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Infineon Technologies |
IGBT 600V 12A 100W TO251-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Power - Max: 100W
- Switching Energy: 330µJ
- Input Type: Standard
- Gate Charge: 48nC
- Td (on/off) @ 25°C: 12ns/127ns
- Test Condition: 400V, 6A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 68ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PG-TO251-3
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,784 |
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Infineon Technologies |
IGBT 650V 18A 70W PG-TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 18A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 70W
- Switching Energy: 70µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 22nC
- Td (on/off) @ 25°C: 11ns/115ns
- Test Condition: 400V, 4A, 48 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock9,516 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,504 |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7768pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 51A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,000 |
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Infineon Technologies |
MOSFET N-CH 75V 160A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock7,344 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,272 |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO220-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,440 |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,584 |
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Infineon Technologies |
TRANS NPN DARL 60V 0.5A SOT-23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 360mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock92,142 |
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Infineon Technologies |
TRANSISTOR RF NPN 2.5V TSFP-4
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
- Gain: 22.5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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Package: 4-SMD, Flat Leads |
Stock2,480 |
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Infineon Technologies |
IC REG LINEAR 5V 150MA 14DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 100mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1µA ~ 2mA
- PSRR: 66dB (100Hz)
- Control Features: Enable, Reset
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock18,798 |
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Infineon Technologies |
IC NOVALITHIC 1/2 BRIDGE TO263-7
- Output Configuration: Half Bridge
- Applications: DC Motors, General Purpose
- Interface: Logic
- Load Type: Inductive
- Technology: DMOS
- Rds On (Typ): 9 mOhm LS, 7 mOhm HS
- Current - Output / Channel: 40A
- Current - Peak Output: 60A
- Voltage - Supply: 5.5 V ~ 27.5 V
- Voltage - Load: 5.5 V ~ 27.5 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Latch Function, Slew Rate Controlled, Status Flag
- Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: P-TO-263-7
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Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Stock26,472 |
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Infineon Technologies |
TVS DIODE 14VWM 21VC TSLP2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 14V (Max)
- Voltage - Breakdown (Min): 14.5V (Typ)
- Voltage - Clamping (Max) @ Ipp: 21V (Typ)
- Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 8.5pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
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Package: SOD-882 |
Stock6,714 |
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Infineon Technologies |
IMOTION
- Motor Type - Stepper: Multiphase
- Motor Type - AC, DC: AC, Synchronous
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (3)
- Interface: Analog, PWM, UART
- Technology: IGBT
- Step Resolution: -
- Applications: Fan Motor Driver
- Current - Output: 2A
- Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
- Voltage - Load: 600V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
- Supplier Device Package: PG-DSO-22-1
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Package: - |
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Infineon Technologies |
SEMICONDUCTOR OTHER
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 64MBIT PARALLEL 48VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (8.15x6.15)
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Package: - |
Request a Quote |
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Infineon Technologies |
IC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
SIC 2N-CH 1200V 200A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock54 |
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Infineon Technologies |
LOW POWER ECONO AG-ECONO3-4
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock30 |
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Infineon Technologies |
SEMPER
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Gbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
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Infineon Technologies |
IGBT MOD 3300V 450A AGXHP100-3
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 1000000 W
- Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-XHP100-3
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Package: - |
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Infineon Technologies |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
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Infineon Technologies |
LOW POWER EASY AG-EASY1BM-2
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Infineon Technologies |
DIODE GP 4.5KV 4450A D17226K-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500 V
- Current - Average Rectified (Io): 4450A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: BG-D17226K-1
- Operating Temperature - Junction: 140°C (Max)
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Package: - |
Stock3 |
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Infineon Technologies |
IC MCU 32BIT 160KB FLASH 112BGA
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit Single-Core
- Speed: 144MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 83
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 112-LFBGA
- Supplier Device Package: 112-PFBGA (10x10)
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Package: - |
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Infineon Technologies |
ASYNC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 4.0625MB FLSH 144QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 250MHz
- Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 116
- Program Memory Size: 4.0625MB (4.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 256K x 8
- RAM Size: 768K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 70x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-TEQFP (20x20)
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Package: - |
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Infineon Technologies |
IC FLASH 256MBIT SPI/QUAD 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: - |
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