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Alliance Memory, Inc. |
IC SDRAM 128MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock4,240 |
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DRAM | SDRAM - DDR | 128Mb (8M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 55NS 81CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 256Kb (16K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 81-TFBGA
- Supplier Device Package: 81-CABGA (5x5)
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Package: 81-TFBGA |
Stock3,088 |
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SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 55ns | 55ns | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 81-TFBGA | 81-CABGA (5x5) |
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Cypress Semiconductor Corp |
IC SRAM 72MBIT 200MHZ 209FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 72Mb (1M x 72)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 209-BGA
- Supplier Device Package: 209-FBGA (14x22)
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Package: 209-BGA |
Stock6,448 |
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SRAM | SRAM - Synchronous | 72Mb (1M x 72) | Parallel | 200MHz | - | 3ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 209-BGA | 209-FBGA (14x22) |
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STMicroelectronics |
IC EEPROM 4KBIT 2MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8, 256 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock116,040 |
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EEPROM | EEPROM | 4Kb (512 x 8, 256 x 16) | SPI | 2MHz | 5ms | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock7,168 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Micron Technology Inc. |
IC RLDRAM 288MBIT 200MHZ 144UBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM
- Memory Size: 288Mb (16M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-TFBGA
- Supplier Device Package: 144-µBGA (18.5x11)
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Package: 144-TFBGA |
Stock2,100 |
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DRAM | DRAM | 288Mb (16M x 18) | Parallel | 200MHz | - | 20ns | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 144-TFBGA | 144-µBGA (18.5x11) |
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Micron Technology Inc. |
IC SDRAM 512MBIT 133MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 750ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock3,984 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 133MHz | 15ns | 750ps | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,266,080 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 400kHz | 5ms | 900ns | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Micron Technology Inc. |
IC FLASH 256GBIT 169VFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 169-VFBGA
- Supplier Device Package: 169-VFBGA (14x18)
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Package: 169-VFBGA |
Stock4,128 |
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FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | 1.65 V ~ 3.6 V | -25°C ~ 85°C (TA) | Surface Mount | 169-VFBGA | 169-VFBGA (14x18) |
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IDT, Integrated Device Technology Inc |
IC SRAM 64KBIT 20NS 84PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (4K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 84-LCC (J-Lead)
- Supplier Device Package: 84-PLCC (29.21x29.21)
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Package: 84-LCC (J-Lead) |
Stock7,456 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 84-LCC (J-Lead) | 84-PLCC (29.21x29.21) |
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Micron Technology Inc. |
IC SDRAM 256MBIT 167MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,552 |
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DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
IC FLASH 128MBIT 100NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock6,352 |
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FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Cypress Semiconductor Corp |
IC FLASH 128MBIT 104MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 5µs, 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-USON (5x6)
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Package: 8-UFDFN Exposed Pad |
Stock2,208 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI | 104MHz | 5µs, 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-USON (5x6) |
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Alliance Memory, Inc. |
IC SRAM 512KBIT 15NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock2,368 |
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SRAM | SRAM - Asynchronous | 512Kb (32K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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Alliance Memory, Inc. |
IC SRAM 1MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,536 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 10ns | 10ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8MSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
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Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock5,392 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 1MHz | 5ms | 400ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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SII Semiconductor Corporation |
EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (128 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 8ms
- Access Time: -
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,776 |
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EEPROM | EEPROM | 2Kb (128 x 16) | SPI | 2MHz | 8ms | - | 1.6 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Winbond Electronics |
IC SDRAM 1GBIT 933MHZ 96BGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,736 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC FLASH 1G SPI UPDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gb (1G x 1)
- Memory Interface: SPI
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,024 |
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FLASH | FLASH - NAND | 1Gb (1G x 1) | SPI | - | - | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
MODULE EMMC 32GB
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-LBGA (14x18)
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Package: 100-LBGA |
Stock2,048 |
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FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
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Infineon Technologies |
INFINEON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 750µs
- Access Time: 6.5 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 512Mbit | SPI - Quad I/O | 133 MHz | 750µs | 6.5 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Catalyst Semiconductor Inc. |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kbit
- Memory Interface: I2C
- Clock Frequency: 400 kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 1 µs
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 1Kbit | I2C | 400 kHz | 5ms | 1 µs | 2.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 1KBIT 1-WIRE TO92-3
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kbit
- Memory Interface: I2C, Single Wire
- Clock Frequency: 125 kbps
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: - |
Stock2,844 |
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EEPROM | EEPROM | 1Kbit | I2C, Single Wire | 125 kbps | 5ms | - | 1.7V ~ 3.6V | -40°C ~ 85°C (TC) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4GBIT HSUL 12 168VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4
- Memory Size: 4Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 168-VFBGA
- Supplier Device Package: 168-VFBGA (12x12)
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Package: - |
Request a Quote |
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DRAM | SDRAM - Mobile LPDDR2-S4 | 4Gbit | HSUL_12 | 400 MHz | 15ns | 5.5 ns | 1.14V ~ 1.3V, 1.7V ~ 1.95V | 0°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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Etron Technology, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x13)
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Package: - |
Stock6,000 |
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DRAM | SDRAM - DDR3L | 1Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13) |
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Macronix |
IC FLASH 32MBIT SPI QUAD 12WLCSP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 33 MHz
- Write Cycle Time - Word, Page: 100µs, 3.6ms
- Access Time: 6 ns
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 12-XFBGA, WLCSP
- Supplier Device Package: 12-WLCSP
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR | 32Mbit | SPI - Quad I/O | 33 MHz | 100µs, 3.6ms | 6 ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 12-XFBGA, WLCSP | 12-WLCSP |
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Winbond Electronics |
IC FLASH 1GBIT SPI/QUAD 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 700µs
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (8x6)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 1Gbit | SPI - Quad I/O, QPI, DTR | 166 MHz | 700µs | 6 ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (8x6) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: - |
Request a Quote |
|
DRAM | SDRAM | 256Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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