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ISSI, Integrated Silicon Solution Inc |
IC SRAM 36MBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x20)
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Package: 100-LQFP |
Stock7,488 |
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SRAM | SRAM - Synchronous | 36Mb (1M x 36) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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Micron Technology Inc. |
IC FLASH 128MBIT 70NS 64FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8, 8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (11x13)
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Package: 64-LBGA |
Stock4,336 |
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FLASH | FLASH - NOR | 128Mb (16M x 8, 8M x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
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Microchip Technology |
IC SRAM 512KBIT 20MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 512Kb (64K x 8)
- Memory Interface: SPI - Dual I/O
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock5,040 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 512Kb (64K x 8) | SPI - Dual I/O | 20MHz | - | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 4KBIT 20MHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock7,056 |
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EEPROM | EEPROM | 4Kb (512 x 8) | SPI | 20MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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ON Semiconductor |
IC EEPROM 64KBIT 120NS 28TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 5ms
- Access Time: 120ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock4,992 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 5ms | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
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Micron Technology Inc. |
IC FLASH 64MBIT 70NS 64TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-VFBGA
- Supplier Device Package: 64-TFBGA (10.5x6.39)
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Package: 64-VFBGA |
Stock7,984 |
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FLASH | FLASH - NOR | 64Mb (4M x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-VFBGA | 64-TFBGA (10.5x6.39) |
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IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 167MHZ 165CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - DDR2
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.4ns
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-CABGA (13x15)
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Package: 165-TBGA |
Stock6,848 |
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SRAM | SRAM - DDR2 | 18Mb (1M x 18) | Parallel | 167MHz | - | 8.4ns | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock4,304 |
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DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 333MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 333MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock2,256 |
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SRAM | SRAM - Synchronous, DDR II | 36Mb (1M x 36) | Parallel | 333MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 117MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock5,248 |
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SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT 15NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 256Kb (16K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock4,368 |
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SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Microchip Technology |
IC OTP 1MBIT 70NS 32DIP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Through Hole
- Package / Case: 32-DIP (0.600", 15.24mm)
- Supplier Device Package: 32-DIP
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Package: 32-DIP (0.600", 15.24mm) |
Stock2,544 |
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EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 70ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 32-DIP (0.600", 15.24mm) | 32-DIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 15NS 68PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (16K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: 68-LCC (J-Lead) |
Stock5,920 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 35NS 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (4K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
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Package: 64-LQFP |
Stock4,688 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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Cypress Semiconductor Corp |
ASYNC SRAMS
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,312 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 2MBIT 55NS 48BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-miniBGA (6x8)
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Package: 48-TFBGA |
Stock4,816 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 55ns | 55ns | 2.5 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (6x8) |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 8NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 8ns
- Access Time: 8ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock23,412 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 8ns | 8ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
IC FLASH 256M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (9x9)
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Package: 64-LBGA |
Stock6,640 |
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FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Macronix |
IC FLASH 512KBIT
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,048 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 50TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: DRAM - EDO
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 85ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 50-TSOP (0.400", 10.16mm Width), 44 Leads
- Supplier Device Package: 50/44-TSOP II
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Package: 50-TSOP (0.400", 10.16mm Width), 44 Leads |
Stock2,496 |
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DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | 85ns | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 50-TSOP (0.400", 10.16mm Width), 44 Leads | 50/44-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 8K PARALLEL 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock6,960 |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Micron Technology Inc. |
IC DRAM 64G 1600MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 64Gb (1G x 64)
- Memory Interface: -
- Clock Frequency: 1600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,000 |
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DRAM | SDRAM - Mobile LPDDR4 | 64Gb (1G x 64) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 64MBIT SPI/QUAD 8SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 120µs, 4ms
- Access Time: 12 ns
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 64Mbit | SPI - Quad I/O | 104 MHz | 120µs, 4ms | 12 ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
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Insignis Technology Corporation |
IC DRAM 2GBIT PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x13)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR3L | 2Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13) |
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Texas Instruments |
IC EPROM 16KBIT PARALLEL 24DIP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - UV
- Memory Size: 16Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 35 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 24-DIP (0.600", 15.24mm) Window
- Supplier Device Package: 24-DIP
|
Package: - |
Request a Quote |
|
EPROM | EPROM - UV | 16Kbit | Parallel | - | - | 35 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 24-DIP (0.600", 15.24mm) Window | 24-DIP |
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Winbond Electronics |
IC DRAM 2GBIT LVSTL 11 200WFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gbit
- Memory Interface: LVSTL_11
- Clock Frequency: 1.866 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4X | 2Gbit | LVSTL_11 | 1.866 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
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Micron Technology Inc. |
DDR4 1GX16 Z42B
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
70V24L17PFGI
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |