|
|
Micron Technology Inc. |
IC PSRAM 16MBIT 70NS 54VFBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 54-VFBGA
- Supplier Device Package: 54-VFBGA (6x8)
|
Package: 54-VFBGA |
Stock4,992 |
|
PSRAM | PSRAM (Pseudo SRAM) | 16Mb (1M x 16) | Parallel | - | 70ns | 70ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | Surface Mount | 54-VFBGA | 54-VFBGA (6x8) |
|
|
Cypress Semiconductor Corp |
IC SRAM 2MBIT 133MHZ 144FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 2Mb (128K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LFBGA
- Supplier Device Package: 144-FBGA (13x13)
|
Package: 144-LFBGA |
Stock5,104 |
|
SRAM | SRAM - Dual Port, Synchronous | 2Mb (128K x 18) | Parallel | 133MHz | - | - | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 144-LFBGA | 144-FBGA (13x13) |
|
|
Micron Technology Inc. |
IC FLASH 8MBIT 70NS 44SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 8Mb (1M x 8, 512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-SOIC (0.525", 13.34mm Width)
- Supplier Device Package: 44-SO
|
Package: 44-SOIC (0.525", 13.34mm Width) |
Stock2,032 |
|
FLASH | FLASH - NOR | 8Mb (1M x 8, 512K x 16) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 44-SOIC (0.525", 13.34mm Width) | 44-SO |
|
|
Micron Technology Inc. |
IC SDRAM 512MBIT 133MHZ 54TSOP
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 512Mb (32M x 16)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
|
Package: 54-TSOP (0.400", 10.16mm Width) |
Stock5,760 |
|
DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 133MHz | 15ns | 5.4ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
Microchip Technology |
IC EEPROM 16KBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 4.5µs
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,264 |
|
EEPROM | EEPROM | 16Kb (2K x 8) | I2C | 400kHz | 5ms | 4.5µs | 2.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC OTP 1MBIT 45NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 45ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
|
Package: 32-LCC (J-Lead) |
Stock108,408 |
|
EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 45ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 150MHZ 119BGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 150MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.8ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
|
Package: 119-BGA |
Stock7,536 |
|
SRAM | SRAM - Synchronous ZBT | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 133MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous ZBT
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.135 V ~ 3.465 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
Package: 100-LQFP |
Stock5,376 |
|
SRAM | SRAM - Synchronous ZBT | 4.5Mb (256K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135 V ~ 3.465 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
Winbond Electronics |
IC SDRAM 1GBIT 200MHZ 90TFBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 1Gb (32M x 32)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)
|
Package: 90-TFBGA |
Stock5,136 |
|
DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 200MHz | 15ns | 5ns | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | Surface Mount | 90-TFBGA | 90-VFBGA (8x13) |
|
|
Microchip Technology |
150NS, SOIC, IND TEMP, GREEN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
|
Package: 28-SOIC (0.295", 7.50mm Width) |
Stock7,632 |
|
EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
Microchip Technology |
IC EEPROM 16KBIT 10MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kb (2K x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock6,468 |
|
EEPROM | EEPROM | 16Kb (2K x 8) | SPI | 10MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Cypress Semiconductor Corp |
IC SRAM 18MBIT 200MHZ 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3ns
- Voltage - Supply: 3.135 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
|
Package: 100-LQFP |
Stock4,368 |
|
SRAM | SRAM - Synchronous | 18Mb (512K x 36) | Parallel | 200MHz | - | 3ns | 3.135 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
Cypress Semiconductor Corp |
IC SRAM 2MBIT 45NS 48VFBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFBGA
- Supplier Device Package: 48-VFBGA (6x8)
|
Package: 48-VFBGA |
Stock16,128 |
|
SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
|
Cypress Semiconductor Corp |
IC SRAM 4MBIT 45NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
|
Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,296 |
|
SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 45ns | 45ns | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
Micron Technology Inc. |
IC FLASH MLC 64G 8GX8
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,616 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 512K PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 512Kb (64K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 9ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
Package: 100-LQFP |
Stock2,640 |
|
SRAM | SRAM - Dual Port, Synchronous | 512Kb (64K x 8) | Parallel | - | - | 9ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
IDT, Integrated Device Technology Inc |
IC SRAM 64K PARALLEL 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 64Kb (8K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
|
Package: 64-LQFP |
Stock5,392 |
|
SRAM | SRAM - Dual Port, Asynchronous | 64Kb (8K x 8) | Parallel | - | 25ns | 25ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
|
|
Micron Technology Inc. |
IC FLASH 2G PARALLEL
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,184 |
|
FLASH | FLASH - NAND | 2Gb (256M x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
|
|
Macronix |
SERIAL NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Quad I/O, QPI, DTR
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 60µs, 750µs
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOP
|
Package: 16-SOIC (0.295", 7.50mm Width) |
Stock2,640 |
|
FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 60µs, 750µs | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOP |
|
|
Infineon Technologies |
PNOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 1Gbit
- Memory Interface: CFI
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 110 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (9x9)
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 1Gbit | CFI | - | 60ns | 110 ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
|
Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
onsemi |
GENERAL SALES (ULP)
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
LPDDR5 64G 1GX64 FBGA Y42M
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR5
- Memory Size: 64Gbit
- Memory Interface: Parallel
- Clock Frequency: 4.266 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.01V ~ 1.12V
- Operating Temperature: -25°C ~ 85°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR5 | 64Gbit | Parallel | 4.266 GHz | - | - | 1.01V ~ 1.12V | -25°C ~ 85°C | - | - | - |
|
|
Renesas Electronics Corporation |
QDR SRAM, 4MX18, 0.45NS
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
SPECIAL/CUSTOM LPDDR4
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
LPDDR4 4G 256MX16 FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 4Gbit
- Memory Interface: Parallel
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V
- Operating Temperature: -40°C ~ 125°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-TFBGA
- Supplier Device Package: 200-TFBGA (10x14.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4X | 4Gbit | Parallel | 2.133 GHz | 18ns | 3.5 ns | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | 200-TFBGA (10x14.5) |
|
|
Rohm Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kbit
- Memory Interface: I2C
- Clock Frequency: 1 MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.6V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock6,777 |
|
EEPROM | EEPROM | 64Kbit | I2C | 1 MHz | 5ms | - | 1.6V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
|
|
Cypress Semiconductor Corp |
IC SRAM 1MBIT PARALLEL 32TSOP II
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 15ns
- Access Time: 15 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package: 32-TSOP II
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 1Mbit | Parallel | - | 15ns | 15 ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 32-SOIC (0.400", 10.16mm Width) | 32-TSOP II |