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Infineon Technologies |
IGBT 600V 11A 63W D2PAK
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 11A
- Current - Collector Pulsed (Icm): 22A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Power - Max: 63W
- Switching Energy: 73µJ (on), 47µJ (off)
- Input Type: Standard
- Gate Charge: 12nC
- Td (on/off) @ 25°C: 22ns/100ns
- Test Condition: 400V, 4A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 93ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock24,816 |
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock5,328 |
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Infineon Technologies |
MOSFET N-CH 20V 39A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,232 |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,392 |
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock88,944 |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock39,240 |
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Infineon Technologies |
MOSFET N-CH 200V 3.7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock205,224 |
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Infineon Technologies |
MOSFET N-CH 650V 60A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 431W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,504 |
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Infineon Technologies |
FET RF LDMOS 150W H36248-2
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 18dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.2A
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36248-2
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Package: 2-Flatpack, Fin Leads |
Stock7,904 |
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Infineon Technologies |
TRANS 2PNP 45V 0.1A SOT363
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock7,744 |
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Infineon Technologies |
IC REG BUCK ADJ 14A SYNC QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 14A
- Frequency - Switching: 300kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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Package: 15-PowerVQFN |
Stock6,352 |
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Infineon Technologies |
IC LED DRVR RGLTR DIM 1.5A 8DSO
- Type: DC DC Regulator
- Topology: Step-Down (Buck)
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 4.5V
- Voltage - Supply (Max): 60V
- Voltage - Output: -
- Current - Output / Channel: 1.5A
- Frequency: 1MHz
- Dimming: Analog, PWM
- Applications: Lighting
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock172,650 |
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Infineon Technologies |
IC EEPROM 2KBIT INTELLIG MFCC1-2
- Type: RFID Transponder
- Frequency: 13.56MHz
- Standards: ISO 15693, ISO 18000-3
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -25°C ~ 70°C
- Package / Case: MFCC1 Chip Card Module
- Supplier Device Package: S-MFCC1-2-1
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Package: MFCC1 Chip Card Module |
Stock8,982 |
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Infineon Technologies |
IC MCU/TX/ADC/LF RCVR 38-TSSOP
- Frequency: 315MHz, 434MHz, 868MHz, 915MHz
- Applications: Remote Control, Remote Metering
- Modulation or Protocol: ASK, FSK
- Data Rate (Max): 20 kbps
- Power - Output: 10dBm
- Current - Transmitting: 17.1mA
- Data Interface: PCB, Surface Mount
- Antenna Connector: PCB, Surface Mount
- Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
- Features: -
- Voltage - Supply: 1.9 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C
- Package / Case: 38-TFSOP (0.173", 4.40mm Width)
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Package: 38-TFSOP (0.173", 4.40mm Width) |
Stock3,348 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
AUIRLU3114Z - 20V-40V N-CHANNEL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
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Infineon Technologies |
SWITI MTSI-L SWITCHING IC
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1200V 800A
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 800 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock24 |
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Infineon Technologies |
IC FLASH 1GBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 102 MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: - |
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Infineon Technologies |
IGBT 1200 V 15A TO247-3-46
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
- Power - Max: 200 W
- Switching Energy: 700µJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 92 nC
- Td (on/off) @ 25°C: 18ns/240ns
- Test Condition: 600V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): 340 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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Package: - |
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Infineon Technologies |
IC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IC SS CLOCK GENERATOR 8SOIC
- Type: Spread Spectrum Clock Generator
- PLL: Yes with Bypass
- Input: LVCMOS, Crystal
- Output: Clock
- Number of Circuits: 1
- Ratio - Input:Output: 1:3
- Differential - Input:Output: No/No
- Frequency - Max: 166MHz
- Divider/Multiplier: Yes/No
- Voltage - Supply: 2.25V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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Package: - |
Stock7,020 |
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Infineon Technologies |
IC PWR SWITCH HI SIDE TO220-5
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 150A 20MW
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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