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Adesto Technologies |
IC FLASH 512KBIT 85MHZ 8UDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 512Kb (64K x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 8µs, 3.5ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock7,088 |
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FLASH | FLASH | 512Kb (64K x 8) | SPI | 104MHz | 8µs, 3.5ms | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,000 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 12ns | 12ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 200MHZ 256FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 18Mb (256K x 72)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3ns
- Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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Package: 256-LBGA |
Stock3,728 |
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SRAM | SRAM - Dual Port, Synchronous | 18Mb (256K x 72) | Parallel | 200MHz | - | 3.3ns | 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-FBGA (17x17) |
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Cypress Semiconductor Corp |
IC SRAM 512KBIT 20NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock3,616 |
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SRAM | SRAM - Dual Port, Asynchronous | 512Kb (32K x 16) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Microchip Technology |
IC EEPROM 32KBIT 400KHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,576 |
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EEPROM | EEPROM | 32Kb (4K x 8) | I2C | 400kHz | 10ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 133MHZ 208QFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-BFQFP
- Supplier Device Package: 208-PQFP (28x28)
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Package: 208-BFQFP |
Stock3,744 |
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SRAM | SRAM - Dual Port, Synchronous | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | -40°C ~ 85°C (TA) | Surface Mount | 208-BFQFP | 208-PQFP (28x28) |
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Micron Technology Inc. |
IC FLASH 256GBIT 100MHZ 132VBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 256Gb (32G x 8)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,280 |
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FLASH | FLASH - NAND | 256Gb (32G x 8) | Parallel | 100MHz | - | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 25NS 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
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Package: 64-LQFP |
Stock3,568 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 2MBIT 8.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 2Mb (64K x 36)
- Memory Interface: Parallel
- Clock Frequency: 90MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock2,992 |
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SRAM | SRAM - Synchronous | 2Mb (64K x 36) | Parallel | 90MHz | - | 8.5ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Micron Technology Inc. |
IC SDRAM 512MBIT 200MHZ 60FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (8x12.5)
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Package: 60-TFBGA |
Stock2,480 |
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DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 133MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.5ns
- Voltage - Supply: 2.3 V ~ 3 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock5,296 |
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DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.5ns | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Micron Technology Inc. |
IC SDRAM 128MBIT 166MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (16M x 8)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,680 |
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DRAM | SDRAM | 128Mb (16M x 8) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,840 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 10NS 32SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.15 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 32-SOJ
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Package: 32-BSOJ (0.400", 10.16mm Width) |
Stock6,480 |
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SRAM | SRAM - Asynchronous | 1Mb (128K x 8) | Parallel | - | 10ns | 10ns | 3.15 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 32-BSOJ (0.400", 10.16mm Width) | 32-SOJ |
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Microchip Technology |
IC EEPROM 256KBIT 400KHZ 8SOIJ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIJ
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock4,896 |
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EEPROM | EEPROM | 256Kb (32K x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Microchip Technology |
IC EEPROM 8KBIT 1MHZ 8VFBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (1K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 4.5µs
- Voltage - Supply: 1.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-VFBGA
- Supplier Device Package: 8-VFBGA (1.5x2)
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Package: 8-VFBGA |
Stock3,744 |
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EEPROM | EEPROM | 8Kb (1K x 8) | I2C | 1MHz | 5ms | 4.5µs | 1.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 8-VFBGA | 8-VFBGA (1.5x2) |
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Microchip Technology |
IC EEPROM 64KBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,228 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Microchip Technology |
IC EEPROM 4KBIT 2MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (256 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock14,664 |
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EEPROM | EEPROM | 4Kb (256 x 16) | SPI | 2MHz | 6ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Cypress Semiconductor Corp |
IC NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: 24-TBGA |
Stock5,936 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-BGA (8x6) |
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Micron Technology Inc. |
IC FLASH 256MBIT SPI 24TPBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 1.8ms
- Access Time: 5 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-T-PBGA (6x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 256Mbit | SPI - Quad I/O | 133 MHz | 1.8ms | 5 ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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Infineon Technologies |
IC PSRAM 256MBIT HYPERBUS 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 256Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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PSRAM | PSRAM (Pseudo SRAM) | 256Mbit | HyperBus | 200 MHz | 35ns | 35 ns | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Micron Technology Inc. |
UMCP1.063TB
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 2MBIT PARALLEL 256FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Standard
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.7 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Standard | 2Mbit | Parallel | 133 MHz | - | 4.7 ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-FBGA (17x17) |
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Micron Technology Inc. |
IC FLASH 32GBIT PARALLEL DIE
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (MLC)
- Memory Size: 32Gbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (MLC) | 32Gbit | Parallel | - | 20ns | 20 ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
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Samsung |
SRAM ASYNC SLOW 4MB 512Kx8 5V 32
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: -
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: 32-TSOP REVERSE
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Package: - |
Request a Quote |
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SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 55ns | - | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | - | 32-TSOP REVERSE |
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Infineon Technologies |
IC MCD AUTO ANALOG
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
IC SRAM
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 17ns
- Access Time: 17 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 48-DIP (0.600", 15.24mm)
- Supplier Device Package: 48-PDIP
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kbit | Parallel | - | 17ns | 17 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 48-DIP (0.600", 15.24mm) | 48-PDIP |
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GigaDevice Semiconductor (HK) Limited |
LINEAR IC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 2Gbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 600µs
- Access Time: 9 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x8)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 2Gbit | SPI - Quad I/O, QPI, DTR | 104 MHz | 600µs | 9 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |