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Infineon Technologies Products - PMIC - Gate Drivers

Records 986
Page  31/33
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AUIRS2110S
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
Package: 16-SOIC (0.295", 7.50mm Width)
Stock2,848
Independent
2
IGBT, N-Channel MOSFET
3 V ~ 20 V
6V, 9.5V
2.5A, 2.5A
Non-Inverting
500V
25ns, 15ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot AUIRS2004S
Infineon Technologies

IC DRVIER HALF-BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 160ns, 70ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock124,560
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200V
160ns, 70ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AUIRS2003S
Infineon Technologies

IC DRVIER HALF-BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock7,360
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Inverting, Non-Inverting
200V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AUIR2085S
Infineon Technologies

IC DVR HALF-BRDG SELF OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Stock2,752
Synchronous
2
N-Channel MOSFET
10 V ~ 15 V
-
1A, 1A
RC Input Circuit
100V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRS2609DSTRPBF
Infineon Technologies

IC DRIVER HALF BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock4,272
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS2607DSPBF
Infineon Technologies

IC DVR HI/LOW SIDE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock3,600
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS26072DSTRPBF
Infineon Technologies

IC DVR HI/LOW SIDE 600V 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock2,352
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS2332STRPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
Package: 28-SOIC (0.295", 7.50mm Width)
Stock4,400
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IRS2332JPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE PLCC44

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Package: 44-LCC (J-Lead), 32 Leads
Stock6,432
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
hot IRS2332DSTRPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
Package: 28-SOIC (0.295", 7.50mm Width)
Stock21,540
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IRS2332DJPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE PLCC44

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Package: 44-LCC (J-Lead), 32 Leads
Stock6,752
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
IRS2330STRPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
Package: 28-SOIC (0.295", 7.50mm Width)
Stock6,400
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IRS2330JPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE PLCC44

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Package: 44-LCC (J-Lead), 32 Leads
Stock7,872
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
IRS2330DSTRPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
Package: 28-SOIC (0.295", 7.50mm Width)
Stock6,752
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IRS2330DJPBF
Infineon Technologies

IC DVR 3-PHASE BRIDGE PLCC44

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Package: 44-LCC (J-Lead), 32 Leads
Stock2,592
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
hot IRS21962STRPBF
Infineon Technologies

IC DVR HI SIDE DUAL 600V 16SOIC

  • Driven Configuration: High-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Package: 16-SOIC (0.154", 3.90mm Width)
Stock360,000
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.6V, 3.5V
500mA, 500mA
Non-Inverting
600V
25ns, 25ns
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot IRS21956STRPBF
Infineon Technologies

IC DVR HI/LOW SIDE 600V 20SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
Package: 20-SOIC (0.295", 7.50mm Width)
Stock46,416
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3.5V
500mA, 500mA
Non-Inverting
600V
25ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
IRS21858STRPBF
Infineon Technologies

IC DVR HI SIDE DUAL 600V 16SOIC

  • Driven Configuration: High-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 60ns, 20ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Package: 16-SOIC (0.154", 3.90mm Width)
Stock4,384
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3.5V
290mA, 600mA
Non-Inverting
600V
60ns, 20ns
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot IRS21856STRPBF
Infineon Technologies

IC DVR HI/LOW SIDE 600V 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 30ns, 20ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
Package: 14-SOIC (0.154", 3.90mm Width)
Stock201,036
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3.5V
500mA, 500mA
Non-Inverting
600V
30ns, 20ns
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot IRS21850STRPBF
Infineon Technologies

IC DVR HIGH SIDE 600V 8SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock38,748
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
4A, 4A
Non-Inverting
600V
15ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS2124SPBF
Infineon Technologies

IC DVR HIGH SIDE 600V 8SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 80ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock4,272
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
-
500mA, 500mA
Inverting
600V
80ns, 80ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS2123SPBF
Infineon Technologies

IC DVR HIGH SIDE 600V 8SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 80ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock2,272
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
-
500mA, 500mA
Non-Inverting
600V
80ns, 80ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS21171SPBF
Infineon Technologies

IC DVR HIGH SIDE 600V 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 75ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock5,088
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
75ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IRS210614STRPBF
Infineon Technologies

IC DVR HI/LOW SIDE 600V SO-14

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
Package: 14-SOIC (0.154", 3.90mm Width)
Stock67,584
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
100ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
IR3519STRPBF
Infineon Technologies

IC MOSFET GATE DRIVER SON-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 7.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 35V
  • Rise / Fall Time (Typ): 5ns, 5ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SON
Package: 8-SOIC (0.154", 3.90mm Width)
Stock7,648
Synchronous
2
N-Channel MOSFET
6.5 V ~ 7.5 V
-
2A, 2A
Non-Inverting
35V
5ns, 5ns
0°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SON
IR3519MTRPBF
Infineon Technologies

IC MOSFET GATE DRIVER 8-MLPD

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 7.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 35V
  • Rise / Fall Time (Typ): 5ns, 5ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x3)
Package: 8-VDFN Exposed Pad
Stock5,840
Synchronous
2
N-Channel MOSFET
6.5 V ~ 7.5 V
-
2A, 2A
Non-Inverting
35V
5ns, 5ns
0°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-MLP (3x3)
hot IR2151PBF
Infineon Technologies

IC DRIVER HALF BRIDGE DIP-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 125mA, 250mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
Package: 8-DIP (0.300", 7.62mm)
Stock85,200
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
-
125mA, 250mA
RC Input Circuit
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
IR11662SPBF
Infineon Technologies

IC CNTROL SMART RECTIFIER 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 11.4 V ~ 18 V
  • Logic Voltage - VIL, VIH: 2V, 2.15V
  • Current - Peak Output (Source, Sink): 1A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 21ns, 10ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock5,152
Single
1
N-Channel MOSFET
11.4 V ~ 18 V
2V, 2.15V
1A, 4A
Non-Inverting
-
21ns, 10ns
-25°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS26072DSPBF
Infineon Technologies

IC DVR HI/LOW SIDE 600V 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Stock3,472
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IRS2332SPBF
Infineon Technologies

IC BRIDGE DVR 3PH 600V 28-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
Package: 28-SOIC (0.295", 7.50mm Width)
Stock46,188
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
80ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC