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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 512MBIT 133MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-LFBGA
- Supplier Device Package: 90-WBGA (8x13)
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Package: 90-LFBGA |
Stock6,368 |
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DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.4ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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Cypress Semiconductor Corp |
IC FLASH 8MBIT 76MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 76MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,904 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI | 76MHz | 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 15NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,320 |
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SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC EEPROM 64KBIT 20MHZ 8MAP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-MAP (3x4.9)
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Package: 8-UDFN Exposed Pad |
Stock4,000 |
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EEPROM | EEPROM | 64Kb (8K x 8) | SPI | 20MHz | 5ms | - | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-MAP (3x4.9) |
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Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8, 64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock3,696 |
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EEPROM | EEPROM | 1Kb (128 x 8, 64 x 16) | SPI | 2MHz | 10ms | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 333MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock5,856 |
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SRAM | SRAM - Synchronous, DDR II | 18Mb (1M x 18) | Parallel | 333MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Micron Technology Inc. |
IC FLASH 128GBIT 169WFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 169-WFBGA
- Supplier Device Package: 169-WFBGA (14x18)
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Package: 169-WFBGA |
Stock5,408 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 169-WFBGA | 169-WFBGA (14x18) |
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Alliance Memory, Inc. |
IC SRAM 32MBIT 55NS 48TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 32Mb (2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock2,352 |
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SRAM | SRAM - Asynchronous | 32Mb (2M x 16) | Parallel | - | 55ns | 55ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Micron Technology Inc. |
IC SDRAM 512MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock7,696 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Cypress Semiconductor Corp |
IC FLASH 512MBIT 100NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (9x9)
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Package: 64-LBGA |
Stock5,072 |
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FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (9x9) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x13)
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Package: 60-TFBGA |
Stock3,072 |
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DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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Microchip Technology |
IC EEPROM 16KBIT 100KHZ TO92-3
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Single Wire
- Clock Frequency: 100kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock15,972 |
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EEPROM | EEPROM | 16Kb (2K x 8) | Single Wire | 100kHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Cypress Semiconductor Corp |
IC SRAM 4.5MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock31,848 |
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SRAM | SRAM - Synchronous | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Rohm Semiconductor |
IC EEPROM 64KBIT 400KHZ VCSP50L1
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-UFBGA, CSPBGA
- Supplier Device Package: VCSP50L1
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Package: 6-UFBGA, CSPBGA |
Stock430,200 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 6-UFBGA, CSPBGA | VCSP50L1 |
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Cypress Semiconductor Corp |
IC FLASH 512MBIT 100NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (13x11)
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Package: 64-LBGA |
Stock39,696 |
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FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Cypress Semiconductor Corp |
IC FLASH 512M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (9x9)
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Package: 64-LBGA |
Stock3,328 |
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FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | 0°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Micron Technology Inc. |
IC FLASH 128G MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 128Gb (16G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,952 |
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FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | - | - | - |
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Micron Technology Inc. |
IC FLASH 1G SPI 133MHZ 8WPDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WPDFN (6x8) (MLP8)
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Package: 8-WDFN Exposed Pad |
Stock4,288 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WPDFN (6x8) (MLP8) |
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Micron Technology Inc. |
IC FLASH 512M SPI 24TPBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-T-PBGA (6x8)
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Package: 24-TBGA |
Stock6,784 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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Infineon Technologies |
IC FLASH 1GBIT SPI/QUAD 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (8x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 1Gbit | SPI - Quad I/O, QPI | 166 MHz | - | - | 1.7V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (8x8) |
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Renesas Electronics Corporation |
IC FLASH 8MBIT SPI/QUAD WAFER
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 22µs, 6.5ms
- Access Time: -
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Wafer
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 8Mbit | SPI - Quad I/O | 133 MHz | 22µs, 6.5ms | - | 1.65V ~ 3.6V | -40°C ~ 85°C (TC) | Surface Mount | Die | Wafer |
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Winbond Electronics |
IC DRAM 1GBIT PAR 96VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gbit
- Memory Interface: Parallel
- Clock Frequency: 667 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-VFBGA
- Supplier Device Package: 96-VFBGA (7.5x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3L | 1Gbit | Parallel | 667 MHz | 15ns | 20 ns | 1.283V ~ 1.45V, 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-VFBGA | 96-VFBGA (7.5x13) |
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Fujitsu Semiconductor Memory Solution |
IC FRAM 8MBIT SPI/QUAD 16SOP
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOP
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Package: - |
Request a Quote |
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FRAM | FRAM (Ferroelectric RAM) | 8Mbit | SPI - Quad I/O, QPI | 108 MHz | - | 7 ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT PARALLEL 32TSOP II
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package: 32-TSOP II
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 70ns | 70 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.400", 10.16mm Width) | 32-TSOP II |
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Micron Technology Inc. |
UFS 1T
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
IC EEPROM 16KBIT I2C 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kbit
- Memory Interface: I2C
- Clock Frequency: 400 kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900 ns
- Voltage - Supply: 1.8V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: - |
Request a Quote |
|
EEPROM | EEPROM | 16Kbit | I2C | 400 kHz | 5ms | 900 ns | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Micron Technology Inc. |
LPDDR5 64GBIT 32 315/315 TFBGA 4
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR5
- Memory Size: 64Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.05V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR5 | 64Gbit | Parallel | - | - | - | 1.05V | - | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
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Silicon Motion, Inc. |
IC FLASH 80GBIT EMMC 100BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 80Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-BGA (14x18)
|
Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 80Gbit | eMMC | - | - | - | - | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |