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Cypress Semiconductor Corp |
IC SRAM 18MBIT 167MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock6,016 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 167MHz | - | 3.4ns | 2.375 V ~ 2.625 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 250MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock4,928 |
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SRAM | SRAM - Synchronous, QDR II | 18Mb (1M x 18) | Parallel | 250MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 12NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock5,696 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 12ns | 12ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 250MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: 2.6ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TFBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TFBGA |
Stock6,752 |
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SRAM | SRAM - Synchronous | 18Mb (1M x 18) | Parallel | 250MHz | - | 2.6ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TFBGA | 165-TFBGA (13x15) |
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Cypress Semiconductor Corp |
IC SRAM 256KBIT 12NS 28SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-BSOJ (0.300", 7.62mm Width)
- Supplier Device Package: 28-SOJ
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Package: 28-BSOJ (0.300", 7.62mm Width) |
Stock4,688 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
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Microchip Technology |
IC EEPROM 64KBIT 90NS 28SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Package: 28-SOIC (0.295", 7.50mm Width) |
Stock4,320 |
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EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 90ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 10NS 256CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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Package: 256-LBGA |
Stock2,016 |
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SRAM | SRAM - Dual Port, Asynchronous | 4.5Mb (256K x 18) | Parallel | - | 10ns | 10ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 133MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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Package: 100-LQFP |
Stock2,304 |
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SRAM | SRAM - Synchronous | 36Mb (1M x 36) | Parallel | 133MHz | - | 6.5ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Micron Technology Inc. |
IC SDRAM 16GBIT 1.6GHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 16Gb (256M x 64)
- Memory Interface: -
- Clock Frequency: 1600MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,256 |
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DRAM | SDRAM - Mobile LPDDR4 | 16Gb (256M x 64) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 25NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock3,360 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 60ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,848 |
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FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | - | 60ns | 60ns | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC FLASH 1GBIT 100NS 64FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8, 64M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (11x13)
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Package: 64-LBGA |
Stock4,208 |
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FLASH | FLASH - NOR | 1Gb (128M x 8, 64M x 16) | Parallel | - | 100ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
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Micron Technology Inc. |
IC SDRAM 512MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700ps
- Voltage - Supply: 2.5 V ~ 2.7 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock6,016 |
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DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5 V ~ 2.7 V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Cypress Semiconductor Corp |
IC MEMORY F-RAM SER 8SOIC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,360 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 45NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,960 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Micron Technology Inc. |
IC FLASH SER NOR SLC 32MX4 WPDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WPDFN (6x8) (MLP8)
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Package: 8-WDFN Exposed Pad |
Stock3,584 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WPDFN (6x8) (MLP8) |
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Cypress Semiconductor Corp |
IC FLASH 64MBIT 90NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (8M x 8, 4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 90ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-Fortified BGA (13x11)
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Package: 64-LBGA |
Stock6,224 |
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FLASH | FLASH - NOR | 64Mb (8M x 8, 4M x 16) | Parallel | - | 90ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
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Winbond Electronics |
IC SDRAM 64MBIT 200MHZ 66TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 55ns
- Voltage - Supply: 2.3 V ~ 2.7 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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Package: 66-TSSOP (0.400", 10.16mm Width) |
Stock7,936 |
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DRAM | SDRAM - DDR | 64Mb (4M x 16) | Parallel | 200MHz | 15ns | 55ns | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 16Mb (2M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 2.4 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock92,100 |
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SRAM | SRAM - Asynchronous | 16Mb (2M x 8) | Parallel | - | 10ns | 10ns | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
1.6-5.5V, 1MHZ, IND TMP, 8-UDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: I²C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450ns
- Voltage - Supply: 1.6 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFDFN Exposed Pad
- Supplier Device Package: 8-UDFN (2x3)
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Package: 8-UFDFN Exposed Pad |
Stock28,356 |
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EEPROM | EEPROM | 32Kb (4K x 8) | I²C | 1MHz | 5ms | 450ns | 1.6 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
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ON Semiconductor |
IC EEPROM 256 SPI 250KHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256b (16 x 16)
- Memory Interface: SPI
- Clock Frequency: 250kHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,288 |
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EEPROM | EEPROM | 256b (16 x 16) | SPI | 250kHz | 15ms | - | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Cypress Semiconductor Corp |
IC FLASH 128M PARALLEL 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock2,672 |
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FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | - | 60ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Silicon Motion, Inc. |
IC FLASH 640GBIT EMMC 153BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 640Gbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 153-TFBGA
- Supplier Device Package: 153-BGA (11.5x13)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (SLC) | 640Gbit | eMMC | - | - | - | - | -40°C ~ 85°C | Surface Mount | 153-TFBGA | 153-BGA (11.5x13) |
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Micron Technology Inc. |
128GX8 NAND FLASH DIE-COM 2.5V M
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
IC EEPROM 1KBIT MICROWIRE 1MHZ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kbit
- Memory Interface: Microwire
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: -
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 1Kbit | Microwire | 1 MHz | 2ms | - | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | - | - | - |
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Texas Instruments |
IC NVSRAM 64KBIT 70NS 28DIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 64Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.61", 15.49mm)
- Supplier Device Package: 28-DIP Module (18.42x37.72)
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Package: - |
Request a Quote |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kbit | Parallel | - | 70ns | 70 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Through Hole | 28-DIP Module (0.61", 15.49mm) | 28-DIP Module (18.42x37.72) |
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Cypress Semiconductor Corp |
CY7C1010CV33 - STANDARD SRAM, 25
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Atmel |
IC EEPROM 1KBIT I2C 1MHZ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kbit
- Memory Interface: I2C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 550 ns
- Voltage - Supply: 1.8V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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EEPROM | EEPROM | 1Kbit | I2C | 1 MHz | 5ms | 550 ns | 1.8V ~ 5.5V | -40°C ~ 85°C (TA) | - | - | - |
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