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Cypress Semiconductor Corp |
IC FLASH 2GBIT 120NS 64BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 2Gb (256M x 8, 128M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 120ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LBGA
- Supplier Device Package: 64-FBGA (11x13)
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Package: 64-LBGA |
Stock6,304 |
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FLASH | FLASH - NOR | 2Gb (256M x 8, 128M x 16) | Parallel | - | - | 120ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
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Micron Technology Inc. |
IC FLASH 128MBIT 108MHZ 16SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (32M x 4)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SO W
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock6,608 |
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FLASH | FLASH - NOR | 128Mb (32M x 4) | SPI | 108MHz | 8ms, 5ms | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO W |
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Cypress Semiconductor Corp |
IC NVSRAM 4MBIT 20NS 44TSOP
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock6,768 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (512K x 8) | Parallel | - | 20ns | 20ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 20NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 20ns
- Access Time: 20ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,776 |
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SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 20ns | 20ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
IC NVSRAM 256KBIT 45NS 32SOIC
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 32-SOIC
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Package: 32-SOIC (0.295", 7.50mm Width) |
Stock6,160 |
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NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 32-SOIC (0.295", 7.50mm Width) | 32-SOIC |
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Micron Technology Inc. |
IC FLASH 4MBIT 80NS 44SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 4Mb (512K x 8, 256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 80ns
- Access Time: 80ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-SOIC (0.496", 12.60mm Width)
- Supplier Device Package: 44-SOP
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Package: 44-SOIC (0.496", 12.60mm Width) |
Stock5,616 |
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FLASH | FLASH - NOR | 4Mb (512K x 8, 256K x 16) | Parallel | - | 80ns | 80ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | 44-SOP |
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Microchip Technology |
IC EEPROM 1KBIT 2MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8, 64 x 16)
- Memory Interface: SPI
- Clock Frequency: 2MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock2,768 |
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EEPROM | EEPROM | 1Kb (128 x 8, 64 x 16) | SPI | 2MHz | 10ms | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 35NS 108PGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Quad Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 108-BPGA
- Supplier Device Package: 108-PGA (30.48x30.48)
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Package: 108-BPGA |
Stock6,784 |
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SRAM | SRAM - Quad Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 108-BPGA | 108-PGA (30.48x30.48) |
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Renesas Electronics America |
IC SRAM 32MBIT 70NS 52TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 32Mb (4M x 8, 2M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-TFSOP (0.350", 8.89mm Width)
- Supplier Device Package: 52-TSOP II
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Package: 52-TFSOP (0.350", 8.89mm Width) |
Stock2,128 |
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SRAM | SRAM | 32Mb (4M x 8, 2M x 16) | Parallel | - | 70ns | 70ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 52-TFSOP (0.350", 8.89mm Width) | 52-TSOP II |
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IDT, Integrated Device Technology Inc |
IC SRAM 288KBIT 7.5NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 288Kb (16K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 7.5ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock7,792 |
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SRAM | SRAM - Dual Port, Synchronous | 288Kb (16K x 18) | Parallel | - | - | 7.5ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 8KBIT 25NS 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 8Kb (1K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock5,488 |
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SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Microchip Technology |
IC EEPROM 512KBIT 20MHZ 8SOIJ
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 512Kb (64K x 8)
- Memory Interface: SPI
- Clock Frequency: 20MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIJ
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock7,888 |
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EEPROM | EEPROM | 512Kb (64K x 8) | SPI | 20MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Microchip Technology |
IC FLASH 1MBIT 33MHZ 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 1Mb (128K x 8)
- Memory Interface: SPI
- Clock Frequency: 33MHz
- Write Cycle Time - Word, Page: 20µs
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON
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Package: 8-WDFN Exposed Pad |
Stock23,280 |
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FLASH | FLASH | 1Mb (128K x 8) | SPI | 33MHz | 20µs | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON |
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Microchip Technology |
IC EEPROM 1KBIT 400KHZ 8TDFN
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 400ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-TDFN (2x3)
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Package: 8-WFDFN Exposed Pad |
Stock3,392 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 1MHz | 5ms | 400ns | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
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Cypress Semiconductor Corp |
IC SRAM 18MBIT 300MHZ 165FBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 300MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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Package: 165-LBGA |
Stock15,480 |
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SRAM | SRAM - Synchronous, QDR II | 18Mb (1M x 18) | Parallel | 300MHz | - | - | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Rohm Semiconductor |
IC EEPROM 32KBIT 5MHZ 8SOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock20,832 |
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EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 5MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
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Cypress Semiconductor Corp |
IC FRAM 1MBIT 3.4MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 1Mb (128K x 8)
- Memory Interface: I2C
- Clock Frequency: 3.4MHz
- Write Cycle Time - Word, Page: -
- Access Time: 130ns
- Voltage - Supply: 2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock51,978 |
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FRAM | FRAM (Ferroelectric RAM) | 1Mb (128K x 8) | I2C | 3.4MHz | - | 130ns | 2 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC EEPROM 256 SPI 1MHZ 8DIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256b (16 x 16)
- Memory Interface: SPI
- Clock Frequency: 1MHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock3,664 |
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EEPROM | EEPROM | 256b (16 x 16) | SPI | 1MHz | 10ms | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Viking Technology |
IC DRAM 4G PARALLEL 1.2GHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: 1.2GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,272 |
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DRAM | SDRAM - DDR4 | 4Gb (512M x 8) | Parallel | 1.2GHz | - | - | 1.2V | - | - | - | - |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 150ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TC)
- Mounting Type: Through Hole
- Package / Case: 28-CDIP (0.600", 15.24mm)
- Supplier Device Package: 28-CDIP
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Package: 28-CDIP (0.600", 15.24mm) |
Stock5,808 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |
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Macronix |
IC FLASH 256MBIT
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 256Mb (32M x 8)
- Memory Interface: SPI
- Clock Frequency: 120MHz
- Write Cycle Time - Word, Page: 30µs, 750µs
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock48,000 |
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FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI | 120MHz | 30µs, 750µs | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOP |
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Rohm Semiconductor |
I2C BUS 4KBIT(512X8BIT) EEPROM
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 4Kb (512 x 8)
- Memory Interface: I²C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock8,880 |
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EEPROM | EEPROM | 4Kb (512 x 8) | I²C | 400kHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
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IDT, Integrated Device Technology Inc |
IC SRAM 16K PARALLEL 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock6,704 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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Micron Technology Inc. |
IC DRAM 4G PARALLEL 1.33GHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1.33GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock5,392 |
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DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.33GHz | - | - | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | - |
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GigaDevice Semiconductor (HK) Limited |
IC FLASH 8MBIT SPI/QUAD 8SOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 8Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 120µs, 4ms
- Access Time: 12 ns
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Request a Quote |
|
FLASH | FLASH - NOR (SLC) | 8Mbit | SPI - Quad I/O | 104 MHz | 120µs, 4ms | 12 ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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IBM |
IC SRAM 8MBIT HSTL 153PBGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 8Mbit
- Memory Interface: HSTL
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 1.8 ns
- Voltage - Supply: 2.375V ~ 2.625V
- Operating Temperature: 0°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-BBGA
- Supplier Device Package: 153-PBGA (14x22)
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Synchronous | 8Mbit | HSTL | - | - | 1.8 ns | 2.375V ~ 2.625V | 0°C ~ 85°C (TA) | Surface Mount | 153-BBGA | 153-PBGA (14x22) |
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Winbond Electronics |
1GB LPDDR4, X16, 1866MHZ, -40C~1
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 1Gbit
- Memory Interface: LVSTL_11
- Clock Frequency: 1.867 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.6 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 100-VFBGA
- Supplier Device Package: 100-VFBGA (10x7.5)
|
Package: - |
Request a Quote |
|
DRAM | SDRAM - Mobile LPDDR4 | 1Gbit | LVSTL_11 | 1.867 GHz | 18ns | 3.6 ns | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 105°C (TC) | Surface Mount | 100-VFBGA | 100-VFBGA (10x7.5) |
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onsemi |
CAT25080 - 8-KBIT SPI SERIAL EEP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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