | ±20V | - | 3W (Ta), 217W (Tc) | 2.55mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 600V 48A TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 164W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 4V @ 800µA | 67 nC @ 10 V | 2895 pF @ 400 V | ±20V | - | 164W (Tc) | 60mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
|
|
Infineon Technologies |
MOSFET N-CH 40V 12A/40A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock24,936 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 14µA | 24 nC @ 10 V | 1900 pF @ 20 V | ±20V | - | 2.1W (Ta), 35W (Tc) | 9.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
|
|
Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 4V @ 125µA | 80 nC @ 10 V | 3140 pF @ 25 V | ±20V | - | 190W (Tc) | 9.1mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34.7W (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock1,497 |
|
MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86 nC @ 10 V | 2340 pF @ 100 V | ±20V | - | 34.7W (Tc) | 150mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 55µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
|
Package: - |
Stock1,089 |
|
MOSFET (Metal Oxide) | 80 V | 18.5A (Ta), 99A (Tc) | 6V, 10V | 3.8V @ 55µA | 54 nC @ 10 V | 2500 pF @ 40 V | ±20V | - | 3.8W (Ta), 107W (Tc) | 5.5mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
HIGH POWER_NEW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 860µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 16.4A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4-1
- Package / Case: 4-PowerTSFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 4.5V @ 860µA | 68 nC @ 10 V | 3288 pF @ 400 V | ±20V | - | 195W (Tc) | 65mOhm @ 16.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4-1 | 4-PowerTSFN |
|
|
Infineon Technologies |
MOSFET N-CH 25V 22A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock74,508 |
|
MOSFET (Metal Oxide) | 25 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 36 nC @ 10 V | 2500 pF @ 12 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 1.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 560V 16A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 675µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
|
Package: - |
Stock558 |
|
MOSFET (Metal Oxide) | 560 V | 16A (Tc) | 10V | 3.9V @ 675µA | 66 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 160W (Tc) | 280mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
|
|
Infineon Technologies |
MOSFET N-CH 60V 53A/454A HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
|
Package: - |
Stock10,728 |
|
MOSFET (Metal Oxide) | 60 V | 53A (Ta), 454A (Tc) | 6V, 10V | 3.3V @ 280µA | 261 nC @ 10 V | 21000 pF @ 30 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 0.75mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
|
|
Infineon Technologies |
MOSFET N-CH 20V 5.7A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8™
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | - | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | 650 pF @ 15 V | - | - | - | 35mOhm @ 3.8A, 4.5V | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
Infineon Technologies |
SIC_DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 429W (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-11
- Package / Case: TO-247-4
|
Package: - |
Stock720 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | 18V, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | 2667 pF @ 800 V | +23V, -5V | - | 429W (Tc) | 25mOhm @ 43A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
|
|
Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1.448mA
- Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
- Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-U04
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock14,859 |
|
MOSFET (Metal Oxide) | 25 V | 75A (Ta), 789A (Tc) | 4.5V, 10V | 2V @ 1.448mA | 254 nC @ 10 V | 17000 pF @ 12 V | ±16V | - | 2.5W (Ta), 278W (Tc) | 0.29mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 35mOhm @ 3.7A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8™
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | - | 1V @ 250µA | 27 nC @ 10 V | 520 pF @ 25 V | - | - | - | 35mOhm @ 3.7A, 10V | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
Infineon Technologies |
MOSFET P-CH 20V 3.6A MICRO8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8™
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | - | 700mV @ 250µA (Min) | 20 nC @ 4.5 V | 590 pF @ 15 V | - | - | - | 90mOhm @ 2.4A, 4.5V | - | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
Infineon Technologies |
MOSFET N-CH 600V 6A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock7,413 |
|
MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4V @ 80µA | 9 nC @ 10 V | 363 pF @ 400 V | ±20V | - | 30W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 40V 54A/440A HSOF-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
|
Package: - |
Stock4,275 |
|
MOSFET (Metal Oxide) | 40 V | 54A (Ta), 440A (Tc) | 6V, 10V | 3.3V @ 250µA | 152 nC @ 10 V | 7900 pF @ 20 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 0.7mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
|
|
Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock5,700 |
|
MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 3.8V @ 91µA | 68 nC @ 10 V | 4750 pF @ 37.5 V | ±20V | - | 150W (Tc) | 4.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
AUIRLU3114Z - 20V-40V N-CHANNEL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | 3810 pF @ 25 V | ±16V | - | 140W (Tc) | 4.9mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Infineon Technologies |
MOSFET N-CH 700V 6A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | 211 pF @ 400 V | ±16V | - | 30.5W (Tc) | 900mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
|
|
Infineon Technologies |
MOSFET N-CH 25V 39A/100A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 12 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock57,087 |
|
MOSFET (Metal Oxide) | 25 V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 64 nC @ 10 V | 4700 pF @ 12 V | ±20V | - | 2.5W (Ta), 96W (Tc) | 1mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET 800V TDSON-8
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
|
|
Infineon Technologies |
HIGH POWER_NEW PG-HDSOP-22
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
|
|
Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 75A (Tc) | 10V | 5V @ 250µA | 150 nC @ 10 V | 5380 pF @ 50 V | ±20V | - | 341W (Tc) | 21mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
Infineon Technologies |
MOSFET N-CH 100V 100A 8TDSON-34
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-34
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock34,938 |
|
MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3.8V @ 90µA | 78 nC @ 10 V | 5200 pF @ 50 V | ±20V | - | 167W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |