|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5MBIT 200MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
|
Package: 165-TBGA |
Stock2,080 |
|
SRAM | SRAM - Synchronous | 4.5Mb (256K x 18) | Parallel | 200MHz | - | 3.1ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
|
|
|
Adesto Technologies |
IC FLASH 32MBIT 66MHZ 8VDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 32Mb (512 Bytes x 8192 pages)
- Memory Interface: SPI
- Clock Frequency: 66MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-VDFN (8x6)
|
Package: 8-VDFN Exposed Pad |
Stock6,592 |
|
FLASH | FLASH | 32Mb (512 Bytes x 8192 pages) | SPI | 66MHz | 6ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-VDFN Exposed Pad | 8-VDFN (8x6) |
|
|
|
Micron Technology Inc. |
IC FLASH 256GBIT 153TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: 153-TFBGA (11.5x13)
|
Package: - |
Stock6,496 |
|
FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | - | 153-TFBGA (11.5x13) |
|
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 200MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.1ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
|
Package: 165-TBGA |
Stock5,200 |
|
SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
Micron Technology Inc. |
IC FLASH 128MBIT 75NS 64EASYBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8, 8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 75ns
- Access Time: 75ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-TBGA
- Supplier Device Package: 64-EasyBGA (10x13)
|
Package: 64-TBGA |
Stock3,024 |
|
FLASH | FLASH - NOR | 128Mb (16M x 8, 8M x 16) | Parallel | - | 75ns | 75ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-TBGA | 64-EasyBGA (10x13) |
|
|
|
Cypress Semiconductor Corp |
IC SRAM 1MBIT 70NS 32TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP I
|
Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock4,208 |
|
SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP I |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 36MBIT 250MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.71 V ~ 1.89 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-LFBGA (13x15)
|
Package: 165-LBGA |
Stock5,696 |
|
SRAM | SRAM - Synchronous, DDR II | 36Mb (1M x 36) | Parallel | 250MHz | - | - | 1.71 V ~ 1.89 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-LFBGA (13x15) |
|
|
|
Micron Technology Inc. |
IC SDRAM 256MBIT 100MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 7ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (8x13)
|
Package: 90-VFBGA |
Stock6,720 |
|
DRAM | SDRAM - Mobile LPSDR | 256Mb (8M x 32) | Parallel | 100MHz | 15ns | 7ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |
|
|
|
Microchip Technology |
IC OTP 2MBIT 120NS 32TSOP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 32-TSOP
|
Package: 32-TFSOP (0.724", 18.40mm Width) |
Stock5,280 |
|
EPROM | EPROM - OTP | 2Mb (256K x 8) | Parallel | - | - | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.724", 18.40mm Width) | 32-TSOP |
|
|
|
Microchip Technology |
IC OTP 1MBIT 150NS 32VSOP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 150ns
- Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.488", 12.40mm Width)
- Supplier Device Package: 32-VSOP
|
Package: 32-TFSOP (0.488", 12.40mm Width) |
Stock5,008 |
|
EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 150ns | 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.488", 12.40mm Width) | 32-VSOP |
|
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 2MBIT 133MHZ 208QFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 2Mb (64K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
|
Package: 208-BFQFP |
Stock6,000 |
|
SRAM | SRAM - Dual Port, Synchronous | 2Mb (64K x 36) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 208-BFQFP | 208-PQFP (28x28) |
|
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 30NS 84PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 30ns
- Access Time: 30ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-LCC (J-Lead)
- Supplier Device Package: 84-PLCC (29.21x29.21)
|
Package: 84-LCC (J-Lead) |
Stock6,384 |
|
SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 30ns | 30ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 84-LCC (J-Lead) | 84-PLCC (29.21x29.21) |
|
|
|
Cypress Semiconductor Corp |
IC SRAM 18MBIT 250MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
|
Package: 165-LBGA |
Stock24,000 |
|
SRAM | SRAM - Synchronous, QDR II | 18Mb (1M x 18) | Parallel | 250MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
|
|
Micron Technology Inc. |
IC FLASH 4GBIT 63VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (9x11)
|
Package: 63-VFBGA |
Stock5,936 |
|
FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA (9x11) |
|
|
|
Alliance Memory, Inc. |
IC SRAM 2MBIT 15NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,984 |
|
SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 12NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP
|
Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock6,704 |
|
SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
|
|
Micron Technology Inc. |
IC FLASH 64MBIT 108MHZ 16SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (16M x 4)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SO W
|
Package: 16-SOIC (0.295", 7.50mm Width) |
Stock6,512 |
|
FLASH | FLASH - NOR | 64Mb (16M x 4) | SPI | 108MHz | 8ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO W |
|
|
|
Microchip Technology |
IC EEPROM 16KBIT 3MHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8, 1K x 16)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock5,328 |
|
EEPROM | EEPROM | 16Kb (2K x 8, 1K x 16) | SPI | 3MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
|
Microchip Technology |
IC EEPROM 4KBIT 2MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (256 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock2,880 |
|
EEPROM | EEPROM | 4Kb (256 x 16) | SPI | 2MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
|
STMicroelectronics |
IC EEPROM 2KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock617,112 |
|
EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 10ms | 900ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
|
Micron Technology Inc. |
IC MOBILE DDR 512M NAX16 FBGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,568 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Cypress Semiconductor Corp |
IC SRAM SYNC 100TQFP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,792 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
GigaDevice Semiconductor (HK) Limited |
IC FLASH 16MBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 60µs, 2.4ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 2.1V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (5x6)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 16Mbit | SPI - Quad I/O, QPI | 133 MHz | 60µs, 2.4ms | 6 ns | 1.65V ~ 2.1V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (5x6) |
|
|
|
GigaDevice Semiconductor (HK) Limited |
LINEAR IC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micron Technology Inc. |
IC SRAM 4MBIT PAR 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, ZBT
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20.1)
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Synchronous, ZBT | 4Mbit | Parallel | 100 MHz | - | 5 ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20.1) |
|
|
|
GigaDevice Semiconductor (HK) Limited |
LINEAR IC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Gbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 2Gbit | SPI - Quad I/O, QPI, DTR | 166 MHz | - | - | 1.65V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
|
|
Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micron Technology Inc. |
LPDDR4 32G 512MX64 FBGA DDP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
0
Login/Register
BOM
Cart
