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ISSI, Integrated Silicon Solution Inc |
IC PSRAM 8MBIT 70NS 44TSOP
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 8Mb (512K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: 2.5 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,456 |
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PSRAM | PSRAM (Pseudo SRAM) | 8Mb (512K x 16) | Parallel | - | 70ns | 70ns | 2.5 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 256MBIT 166MHZ 60BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 256Mb (16M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x10)
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Package: 60-TFBGA |
Stock3,728 |
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DRAM | SDRAM - Mobile DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
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Micron Technology Inc. |
IC SDRAM 1GBIT 400MHZ 84FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 400MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400ps
- Voltage - Supply: 1.7 V ~ 1.9 V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 84-TFBGA
- Supplier Device Package: 84-FBGA (8x12.5)
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Package: 84-TFBGA |
Stock5,936 |
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DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TC) | Surface Mount | 84-TFBGA | 84-FBGA (8x12.5) |
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Micron Technology Inc. |
IC FLASH 128MBIT 108MHZ 16SO
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI
- Clock Frequency: 108MHz
- Write Cycle Time - Word, Page: 8ms, 5ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SO W
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Package: 16-SOIC (0.295", 7.50mm Width) |
Stock5,792 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI | 108MHz | 8ms, 5ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO W |
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Microchip Technology |
IC OTP 256KBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock5,856 |
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EPROM | EPROM - OTP | 256Kb (32K x 8) | Parallel | - | - | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Microchip Technology |
IC EEPROM 32KBIT 3MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 32Kb (4K x 8)
- Memory Interface: SPI
- Clock Frequency: 3MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,276 |
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EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 3MHz | 5ms | - | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 64KBIT 400KHZ 8SO
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 900ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock4,016 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 10ms | 900ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 32KBIT 55NS SB48
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 32Kb (4K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 48-DIP (0.600", 15.24mm)
- Supplier Device Package: 48-SIDE BRAZED
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Package: 48-DIP (0.600", 15.24mm) |
Stock3,344 |
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SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | Through Hole | 48-DIP (0.600", 15.24mm) | 48-SIDE BRAZED |
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IDT, Integrated Device Technology Inc |
IC SRAM 128KBIT 35NS 84PGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (8K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 84-BPGA
- Supplier Device Package: 84-PGA (27.94x27.94)
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Package: 84-BPGA |
Stock6,512 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (8K x 16) | Parallel | - | 35ns | 35ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Through Hole | 84-BPGA | 84-PGA (27.94x27.94) |
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IDT, Integrated Device Technology Inc |
IC SRAM 144KBIT 25NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 144Kb (8K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock2,752 |
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SRAM | SRAM - Dual Port, Asynchronous | 144Kb (8K x 18) | Parallel | - | 25ns | 25ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 12NS 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 256Kb (16K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 12ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock4,336 |
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SRAM | SRAM - Dual Port, Synchronous | 256Kb (16K x 16) | Parallel | - | - | 12ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Macronix |
IC FLASH 1GBIT 110NS 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 110ns
- Access Time: 110ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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Package: 56-TFSOP (0.724", 18.40mm Width) |
Stock4,096 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | Parallel | - | 110ns | 110ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC SDRAM 128MBIT 166MHZ 90BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile DDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5ns
- Voltage - Supply: 1.7 V ~ 1.95 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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Package: 90-TFBGA |
Stock7,184 |
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DRAM | SDRAM - Mobile DDR | 128Mb (4M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Microchip Technology |
IC EEPROM 1KBIT 5MHZ M2P
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kb (128 x 8)
- Memory Interface: I2C
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 35µs
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Surface Mount
- Package / Case: M2 P, Smart Card Module (TWI)
- Supplier Device Package: M2 - P Module (TWI)
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Package: M2 P, Smart Card Module (TWI) |
Stock7,632 |
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EEPROM | EEPROM | 1Kb (128 x 8) | I2C | 5MHz | 5ms | 35µs | 2.7 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | M2 P, Smart Card Module (TWI) | M2 - P Module (TWI) |
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Microchip Technology |
IC EEPROM 64KBIT 400KHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 64Kb (8K x 8)
- Memory Interface: I2C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 2.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock20,904 |
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EEPROM | EEPROM | 64Kb (8K x 8) | I2C | 400kHz | 5ms | 900ns | 2.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Micron Technology Inc. |
IC FLASH 1G SPI SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gb (1G x 1)
- Memory Interface: SPI
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,552 |
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FLASH | FLASH - NAND | 1Gb (1G x 1) | SPI | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | - | - | - |
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Micron Technology Inc. |
IC FLASH 64G MMC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 64Gb (8G x 8)
- Memory Interface: MMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,888 |
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FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | - | -40°C ~ 105°C (TA) | - | - | - |
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Micron Technology Inc. |
LPDDR4 32G 1GX32 FBGA QDP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,632 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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IDT, Integrated Device Technology Inc |
IC SRAM 16K PARALLEL 52PLCC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 16Kb (2K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 52-LCC (J-Lead)
- Supplier Device Package: 52-PLCC (19.13x19.13)
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Package: 52-LCC (J-Lead) |
Stock5,040 |
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SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
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IDT, Integrated Device Technology Inc |
IC SRAM 128K PARALLEL 64TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 128Kb (16K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (14x14)
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Package: 64-LQFP |
Stock7,296 |
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SRAM | SRAM - Dual Port, Asynchronous | 128Kb (16K x 8) | Parallel | - | 45ns | 45ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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IDT, Integrated Device Technology Inc |
IC SRAM 512K PARALLEL 100TQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 512Kb (32K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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Package: 100-LQFP |
Stock3,728 |
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SRAM | SRAM - Dual Port, Asynchronous | 512Kb (32K x 16) | Parallel | - | 35ns | 35ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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Micron Technology Inc. |
IC DRAM 16G PARALLEL 1.2GHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR4
- Memory Size: 16Gb (2G x 8)
- Memory Interface: Parallel
- Clock Frequency: 1.2GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14 V ~ 1.26 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,976 |
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DRAM | SDRAM - DDR4 | 16Gb (2G x 8) | Parallel | 1.2GHz | - | - | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - |
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Micron Technology Inc. |
IC FLASH 128M SPI 133MHZ 8WPDFN
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mb (16M x 8)
- Memory Interface: SPI
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: 8ms, 2.8ms
- Access Time: -
- Voltage - Supply: 1.7 V ~ 2 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WPDFN (6x5)(MLP8)
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Package: 8-WDFN Exposed Pad |
Stock2,928 |
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FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WPDFN (6x5)(MLP8) |
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Infineon Technologies |
IC PSRAM 128MBIT SPI/OCTL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 128Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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Package: - |
Request a Quote |
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PSRAM | PSRAM (Pseudo SRAM) | 128Mbit | SPI - Octal I/O | 200 MHz | 35ns | 35 ns | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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onsemi |
1KB SPI SER CMOS EEPROM -LOW VCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 1Kbit
- Memory Interface: SPI
- Clock Frequency: 20 MHz
- Write Cycle Time - Word, Page: 4ms
- Access Time: 20 ns
- Voltage - Supply: 1.7V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
|
EEPROM | EEPROM | 1Kbit | SPI | 20 MHz | 4ms | 20 ns | 1.7V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Cypress Semiconductor Corp |
IC SRAM 2MBIT PARALLEL 32TSOP II
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package: 32-TSOP II
|
Package: - |
Request a Quote |
|
SRAM | SRAM - Asynchronous | 2Mbit | Parallel | - | 10ns | 10 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.400", 10.16mm Width) | 32-TSOP II |
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Fairchild Semiconductor |
IC EEPROM 16KBIT I2C 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 16Kbit
- Memory Interface: I2C
- Clock Frequency: 100 kHz
- Write Cycle Time - Word, Page: 10ms
- Access Time: 3.5 µs
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
EEPROM | EEPROM | 16Kbit | I2C | 100 kHz | 10ms | 3.5 µs | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Silicon Motion, Inc. |
IC FLASH 4TBIT EMMC 153BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (TLC)
- Memory Size: 4Tbit
- Memory Interface: eMMC
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 153-TBGA
- Supplier Device Package: 153-BGA (11.5x13)
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Package: - |
Request a Quote |
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FLASH | FLASH - NAND (TLC) | 4Tbit | eMMC | - | - | - | - | -40°C ~ 85°C | Surface Mount | 153-TBGA | 153-BGA (11.5x13) |