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ISSI, Integrated Silicon Solution Inc |
IC FLASH 256KBIT 100MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,336 |
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FLASH | FLASH | 256Kb (32K x 8) | SPI | 100MHz | 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC EEPROM 32KBIT 5MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock33,696 |
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EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 5MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 15NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock14,472 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock2,992 |
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DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 18MBIT 250MHZ 165BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 250MHz
- Write Cycle Time - Word, Page: -
- Access Time: 2.6ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-TFBGA (13x15)
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Package: 165-TBGA |
Stock5,904 |
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SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 250MHz | - | 2.6ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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Micron Technology Inc. |
IC SDRAM 128MBIT 133MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (16M x 8)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock4,176 |
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DRAM | SDRAM | 128Mb (16M x 8) | Parallel | 133MHz | 15ns | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Microchip Technology |
IC FLASH 1MBIT 55NS 32VSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 50µs
- Access Time: 55ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-TFSOP (0.488", 12.40mm Width)
- Supplier Device Package: 32-VSOP
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Package: 32-TFSOP (0.488", 12.40mm Width) |
Stock7,872 |
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FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 50µs | 55ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 32-TFSOP (0.488", 12.40mm Width) | 32-VSOP |
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Microchip Technology |
IC EEPROM 16KBIT 400KHZ 8MAP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 4.5µs
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: 8-MAP (3x4.9)
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Package: 8-UDFN Exposed Pad |
Stock4,560 |
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EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 5ms | 4.5µs | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-MAP (3x4.9) |
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Microchip Technology |
IC EEPROM 16KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock39,360 |
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EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC OTP 4MBIT 120NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,768 |
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EPROM | EPROM - OTP | 4Mb (512K x 8) | Parallel | - | - | 120ns | 3 V ~ 3.6 V, 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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IDT, Integrated Device Technology Inc |
IC SRAM 1.125MBIT 5NS 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1.125Mb (64K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 5ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock5,472 |
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SRAM | SRAM - Dual Port, Synchronous | 1.125Mb (64K x 18) | Parallel | - | - | 5ns | 3.15 V ~ 3.45 V | -40°C ~ 85°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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IDT, Integrated Device Technology Inc |
IC SRAM 1.125MBIT 10NS 208CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 1.125Mb (32K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
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Package: 208-LFBGA |
Stock5,984 |
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SRAM | SRAM - Dual Port, Asynchronous | 1.125Mb (32K x 36) | Parallel | - | 10ns | 10ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
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IDT, Integrated Device Technology Inc |
IC SRAM 18MBIT 166MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5ns
- Voltage - Supply: 2.375 V ~ 2.625 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,760 |
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SRAM | SRAM - Synchronous ZBT | 18Mb (1M x 18) | Parallel | 166MHz | - | 3.5ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 72KBIT 15NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 72Kb (4K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock3,760 |
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SRAM | SRAM - Dual Port, Asynchronous | 72Kb (4K x 18) | Parallel | - | 15ns | 15ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Macronix |
IC FLASH 512MBIT 110NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock6,320 |
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FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 110ns | 110ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Micron Technology Inc. |
IC SDRAM 64MBIT 167MHZ 86TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (2M x 32)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 86-TFSOP (0.400", 10.16mm Width)
- Supplier Device Package: 86-TSOP II
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Package: 86-TFSOP (0.400", 10.16mm Width) |
Stock6,272 |
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DRAM | SDRAM | 64Mb (2M x 32) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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Microchip Technology |
IC EEPROM 128KBIT 10MHZ 8SOIJ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIJ
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock6,560 |
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EEPROM | EEPROM | 128Kb (16K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Winbond Electronics |
IC FLASH 32MBIT 133MHZ 24TFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TFBGA (6x8)
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Package: 24-TBGA |
Stock2,592 |
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FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI | 133MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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Adesto Technologies |
IC EEPROM 256KBIT 10MHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256kb (64B Page Size)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 100µs, 5ms
- Access Time: -
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock22,464 |
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EEPROM | EEPROM | 256kb (64B Page Size) | SPI | 10MHz | 100µs, 5ms | - | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Alliance Memory, Inc. |
IC SDRAM 4GBIT 800MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (13x9)
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Package: 96-TFBGA |
Stock17,160 |
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DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (13x9) |
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STMicroelectronics |
IC NVSRAM 64KBIT 100NS 28DIP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP Module (0.600", 15.24mm)
- Supplier Device Package: 28-PCDIP, CAPHAT?
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Package: 28-DIP Module (0.600", 15.24mm) |
Stock6,016 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 100ns | 100ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-PCDIP, CAPHAT? |
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Micron Technology Inc. |
IC DRAM 16G 2133MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 16Gb (512M x 32)
- Memory Interface: -
- Clock Frequency: 2133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,816 |
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DRAM | SDRAM - Mobile LPDDR4 | 16Gb (512M x 32) | - | 2133MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
IC 128 MB FLASH MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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Package: 24-TBGA |
Stock2,672 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-BGA (8x6) |
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ISSI, Integrated Silicon Solution Inc |
16G, 1.35V, DDR3L, 1Gx16,1600MT/
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 16Gbit
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-LWBGA (10x14)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3L | 16Gbit | Parallel | 800 MHz | 15ns | 20 ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LWBGA (10x14) |
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Micron Technology Inc. |
IC DRAM
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 48Gbit
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 556-TFBGA
- Supplier Device Package: 556-WFBGA (12.4x12.4)
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Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4 | 48Gbit | Parallel | 2.133 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Surface Mount | 556-TFBGA | 556-WFBGA (12.4x12.4) |
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Rohm Semiconductor |
IC EEPROM 64KBIT I2C UCSP35L1
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kbit
- Memory Interface: I2C
- Clock Frequency: 400 kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.6V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, CSPBGA
- Supplier Device Package: UCSP35L1
|
Package: - |
Stock7,848 |
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EEPROM | EEPROM | 64Kbit | I2C | 400 kHz | 5ms | - | 1.6V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 6-XFBGA, CSPBGA | UCSP35L1 |
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Infineon Technologies |
IC FLASH 512MBIT HYPERBUS 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 6.5 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 512Mbit | HyperBus | 166 MHz | 1.7ms | 6.5 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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Micron Technology Inc. |
IC SRAM 18MBIT PAR 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mbit
- Memory Interface: Parallel
- Clock Frequency: 167 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-FBGA (13x15)
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Synchronous | 18Mbit | Parallel | 167 MHz | - | - | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-FBGA (13x15) |