|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 125MHZ 54BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 125MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,248 |
|
DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 125MHz | - | 6ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Winbond Electronics |
IC FLASH 128MBIT 104MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 3ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (6x5)
|
Package: 8-WDFN Exposed Pad |
Stock3,280 |
|
FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI | 104MHz | 3ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
|
|
|
Alliance Memory, Inc. |
IC SDRAM 256MBIT 143MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 143MHz
- Write Cycle Time - Word, Page: 14ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock7,280 |
|
DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 143MHz | 14ns | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Cypress Semiconductor Corp |
IC SRAM 72MBIT 450MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II+
- Memory Size: 72Mb (4M x 18)
- Memory Interface: Parallel
- Clock Frequency: 450MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
|
Package: 165-LBGA |
Stock6,448 |
|
SRAM | SRAM - Synchronous, DDR II+ | 72Mb (4M x 18) | Parallel | 450MHz | - | - | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
|
|
|
Micron Technology Inc. |
IC SDRAM 512MBIT 167MHZ 90VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.0ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-VFBGA (9x13)
|
Package: 90-VFBGA |
Stock4,576 |
|
DRAM | SDRAM - Mobile LPDDR | 512Mb (16M x 32) | Parallel | 166MHz | 15ns | 5.0ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (9x13) |
|
|
|
Cypress Semiconductor Corp |
IC SRAM 4MBIT 15NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock3,712 |
|
SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Alliance Memory, Inc. |
IC SRAM 9MBIT 150MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 150MHz
- Write Cycle Time - Word, Page: 6.7ns
- Access Time: 3.8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
|
Package: 100-LQFP |
Stock3,568 |
|
SRAM | SRAM - Synchronous | 9Mb (256K x 36) | Parallel | 150MHz | 6.7ns | 3.8ns | 3.135 V ~ 3.465 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
Micron Technology Inc. |
IC SGRAM 4GBIT 1.75GHZ 170FBGA
- Memory Type: Volatile
- Memory Format: RAM
- Technology: SGRAM - GDDR5
- Memory Size: 4Gb (128M x 32)
- Memory Interface: Parallel
- Clock Frequency: 1.75GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.31 V ~ 1.65 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 170-TFBGA
- Supplier Device Package: 170-FBGA (12x14)
|
Package: 170-TFBGA |
Stock7,920 |
|
RAM | SGRAM - GDDR5 | 4Gb (128M x 32) | Parallel | 1.75GHz | - | - | 1.31 V ~ 1.65 V | 0°C ~ 95°C (TC) | Surface Mount | 170-TFBGA | 170-FBGA (12x14) |
|
|
|
Micron Technology Inc. |
IC SDRAM 256MBIT 167MHZ 54VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 167MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (8x8)
|
Package: 54-VFBGA |
Stock5,952 |
|
DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 167MHz | 12ns | 5.4ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-VFBGA (8x8) |
|
|
|
Alliance Memory, Inc. |
IC SRAM 4MBIT 15NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
|
Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock7,824 |
|
SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 15ns | 15ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
|
|
|
Cypress Semiconductor Corp |
IC SRAM 256KBIT 10NS 28TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.465", 11.80mm Width)
- Supplier Device Package: 28-TSOP I
|
Package: 28-TSSOP (0.465", 11.80mm Width) |
Stock5,520 |
|
SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 10ns | 10ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP I |
|
|
|
Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock23,016 |
|
EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 400kHz | 10ms | 900ns | 2.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
|
Package: 8-WFDFN Exposed Pad |
Stock10,632 |
|
EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 1MHz | 5ms | 400ns | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
|
|
|
Rohm Semiconductor |
IC EEPROM 128KBIT 1MHZ 8SSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 128Kb (16K x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-SSOPB
|
Package: 8-LSSOP (0.173", 4.40mm Width) |
Stock2,816 |
|
EEPROM | EEPROM | 128Kb (16K x 8) | I2C | 1MHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-LSSOP (0.173", 4.40mm Width) | 8-SSOPB |
|
|
|
Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 6ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock129,348 |
|
EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 2MHz | 6ms | - | 2.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
ON Semiconductor |
IC EEPROM 256 SPI 250KHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256b (16 x 16)
- Memory Interface: SPI
- Clock Frequency: 250kHz
- Write Cycle Time - Word, Page: 15ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,080 |
|
EEPROM | EEPROM | 256b (16 x 16) | SPI | 250kHz | 15ms | - | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Cypress Semiconductor Corp |
IC FLASH 1G PARALLEL 63BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-BGA (11x9)
|
Package: 63-VFBGA |
Stock7,072 |
|
FLASH | FLASH - NAND | 1Gb (128M x 8) | Parallel | - | 45ns | 45ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-BGA (11x9) |
|
|
|
Cypress Semiconductor Corp |
IC FLASH 128M PARALLEL 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (13x11)
|
Package: 64-LBGA |
Stock3,504 |
|
FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | - | 60ns | 90ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
|
Cypress Semiconductor Corp |
IC FLASH 128M SPI 108MHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.209", 5.30mm Width) |
Stock4,368 |
|
FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 108MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 60TWBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (10.5x13)
|
Package: 60-TFBGA |
Stock7,392 |
|
DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | 0°C ~ 85°C | Surface Mount | 60-TFBGA | 60-TWBGA (10.5x13) |
|
|
|
Micron Technology Inc. |
IC DRAM 32G 1866MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 1866MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock7,088 |
|
DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
|
|
|
Everspin Technologies Inc. |
MRAM
- Memory Type: Non-Volatile
- Memory Format: RAM
- Technology: MRAM (Magnetoresistive RAM)
- Memory Size: 32Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7 ns
- Voltage - Supply: 1.65V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TBGA (6x8)
|
Package: - |
Request a Quote |
|
RAM | MRAM (Magnetoresistive RAM) | 32Mbit | SPI - Octal I/O | 200 MHz | - | 7 ns | 1.65V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TBGA (6x8) |
|
|
|
Winbond Electronics |
IC DRAM 512MBIT HSUL 12 134VFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2-S4B
- Memory Size: 512Mbit
- Memory Interface: HSUL_12
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR2-S4B | 512Mbit | HSUL_12 | 533 MHz | 15ns | - | 1.14V ~ 1.3V, 1.7V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
|
|
|
GigaDevice Semiconductor (HK) Limited |
IC FLASH 64MBIT SPI/QUAD 8SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O, DTR
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 64Mbit | SPI - Quad I/O, DTR | 200 MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
|
|
|
IBM |
IC SRAM 4MBIT
- Memory Type: -
- Memory Format: SRAM
- Technology: -
- Memory Size: 4Mbit
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
SRAM | - | 4Mbit | - | - | - | - | - | - | Surface Mount | - | - |
|
|
|
ISSI, Integrated Silicon Solution Inc |
4Mb,High-Speed/Low Power,Async,5
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 4Mbit | Parallel | - | 10ns | 10 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
Micron Technology Inc. |
LPDDR5 64GBIT 64 441/441 TFBGA 4
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD WAFER
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 16Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: 50µs, 2.4ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Wafer
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR | 16Mbit | SPI - Quad I/O | 108 MHz | 50µs, 2.4ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | Die | Wafer |
0
Login/Register
BOM
Cart
