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ON Semiconductor |
IC EEPROM 256KBIT 150NS 28DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 5ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-PDIP
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Package: 28-DIP (0.600", 15.24mm) |
Stock7,424 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 5ms | 150ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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Cypress Semiconductor Corp |
IC SRAM 36MBIT 375MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 36Mb (1M x 36)
- Memory Interface: Parallel
- Clock Frequency: 375MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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Package: 165-LBGA |
Stock4,800 |
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SRAM | SRAM - Synchronous, DDR II | 36Mb (1M x 36) | Parallel | 375MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
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Cypress Semiconductor Corp |
IC SRAM 64KBIT 40NS 100VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, MoBL
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 40ns
- Access Time: 40ns
- Voltage - Supply: 1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-VFBGA
- Supplier Device Package: 100-VFBGA (6x6)
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Package: 100-VFBGA |
Stock2,592 |
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SRAM | SRAM - Dual Port, MoBL | 64Kb (8K x 8) | Parallel | - | 40ns | 40ns | 1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-VFBGA | 100-VFBGA (6x6) |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 64MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: 54-TSOP (0.400", 10.16mm Width) |
Stock336,636 |
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DRAM | SDRAM | 64Mb (4M x 16) | Parallel | 143MHz | - | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 64KBIT 55NS 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
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Package: 64-LQFP |
Stock5,264 |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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Cypress Semiconductor Corp |
IC SRAM 1.152MBIT 20NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 1.152Mb (64K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock5,872 |
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SRAM | SRAM - Dual Port, Asynchronous | 1.152Mb (64K x 18) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Microchip Technology |
IC EEPROM 1KBIT 20MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,464 |
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EEPROM | EEPROM | 1Kb (128 x 8) | SPI | 20MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC SRAM 4MBIT 12NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,680 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 55NS 68PGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (2K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 68-BPGA
- Supplier Device Package: 68-PGA (29.46x29.46)
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Package: 68-BPGA |
Stock4,160 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (2K x 16) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 68-BPGA | 68-PGA (29.46x29.46) |
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IDT, Integrated Device Technology Inc |
IC SRAM 512KBIT 7.5NS 128TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
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Package: 128-LQFP |
Stock5,904 |
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SRAM | SRAM - Dual Port, Synchronous | 512Kb (32K x 16) | Parallel | - | - | 7.5ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 128-LQFP | 128-TQFP (14x20) |
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Micron Technology Inc. |
IC FLASH 512MBIT 100NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8, 32M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (11x13)
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Package: 64-LBGA |
Stock2,976 |
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FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 100ns | 100ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
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Winbond Electronics |
IC SDRAM 128MBIT 200MHZ 90TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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Package: 90-TFBGA |
Stock6,240 |
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DRAM | SDRAM - Mobile LPDDR | 128Mb (4M x 32) | Parallel | 200MHz | 15ns | 5ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-VFBGA (8x13) |
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Alliance Memory, Inc. |
IC SRAM 256KBIT 20NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
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Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock4,176 |
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SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
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Microchip Technology |
IC EEPROM 8KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 8Kb (256 x 8 x 4)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock22,284 |
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EEPROM | EEPROM | 8Kb (256 x 8 x 4) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Maxim Integrated |
IC OTP 1KBIT 1WIRE TO92-3
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Kb (1K x 1)
- Memory Interface: 1-Wire?
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 15µs
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock48,000 |
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EPROM | EPROM - OTP | 1Kb (1K x 1) | 1-Wire? | - | - | 15µs | - | -40°C ~ 85°C (TA) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
IC EEPROM 2KBIT 400KHZ 8TSSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock259,584 |
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EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microchip Technology |
IC EEPROM 1MBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mb (128K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock26,508 |
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EEPROM | EEPROM | 1Mb (128K x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 32M SPI 133MHZ WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 32Mb (4M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 800µs
- Access Time: -
- Voltage - Supply: 1.65 V ~ 1.95 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
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Package: 8-WDFN Exposed Pad |
Stock6,208 |
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FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 800µs | - | 1.65 V ~ 1.95 V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
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Micron Technology Inc. |
IC DRAM 32G 1866MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 1866MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,464 |
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DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Macronix |
IC FLASH 8MBIT
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8)
- Memory Interface: SPI
- Clock Frequency: 86MHz
- Write Cycle Time - Word, Page: 50µs, 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock7,216 |
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FLASH | FLASH - NOR | 8Mb (1M x 8) | SPI | 86MHz | 50µs, 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 8K PARALLEL 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock2,400 |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Infineon Technologies |
IC FLASH 1GBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR | 1Gbit | SPI - Quad I/O | 133 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Renesas Electronics Corporation |
QDR SRAM, 4MX8, 0.45NS
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 64MBIT PARALLEL 54TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 64Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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Package: - |
Request a Quote |
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DRAM | SDRAM | 64Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 512MBIT SPI/QUAD 16SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOP
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Package: - |
Request a Quote |
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FLASH | FLASH - NOR (SLC) | 512Mbit | SPI - Quad I/O, QPI, DTR | 200 MHz | - | - | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
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Infineon Technologies |
ASYNC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
IC RAM DUAL PORT
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-LCC (J-Lead)
- Supplier Device Package: 68-PLCC (24.21x24.21)
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Package: - |
Request a Quote |
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SRAM | SRAM - Dual Port, Asynchronous | 64Kbit | Parallel | - | 12ns | 12 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
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Micron Technology Inc. |
IC SRAM 2MBIT PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Standard
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: 66 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 10 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20.1)
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Package: - |
Request a Quote |
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SRAM | SRAM - Standard | 2Mbit | Parallel | 66 MHz | - | 10 ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20.1) |