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Micron Technology Inc. |
IC SDRAM 4GBIT 1067MHZ 96BGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gb (256M x 16)
- Memory Interface: Parallel
- Clock Frequency: 1066MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20ns
- Voltage - Supply: 1.425 V ~ 1.575 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (9x14)
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Package: 96-TFBGA |
Stock7,056 |
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DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 1066MHz | - | 20ns | 1.425 V ~ 1.575 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x14) |
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Microchip Technology |
IC FLASH 16MBIT 80MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 16Mb (2M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 80MHz
- Write Cycle Time - Word, Page: 1.5ms
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.209", 5.30mm Width) |
Stock7,088 |
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FLASH | FLASH | 16Mb (2M x 8) | SPI - Quad I/O | 80MHz | 1.5ms | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
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IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock5,280 |
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SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Cypress Semiconductor Corp |
IC SRAM 1MBIT 12NS 44SOJ
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Mb (64K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
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Package: 44-BSOJ (0.400", 10.16mm Width) |
Stock5,328 |
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SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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Sharp Microelectronics |
IC FLASH 64MBIT 70NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - Boot Block
- Memory Size: 64Mb (4M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70ns
- Voltage - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.488", 12.40mm Width)
- Supplier Device Package: 48-TSOP
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Package: 48-TFSOP (0.488", 12.40mm Width) |
Stock4,128 |
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FLASH | FLASH - Boot Block | 64Mb (4M x 16) | Parallel | - | 70ns | 70ns | - | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.488", 12.40mm Width) | 48-TSOP |
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Microchip Technology |
IC EEPROM 256KBIT 90NS 32PLCC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ms
- Access Time: 90ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 32-LCC (J-Lead)
- Supplier Device Package: 32-PLCC
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Package: 32-LCC (J-Lead) |
Stock6,576 |
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EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC |
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Microchip Technology |
IC FLASH 2MBIT 120NS 32DIP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 2Mb (256K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 50µs
- Access Time: 120ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Through Hole
- Package / Case: 32-DIP (0.600", 15.24mm)
- Supplier Device Package: 32-DIP
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Package: 32-DIP (0.600", 15.24mm) |
Stock6,640 |
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FLASH | FLASH | 2Mb (256K x 8) | Parallel | - | 50µs | 120ns | 3 V ~ 3.6 V | 0°C ~ 70°C (TC) | Through Hole | 32-DIP (0.600", 15.24mm) | 32-DIP |
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Microchip Technology |
IC OTP 1MBIT 55NS 32DIP
- Memory Type: Non-Volatile
- Memory Format: EPROM
- Technology: EPROM - OTP
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: 55ns
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: 0°C ~ 70°C (TC)
- Mounting Type: Through Hole
- Package / Case: 32-DIP (0.600", 15.24mm)
- Supplier Device Package: 32-DIP
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Package: 32-DIP (0.600", 15.24mm) |
Stock5,456 |
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EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 55ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Through Hole | 32-DIP (0.600", 15.24mm) | 32-DIP |
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IDT, Integrated Device Technology Inc |
IC SRAM 4.5MBIT 12NS 256CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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Package: 256-LBGA |
Stock3,552 |
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SRAM | SRAM - Dual Port, Asynchronous | 4.5Mb (128K x 36) | Parallel | - | 12ns | 12ns | 3.15 V ~ 3.45 V | -40°C ~ 85°C (TA) | Surface Mount | 256-LBGA | 256-CABGA (17x17) |
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IDT, Integrated Device Technology Inc |
IC SRAM 9MBIT 133MHZ 208CABGA
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2ns
- Voltage - Supply: 3.15 V ~ 3.45 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 208-LFBGA
- Supplier Device Package: 208-CABGA (15x15)
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Package: 208-LFBGA |
Stock7,376 |
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SRAM | SRAM - Dual Port, Synchronous | 9Mb (256K x 36) | Parallel | 133MHz | - | 4.2ns | 3.15 V ~ 3.45 V | 0°C ~ 70°C (TA) | Surface Mount | 208-LFBGA | 208-CABGA (15x15) |
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Micron Technology Inc. |
IC SDRAM 32GBIT 933MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR3
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 933MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.2V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,368 |
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DRAM | SDRAM - Mobile LPDDR3 | 32Gb (512M x 64) | - | 933MHz | - | - | 1.2V | -30°C ~ 85°C (TC) | - | - | - |
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Cypress Semiconductor Corp |
NOR
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 130ns
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,696 |
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FLASH | FLASH - NOR | 1Gb (128M x 8) | Parallel | - | 60ns | 130ns | 1.65 V ~ 3.6 V | -40°C ~ 125°C (TA) | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 2MBIT 10NS 44TSOP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 2Mb (128K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10ns
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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Package: 44-TSOP (0.400", 10.16mm Width) |
Stock4,400 |
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SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Microchip Technology |
IC EEPROM 2KBIT 10MHZ 8SOIC
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 2Kb (256 x 8)
- Memory Interface: SPI
- Clock Frequency: 10MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 1.8 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock13,044 |
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EEPROM | EEPROM | 2Kb (256 x 8) | SPI | 10MHz | 5ms | - | 1.8 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC EEPROM 512K I2C 400KHZ WAFER
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 512Kb (64K x 8)
- Memory Interface: I²C
- Clock Frequency: 400kHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: 900ns
- Voltage - Supply: 1.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock7,088 |
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EEPROM | EEPROM | 512Kb (64K x 8) | I²C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Die |
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Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 96FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 1Gb (64M x 16)
- Memory Interface: Parallel
- Clock Frequency: 800MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20ns
- Voltage - Supply: 1.283 V ~ 1.45 V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-FBGA (13x9)
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Package: 96-TFBGA |
Stock3,008 |
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DRAM | SDRAM - DDR3L | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (13x9) |
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Micron Technology Inc. |
IC DRAM 16G 2133MHZ FBGA
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 16Gb (256M x 64)
- Memory Interface: -
- Clock Frequency: 2133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 105°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,288 |
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DRAM | SDRAM - Mobile LPDDR4 | 16Gb (256M x 64) | - | 2133MHz | - | - | 1.1V | -30°C ~ 105°C (TC) | - | - | - |
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Winbond Electronics |
IC SDRAM 1GBIT 78BGA
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock5,984 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
SPI FLASH NOR SLC 32MX8 TBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 256Mb (32M x 8)
- Memory Interface: Xccela Bus
- Clock Frequency: 133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-TPBGA
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Package: 24-TBGA |
Stock3,872 |
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FLASH | FLASH | 256Mb (32M x 8) | Xccela Bus | 133MHz | - | - | 2.7 V ~ 3.6 V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TPBGA |
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Cypress Semiconductor Corp |
IC SRAM SYNC 100TQFP
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock7,744 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micron Technology Inc. |
IC DRAM 32G 2133MHZ
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 2133MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,616 |
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DRAM | SDRAM - Mobile LPDDR4 | 32Gb (512M x 64) | - | 2133MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
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Microchip Technology |
16MB SQI FLASH MEMORY
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH
- Memory Size: 16Mb (2M x 8)
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104MHz
- Write Cycle Time - Word, Page: 1.5ms
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WDFN (5x6)
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Package: 8-WDFN Exposed Pad |
Stock2,544 |
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FLASH | FLASH | 16Mb (2M x 8) | SPI - Quad I/O | 104MHz | 1.5ms | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WDFN (5x6) |
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Microchip Technology |
APG STANDARD
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM
- Memory Size: 256Kb (32K x 8)
- Memory Interface: SPI
- Clock Frequency: 5MHz
- Write Cycle Time - Word, Page: 5ms
- Access Time: -
- Voltage - Supply: 2.5V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,504 |
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EEPROM | EEPROM | 256Kb (32K x 8) | SPI | 5MHz | 5ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128MBIT PAR 54TSOP II
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mbit
- Memory Interface: LVTTL
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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Package: - |
Request a Quote |
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DRAM | SDRAM | 128Mbit | LVTTL | 166 MHz | - | 5.4 ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Cypress Semiconductor Corp |
SRAM - ASYNCHRONOUS MEMORY IC 2M
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous
- Memory Size: 2Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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SRAM | SRAM - Synchronous | 2Mbit | Parallel | - | 45ns | 45 ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | - | - | - |
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Winbond Electronics |
IC FLASH 1GBIT SPI/QUAD 8WSON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 1Gbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 104 MHz
- Write Cycle Time - Word, Page: 700µs
- Access Time: 7 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-WSON (8x6)
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Package: - |
Stock4,602 |
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FLASH | FLASH - NAND (SLC) | 1Gbit | SPI - Quad I/O | 104 MHz | 700µs | 7 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (8x6) |
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ISSI, Integrated Silicon Solution Inc |
Automotive (Tc: -40 to +95C), 1G
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 1Gbit
- Memory Interface: SSTL_15
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: -40°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 96-TFBGA
- Supplier Device Package: 96-TWBGA (9x13)
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Package: - |
Request a Quote |
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DRAM | SDRAM - DDR3 | 1Gbit | SSTL_15 | 800 MHz | 15ns | 20 ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |