|
|
Micron Technology Inc. |
IC FLASH 128MBIT 70NS 64TBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 52MHz
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-TBGA
- Supplier Device Package: 64-TBGA (10x13)
|
Package: 64-TBGA |
Stock5,856 |
|
FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | 52MHz | 70ns | 70ns | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 64-TBGA | 64-TBGA (10x13) |
|
|
Micron Technology Inc. |
IC SDRAM 16GBIT 533MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 16Gb (256M x 64)
- Memory Interface: Parallel
- Clock Frequency: 533MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.3 V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 220-VFBGA
- Supplier Device Package: 220-FBGA (14x14)
|
Package: 220-VFBGA |
Stock6,080 |
|
DRAM | SDRAM - Mobile LPDDR2 | 16Gb (256M x 64) | Parallel | 533MHz | - | - | 1.14 V ~ 1.3 V | -30°C ~ 85°C (TC) | Surface Mount | 220-VFBGA | 220-FBGA (14x14) |
|
|
Microchip Technology |
IC FLASH 8MBIT 70NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20µs
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
|
Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock7,856 |
|
FLASH | FLASH | 8Mb (512K x 16) | Parallel | - | 20µs | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
|
|
Cypress Semiconductor Corp |
IC SRAM 72MBIT 300MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 72Mb (2M x 36)
- Memory Interface: Parallel
- Clock Frequency: 300MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
|
Package: 165-LBGA |
Stock6,032 |
|
SRAM | SRAM - Synchronous, QDR II | 72Mb (2M x 36) | Parallel | 300MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (15x17) |
|
|
Micron Technology Inc. |
IC FLASH 64MBIT 85NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: 40MHz
- Write Cycle Time - Word, Page: 85ns
- Access Time: 85ns
- Voltage - Supply: 2.3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP (14x20)
|
Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock173,136 |
|
FLASH | FLASH - NOR | 64Mb (4M x 16) | Parallel | 40MHz | 85ns | 85ns | 2.3 V ~ 3.6 V | -40°C ~ 85°C (TC) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP (14x20) |
|
|
Cypress Semiconductor Corp |
IC SRAM 72MBIT 167MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 72Mb (4M x 18)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.4ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
|
Package: 100-LQFP |
Stock2,176 |
|
SRAM | SRAM - Synchronous | 72Mb (4M x 18) | Parallel | 167MHz | - | 3.4ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
Microchip Technology |
IC EEPROM 4KBIT 2MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8, 256 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock4,048 |
|
EEPROM | EEPROM | 4Kb (512 x 8, 256 x 16) | SPI | 2MHz | 10ms | - | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Micron Technology Inc. |
IC FLASH 512GBIT 100MHZ 100LBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 512Gb (64G x 8)
- Memory Interface: Parallel
- Clock Frequency: 100MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LBGA
- Supplier Device Package: 100-LBGA (12x18)
|
Package: 100-LBGA |
Stock7,904 |
|
FLASH | FLASH - NAND | 512Gb (64G x 8) | Parallel | 100MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (12x18) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 9NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 9ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
Package: 100-LQFP |
Stock7,984 |
|
SRAM | SRAM - Dual Port, Synchronous | 1Mb (128K x 8) | Parallel | - | - | 9ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 1GBIT 166MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10)
|
Package: 60-TFBGA |
Stock6,576 |
|
DRAM | SDRAM - Mobile DDR | 1Gb (64M x 16) | Parallel | 166MHz | 15ns | 5ns | 1.7 V ~ 1.95 V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10) |
|
|
Cypress Semiconductor Corp |
IC SRAM 18MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
|
Package: 100-LQFP |
Stock4,880 |
|
SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 133MHz | - | 6.5ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
Microchip Technology |
IC EEPROM 2KBIT 400KHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
|
Package: 8-WFDFN Exposed Pad |
Stock4,736 |
|
EEPROM | EEPROM | 2Kb (256 x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
|
|
ON Semiconductor |
IC EEPROM 16KBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock576,456 |
|
EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Alliance Memory, Inc. |
IC DRAM 4G PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (13.5x9)
|
Package: 96-TFBGA |
Stock3,024 |
|
DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (13.5x9) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 32M PARALLEL 133MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 32Mb (1M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
|
Package: 90-TFBGA |
Stock6,416 |
|
DRAM | SDRAM - Mobile | 32Mb (1M x 32) | Parallel | 133MHz | - | 6ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
Cypress Semiconductor Corp |
IC FLASH 128M SPI 108MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.209", 5.30mm Width) |
Stock5,184 |
|
FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 108MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
|
|
Renesas Electronics America |
IC SRAM 4M FAST 44-SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
|
Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock6,928 |
|
SRAM | SRAM | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
|
|
Micron Technology Inc. |
SPECIAL/CUSTOM LPDDR3
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,904 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 134FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.95 V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-FBGA (10x11.5)
|
Package: 134-VFBGA |
Stock7,840 |
|
DRAM | SDRAM - Mobile LPDDR2 | 1Gb (32M x 32) | Parallel | 400MHz | 15ns | - | 1.14 V ~ 1.95 V | -30°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |
|
|
Winbond Electronics |
IC DRAM 2GBIT HSUL 12 134VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4B
- Memory Size: 2Gbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR2-S4B | 2Gbit | HSUL_12 | 533 MHz | 15ns | - | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
|
|
Renesas Electronics Corporation |
72-MB DDR II+ SRAM (2M X 36-BIT)
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
ATP Electronics, Inc. |
21GB E.MMC 153 BALLS BGA C-TEMP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
GigaDevice Semiconductor (HK) Limited |
LINEAR IC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Microchip Technology |
1MBIT 3.4MHZ I2C SERIAL EEPROM,
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Mbit
- Memory Interface: I2C
- Clock Frequency: 3.4 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 70 ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
EEPROM | EEPROM | 1Mbit | I2C | 3.4 MHz | 5ms | 70 ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Silicon Motion, Inc. |
IC FLASH 160GBIT UFS3.1 153BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 160Gbit
- Memory Interface: UFS3.1
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 153-TFBGA
- Supplier Device Package: 153-BGA (11.5x13)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NAND (SLC) | 160Gbit | UFS3.1 | - | - | - | - | -40°C ~ 105°C | Surface Mount | 153-TFBGA | 153-BGA (11.5x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
4G, 1.2V, DDR4, 512Mx8, 2400MT/s
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gbit
- Memory Interface: POD
- Clock Frequency: 1.2 GHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 19 ns
- Voltage - Supply: 1.14V ~ 1.26V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-TWBGA (10x14)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - DDR4 | 4Gbit | POD | 1.2 GHz | 15ns | 19 ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (10x14) |
|
|
Cypress Semiconductor Corp |
IC SRAM 256KBIT PAR 28TSOP I
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 256Kbit | Parallel | - | 55ns | 55 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
|
|
Microchip Technology |
IC EEPROM 2KBIT I2C TSOT23-5
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kbit
- Memory Interface: I2C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 450 ns
- Voltage - Supply: 1.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSOT-23-5
|
Package: - |
Stock34,695 |
|
EEPROM | EEPROM | 2Kbit | I2C | 1 MHz | 5ms | 450 ns | 1.7V ~ 3.6V | -40°C ~ 85°C (TC) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSOT-23-5 |